Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.

On The Sub-Nm Eot Scaling Of High-Kappa Gate Stacks

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Modeling of direct tunneling current through interfacial oxide and high-K gate stacks

Electrical Performance Improvement In Sio2/Hfsio High-K Gate Stack For Advanced Low Power Device Application

Advanced CMOS Gate Stack: Present Research Progress

Impact of GeOx Interfacial Layer Thickness on Al2O3/Ge MOS Interface Properties

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Simulation and Analysis of Gate Stack DG MOSFET with Application of High-k Dielectric Using Visual TCAD

Monte Carlo study of coupled SO phonon-plasmon scattering in Si MOSFETs with high k dielectric gate stacks: hot electron and disorder effects

Design Considerations of High-Κ Gate Dielectrics for Sub-0.1-μm MOSFET's

Si–SiO2 Interface Band‐gap Transition – Effects on MOS Inversion Layer

Integrations and Challenges of Novel High-K Gate Stacks in Advanced CMOS Technology

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

First principles computational studies of high-k dielectric stacks for next generation transistors

Gate current modeling of high-k stack nanoscale MOSFETs

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks