10-Gb/s 53.1-Km BPSK Transmission of Silicon Mach-Zehnder Modulator

Tiantian Li,Junlong Zhang,Huaxiang Yi,Wei Tan,Qifeng Long,Zhiping Zhou,Xingjun Wang,Hequan Wu

DOI: https://doi.org/10.1364/acpc.2013.aw4a.3

2013-01-01

Abstract:25Gb/s BPSK modulation was presented employing 2mm Si Mach-Zehnder (MZ) modulator, by which the BPSK transmission was demonstrated through 53.1-km Single Mode Fiber (SMF) in 10 Gb/s under 6Vpp driving voltage.

What problem does this paper attempt to address?

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Oskars Ozolins,Armands Ostrovskis,Michael Koenigsmann,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Ryan P. Scott,Hansjoerg Haisch,Hadrien Louchet,Aleksandrs Marinins,Sandis Spolitis,Jurgis Porins,Lu Zhang,Richard Schatz,Xianbin Yu,Vjaceslavs Bobrovs,Markus Gruen,Xiaodan Pang

DOI: https://doi.org/10.1109/icton59386.2023.10207236

2023-01-01

Abstract:Silicon photonics (SiP) is a key enabling technology for high-baudrate communication. It is a key technology for future 800 Gbps and 1.6 Tbps solutions to meet the ever-increasing demands. The 800G pluggable multi-source agreement (MSA) suggests that intensity-modulated direct-detection (IM/DD) is the most sustainable way forward [1]. The high operational bandwidth of each transceiver component is essential. An ultra-compact SiP slow light modulator with record-high bandwidth of 110 GHz shows the potential [2]. Therefore, both multilevel pulse amplitude modulation (PAM) and on-off keying (OOK) should be considered. SiP offers excellent production yield and has a substantial role in optical interconnects. SiP ring resonator modulators (RRM) have unique advantages like a small footprint, simple driver configuration, low power consumption, and suitability for multichannel applications. On the other hand, the SiP Mach-Zehnder modulator (MZM) offers differential drive benefits.
60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.21.004116

IF: 3.8

2013-01-01

Optics Express

Abstract:We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a V pi L pi < 2 V.cm were achieved in an MZM with a 750 mu m-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB. (C)2013 Optical Society of America
Low-voltage, high speed, compact silicon modulator for BPSK modulation.

Tiantian Li,Junlong Zhang,Huaxiang Yi,Wei Tan,Qifeng Long,Zhiping Zhou,Xingjun Wang,Hequan Wu

DOI: https://doi.org/10.1364/OE.21.023410

IF: 3.8

2013-01-01

Optics Express

Abstract:A low voltage, high speed, compact silicon Mach-Zehnder Interferometer (MZI) modulator for Binary Phase Shift Keying (BPSK) modulation has been demonstrated. High modulation efficiency, V pi L pi equals to 0.45V.cm, was obtained in a 1mm length device owing to a higher doping concentration and low-loss traveling-wave electrode. 25Gb/s non-return-to-zero(NRZ)-BPSK with 6V(pp) RF driving signal was achieved. Driven by a very low 3V(pp) RF signal, the 10Gb/s NRZ-BPSK was also realized benefiting from the high modulation efficiency and the low-voltage driving scheme. The power consumption for the BPSK modulation was as low as 0.118W. These results prove that the silicon modulator is suitable for advanced communication system with low power consumption. (C) 2013 Optical Society of America
Simulation and Experimental Results of Single Drive Silicon Mach-Zehnder Modulator

Haowen Shu,Junlong Zhang,Xingjun Wang,Tiantian Li,Zhiping Zhou

DOI: https://doi.org/10.1364/acpc.2016.af2a.56

2016-01-01

Abstract:After optimizing the electrode structure, 15 Gb/s BPSK modulation was presented employing a 3mm single drive silicon Mach-Zehnder modulator under 3.5v driving voltage.
8×250 Gbit/s PAM4 Transmission over 1 Km Single Mode Fiber with an All-Silicon LAN WDM Transmitter.

