Silicon High-Speed BPSK Modulator: Design and Optimization

Jinting Wang,Linjie Zhou,Haike Zhu,Qianqian Wu,Rui Yang,Lei Liu,Tao Wang,Jianping Chen

DOI: https://doi.org/10.1364/ACPC.2014.AF1A.1

2014-01-01

Abstract:We report 20 Gb/s binary phase shift keying (BPSK) modulation in a silicon Mach-Zehnder modulator integrated with a single-drive push-pull electrode. The device is optimized using a distributed circuit model.

What problem does this paper attempt to address?

Silicon high-speed binary phase-shift keying modulator with a single-drive push–pull high-speed traveling wave electrode

jinting wang,linjie zhou,haike zhu,rui yang,yanyang zhou,lei liu,tao wang,jianping chen

DOI: https://doi.org/10.1364/PRJ.3.000058

IF: 7.6

2015-01-01

Photonics Research

Abstract:We demonstrate binary phase shift keying (BPSK) modulation using a silicon Mach-Zehnder modulator with a pi-phase-shift voltage (V-pi) of -4.5 V. The single-drive push-pull traveling wave electrode has been optimized using numerical simulations with a 3 dB electro-optic bandwidth of 35 GHz. The 32 Gb/s BPSK constellation diagram is measured with an error vector magnitude of 18.9%. (C) 2015 Chinese Laser Press
Optimized Silicon Mzi Modulators for 50 Gbit/S Ook and 40 Gbit/S Bpsk Modulation

Yanyang Zhou,Linjie Zhou,Haike Zhu,Jingting Wang,Feiran Su,Zhiren Wang,Lei Liu,Tao Wang,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1109/oecc.2015.7340098

2015-01-01

Abstract:We report 50Gb/s On-Off keying (OOK) and 40Gb/s binary phase shift keying (BPSK) modulation in a single-drive push-pull silicon Mach-Zehnder modulator with optimized segmented electrode design. The measured modulation efficiency (Vπ·Lπ) is ~1.77 V·cm at 4.0 V reverse bias and the electro-optic (EO) 3-dB bandwidth exceeds 30 GHz at 6.0 V reverse bias.
Single-drive Push-Pull Silicon Mach-Zehnder Modulator for OOK and BPSK Modulation

Haike Zhu,Linjie Zhou,Lei Liu,Tao Wang,Yanyang Zhou,Jinting Wang,Qianqian Wu,Anbang Xie,Rui Yang,Zuxiang Li,Xinwan Li,Jianping Chen

2014-01-01

Abstract:We demonstrate a single-drive high-speed silicon Mach-Zehnder modulator with the V-pi.L of 1.35 V.cm. 20 Gb/s on-off keying (OOK) and 15 Gb/s binary phase shift keying (BPSK) modulations are achieved.
50 Gb/s Silicon QPSK Modulator with Single-Drive Push-Pull Traveling Wave Electrodes Design

Haike Zhu,Linjie Zhou,Tao Wang,Lei Liu,Yanyang Zhou,Jinting Wang,Qianqian Wu,Anbang Xie,Rui Yang,Zuxiang Li,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1364/acpc.2014.af1a.2

2014-01-01

Abstract:We demonstrate a silicon QPSK modulator consisting of two nested Mach-Zehnder interferometers with 3.5 mm long traveling-wave electrodes. 50 Gb/s QPSK modulation is achieved with power consumption of 9.3 pJ/bit.
64 Gb/s silicon QPSK modulator with single-drive push-pull traveling wave electrodes

Haike Zhu,Linjie Zhou,Tao Wang,Lei Liu,Chi Yan Wong,Yanyang Zhou,Jinting Wang,Qianqian Wu,Anbang Xie,Rui Yang,Zuxiang Li,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1364/cleo_si.2015.sw3n.7

2015-01-01

Abstract:We demonstrate a silicon QPSK modulator consisting of two nested Mach-Zehnder interferometers with 3.5 mm long traveling-wave electrodes. 64 Gb/s QPSK modulation is achieved with an EVM of 24.4% and power consumption of 7.1 pJ/bit.
Simulation and Experimental Results of Single Drive Silicon Mach-Zehnder Modulator

Haowen Shu,Junlong Zhang,Xingjun Wang,Tiantian Li,Zhiping Zhou

DOI: https://doi.org/10.1364/acpc.2016.af2a.56

2016-01-01

Abstract:After optimizing the electrode structure, 15 Gb/s BPSK modulation was presented employing a 3mm single drive silicon Mach-Zehnder modulator under 3.5v driving voltage.
High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Oskars Ozolins,Armands Ostrovskis,Michael Koenigsmann,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Ryan P. Scott,Hansjoerg Haisch,Hadrien Louchet,Aleksandrs Marinins,Sandis Spolitis,Jurgis Porins,Lu Zhang,Richard Schatz,Xianbin Yu,Vjaceslavs Bobrovs,Markus Gruen,Xiaodan Pang

DOI: https://doi.org/10.1109/icton59386.2023.10207236

2023-01-01

Abstract:Silicon photonics (SiP) is a key enabling technology for high-baudrate communication. It is a key technology for future 800 Gbps and 1.6 Tbps solutions to meet the ever-increasing demands. The 800G pluggable multi-source agreement (MSA) suggests that intensity-modulated direct-detection (IM/DD) is the most sustainable way forward [1]. The high operational bandwidth of each transceiver component is essential. An ultra-compact SiP slow light modulator with record-high bandwidth of 110 GHz shows the potential [2]. Therefore, both multilevel pulse amplitude modulation (PAM) and on-off keying (OOK) should be considered. SiP offers excellent production yield and has a substantial role in optical interconnects. SiP ring resonator modulators (RRM) have unique advantages like a small footprint, simple driver configuration, low power consumption, and suitability for multichannel applications. On the other hand, the SiP Mach-Zehnder modulator (MZM) offers differential drive benefits.
Low-voltage, high speed, compact silicon modulator for BPSK modulation.

Tiantian Li,Junlong Zhang,Huaxiang Yi,Wei Tan,Qifeng Long,Zhiping Zhou,Xingjun Wang,Hequan Wu

DOI: https://doi.org/10.1364/OE.21.023410

IF: 3.8

2013-01-01

Optics Express

Abstract:A low voltage, high speed, compact silicon Mach-Zehnder Interferometer (MZI) modulator for Binary Phase Shift Keying (BPSK) modulation has been demonstrated. High modulation efficiency, V pi L pi equals to 0.45V.cm, was obtained in a 1mm length device owing to a higher doping concentration and low-loss traveling-wave electrode. 25Gb/s non-return-to-zero(NRZ)-BPSK with 6V(pp) RF driving signal was achieved. Driven by a very low 3V(pp) RF signal, the 10Gb/s NRZ-BPSK was also realized benefiting from the high modulation efficiency and the low-voltage driving scheme. The power consumption for the BPSK modulation was as low as 0.118W. These results prove that the silicon modulator is suitable for advanced communication system with low power consumption. (C) 2013 Optical Society of America
High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.21.004116

IF: 3.8

2013-01-01

Optics Express

Abstract:We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a V pi L pi < 2 V.cm were achieved in an MZM with a 750 mu m-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB. (C)2013 Optical Society of America
High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

Hao Xu,Xi Xiao,Xianyao Li,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015093

IF: 3.8

2012-01-01

Optics Express

Abstract:A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V pi L pi = 1.5 similar to 2.0 V.cm and low doping-induced loss of similar to 10 dB/cm by applying a relatively low doping concentration of 2 x 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 mu m. (c) 2012 Optical Society of America
Optimized Silicon Qpsk Modulator with 64-Gb/s Modulation Speed

Haike Zhu,Linjie Zhou,Tao Wang,Lei Liu,Chiyan Wong,Yanyang Zhou,Rui Yang,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1109/jphot.2015.2425875

IF: 2.4

2015-01-01

IEEE Photonics Journal

Abstract:We demonstrate a compact silicon quadrature phase-shift keying (QPSK) modulator consisting of two nested Mach-Zehnder interferometers with a size of 4.5-mm(2). The V-II.L of the modulator is 1.4 V . cm with an insertion loss of 8 dB. In addition, 64-Gb/s QPSK modulation is achieved with an error vector magnitude (EVM) of 24.4% and bit error rate (BER) of 2.1 x 10(-5) at the received optical power of -10 dBm after the device and an EVM of 31.7% and BER of 8.4 x 10(-4) at the received optical power of 0 dBm after 10-km single-mode fiber transmission. The estimated power consumption is 7.1 pJ/bit for the 64-Gb/s QPSK modulation.
High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

Hao Xu,Xi Xiao,Xianyao Li,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/acpc.2012.as3b.3

2012-01-01

Abstract:We report a 40 Gbit/s traveling-wave silicon Mach-Zehnder modulator fabricated in a commercial 0.18 μm CMOS process. A distributed circuit model is proposed to characterize the bandwidth performance of this modulator.
60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
Modeling and optimization of a single-drive push–pull silicon Mach–Zehnder modulator

Yanyang Zhou,Linjie Zhou,Haike Zhu,Chiyan Wong,Yida Wen,Lei Liu,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1364/PRJ.4.000153

IF: 7.6

2016-01-01

Photonics Research

Abstract:We present an equivalent circuit model for a silicon carrier-depletion single-drive push-pull Mach-Zehnder modulator (MZM) with its traveling wave electrode made of coplanar strip lines. In particular, the partial-capacitance technique and conformal mapping are used to derive the capacitance associated with each layer. The PN junction is accurately modeled with the fringe capacitances taken into consideration. The circuit model is validated by comparing the calculations with the simulation results. Using this model, we analyze the effect of several key parameters on the modulator performance to optimize the design. Experimental results of MZMs confirm the theoretical analysis. A 56 Gb/s on-off keying modulation and a 40 Gb/s binary phase-shift keying modulation are achieved using the optimized modulator. (C) 2016 Chinese Laser Press
10-Gb/s 53.1-Km BPSK Transmission of Silicon Mach-Zehnder Modulator

Tiantian Li,Junlong Zhang,Huaxiang Yi,Wei Tan,Qifeng Long,Zhiping Zhou,Xingjun Wang,Hequan Wu

DOI: https://doi.org/10.1364/acpc.2013.aw4a.3

2013-01-01

Abstract:25Gb/s BPSK modulation was presented employing 2mm Si Mach-Zehnder (MZ) modulator, by which the BPSK transmission was demonstrated through 53.1-km Single Mode Fiber (SMF) in 10 Gb/s under 6Vpp driving voltage.
Design and Electro-Optical Co-Optimization of High-Speed Travelling Wave Silicon-Organic Hybrid Modulators

Shuojian Zhang,Yimin Xia,Jialin Cheng,Jian‐Jun He

DOI: https://doi.org/10.1117/12.2686639

2023-01-01

Abstract:Silicon-organic hybrid (SOH) modulators are promising as they have large bandwidth, high modulation efficiency and low optical loss. In this paper, we present the optical and electrical design and simulation of a high-speed travelling wave SOH modulator with multiple interplay parameters. We also implement the electro-optical co-optimization to delve into the influence of the key design parameters and propose the design guideline. The results demonstrate a modulator with 3 dB bandwidth of 72 GHz, modulation efficiency of 1.26 Vmm and optical loss less than 1 dB.
25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Xi Xiao,Yingtao Hu,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1117/12.920386

2011-01-01

Abstract:We present a kind of depletion-mode silicon modulators based on cascade interleaved PN junctions, which simultaneously provide high modulation efficiency and large modulation bandwidth. The interfaces of the PN junctions are vertical to the waveguide's propagation direction and tolerant with +/- 150nm junction misalignment on the cost of little degradation on the modulation efficiency. The device was fabricated with standard 0.18 mu m CMOS process, and provides a V pi L pi < 1V.cm and an intrinsic bandwidth 39GHz. Over 10GHz electro-optical modulation bandwidth of the device was experimentally obtained. High speed non-return-zero modulation with a bit rate up to 25Gbit/s was finally demonstrated.
Design Optimization and Implementation of Silicon Mach-Zehnder Electro-Optic Modulators

Linjie ZHOU,Yanyang ZHOU,Liangjun LU

DOI: https://doi.org/10.3969/j.issn.1009-6868.2017.05.005

2018-01-01

Abstract:In this paper,the design optimization and experimental demonstration of single-drive push-pull silicon electro-optic modulators are presented. In order to improve the modulation efficiency and lower the optical propagation loss,the PN junction profile and doping concentrations are firstly optimized. Next,the impedance match,phase match and microwave loss are studied,and in particular,the influence of low-doping slab width,travelling-wave electrode (TWE) width and spacing on the modulator performance are analyzed. Following the comprehensive theoretical analysis and numerical simulation,the modulator performance measurements,including the optical transmission spectrum upon single-drive push-pull tuning,small-signal microwave signal response,and high-speed digital signal modulation are consequently carried out. The on-chip insertion loss of the modulators is around 7-9 dB and the half-wave voltage is 5 V. At a bias voltage of 0 V,the optimized modulator has a modulation bandwidth of >18 GHz. The microwave reflectivity at the entrance of the TWE is less than -20 dB,suggesting good impedance match. When the reverse bias voltage is increased to 4 V,the modulation bandwidth can exceed 30 GHz,allowing for realization of 56 Gbit/s on-off keying (OOK) and 40 Gbit/s binary phase-shift keying (BPSK) modulations.
High-speed silicon modulator based on cascaded microring resonators.

Yingtao Hu,Xi Xiao,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015079

IF: 3.8

2012-01-01

Optics Express

Abstract:A high-speed silicon modulator based on cascaded double microring resonators is demonstrated in this paper. The proposed modulator experimentally achieved 40 Gbit/s modulation with an extinction ratio of 3.9 dB. Enhancement of the modulator achieves with an ultra-high optical bandwidth of 0.41 nm, corresponding to 51 GHz, was accomplished by using cascaded double ring structure. The described modulator can provides an ultra-high-speed optical modulation with a further improvement in electrical bandwidth of the device. (c) 2012 Optical Society of America
Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Xi Xiao,Hao Xu,Xianyao Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/CLEOPR.2013.6600260

2013-01-01

Abstract:Compact and high-speed silicon microring and Mach-Zehnder modulators are presented. Low-power serial 60 Gbit/s and 4λ×50 Gbit/s modulations are both experimentally demonstrated.

Silicon High-Speed BPSK Modulator: Design and Optimization

Silicon high-speed binary phase-shift keying modulator with a single-drive push–pull high-speed traveling wave electrode

Optimized Silicon Mzi Modulators for 50 Gbit/S Ook and 40 Gbit/S Bpsk Modulation

Single-drive Push-Pull Silicon Mach-Zehnder Modulator for OOK and BPSK Modulation

50 Gb/s Silicon QPSK Modulator with Single-Drive Push-Pull Traveling Wave Electrodes Design

64 Gb/s silicon QPSK modulator with single-drive push-pull traveling wave electrodes

Simulation and Experimental Results of Single Drive Silicon Mach-Zehnder Modulator

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Low-voltage, high speed, compact silicon modulator for BPSK modulation.

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

Optimized Silicon Qpsk Modulator with 64-Gb/s Modulation Speed

High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Modeling and optimization of a single-drive push–pull silicon Mach–Zehnder modulator

10-Gb/s 53.1-Km BPSK Transmission of Silicon Mach-Zehnder Modulator

Design and Electro-Optical Co-Optimization of High-Speed Travelling Wave Silicon-Organic Hybrid Modulators

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Design Optimization and Implementation of Silicon Mach-Zehnder Electro-Optic Modulators

High-speed silicon modulator based on cascaded microring resonators.

Compact and power-efficient silicon modulators Beyond 60 Gbit/s