Penghui Xia,Zhongya Li,Nanan Ning,Qiang Zhang,Xiaoqing Jiang,Jianyi Yang,Junwen Zhang,Hui Yu

DOI: https://doi.org/10.1364/ofc.2023.tu3i.6

2023-01-01

Abstract:We demonstrate 2 Tbit/s (8×250 Gbit/s) and 1.6 Tbit/s (8×200 Gbit/s) 4-level pulse amplitude modulation (PAM4) transmissions over 1 km and 10 km single mode fibers (SMF) with an all-silicon wavelength division multiplexing transmitter chip.
High-speed packaging for silicon modulator

Yadong Liu,Tao Chu

DOI: https://doi.org/10.3390/optofluidics2017-04387

2017-01-01

Abstract:This paper reports a high-speed packaging for Silicon Mach-Zehnder modulators (MZMs). The radio frequency (RF) input port of the package is commercially available GPPO type. High-frequency ceramic substrate is designed to shorten the length of gold wire to suppress the RF attenuation. Gratings and single-mode fibers using inclined-surface coupling are used to realize low-loss and large tolerance coupling. In measurement, clear eye diagrams with ER of 10.1 dB and 7.6 dB were obtained at 25 Gb/s and 40 Gb/s modulations. Silicon photonics has become a hot research topic in the field of optoelectronics in recent years, since silicon–based optical device can achieve high density integration, low power consumption, low cost photonic devices, realize monolithic integration with electronic devices, and it is compatible with traditional CMOS processes [1]. Silicon electro-optic modulators which are key devices in optoelectronic information transmission and processing have got great developments in recent years. High speed OOK silicon modulators have been demonstrated [2-4]. The silicon modulator packaging has also been studied [5-6]. However, the operating speed of packaged silicon modulators still need to be improved. Our butterfly package for silicon modulator is illustrated in Figure 1. Two main designs were applied for high speed packaging: the modulator chip was designed with reverse PN mode, whose PN junction capacitance is smaller and the modulator electrode was carefully designed using CPW travelling-wave electrodes; GCPW transmission lines with metallic holes were adopted to fabricate the high-frequency ceramic substrates to make the high-speed electrical signal effective loading on the electrode of the MZM chip. Since micro-strip-like line (MSL) mode in GCPW line might exist, which usually cause energy coupling of CPW mode and prompt a microwave resonant of transmission response in high frequency range [7], we made metallic holes on a transmission line to suppress the microwave resonant [8-9]. Grating coupler and single-mode fiber with inclined-surface are used in optical coupling. The advantages of this optical coupling method is larger misalignment tolerance and cheap cleaved fiber packaging. Nickel metal tube is installed close to the inclined-surface of single-mode fiber, the position and angle of the optical fiber is adjusted by special fixture clamping nickel metal tube and adjusting the special fixture. Assuming the optical fiber is parallel to the chip surface, there is a relation of θ=2*φ-90o. We choose the φ=51 deg. as our grating incidence angle is 12 degree. Eye-diagram measurements were carried to demonstrate the high-speed operation of the packaged modules. Experimental results were presented in Fig. 4(a) and 4(b). Clear eye diagrams with ERs of 10.1 dB and 7.6 dB were obtained at 25 Gb/s and 40 Gb/s modulation speed. By improving the welding between the pin of GPPO connector and ceramic substrates, further reducing the length of gold wires from the ceramic substrates to the modulator pads, the speed of the packaged MZM module could be higher.
49.6 Gb/s Direct Detection DMT Transmission over 40 Km Single Mode Fibre Using an Electrically Packaged Silicon Photonic Modulator.

C. Lacava,I. Cardea,I. Demirtzioglou,A. E. Khoja,Li Ke,D. J. Thomson,X. Ruan,F. Zhang,G. T. Reed,D. J. Richardson,P. Petropoulos

DOI: https://doi.org/10.1364/oe.25.029798

IF: 3.8

2017-01-01

Optics Express

Abstract:We present the characterization of a silicon Mach-Zehnder modulator with electrical packaging and show that it exhibits a large third-order intermodulation spurious-free dynamic range (> 100 dB Hz2/3). This characteristic renders the modulator particularly suitable for the generation of high spectral efficiency discrete multi-tone signals and we experimentally demonstrate a single-channel, direct detection transmission system operating at 49.6 Gb/s, exhibiting a baseband spectral efficiency of 5 b/s/Hz. Successful transmission is demonstrated over various lengths of single mode fibre up to 40 km, without the need of any amplification or dispersion compensation.
Demonstration of 625 Gbaud Advanced Modulation Formats with Subcarrier Multiplexed Technique on Silicon Mach-Zehnder Modulator

Tiantian Li,Dan Wang,Junlong Zhang,Zhiping Zhou,Fan Zhang,Xingjun Wang,Hequan Wu

DOI: https://doi.org/10.1364/oe.22.019818

IF: 3.8

2014-01-01

Optics Express

Abstract:Silicon Mach-Zehnder modulators (Si MZMs) with good linearity are designed and fabricated. 6.25 Gbaud Nyquist 16, 32 and 64-Quadrature Amplitude Modulation (QAM) optical signals were successfully generated by intensity modulation from the Si MZM, and the effective data rates are 22.61 Gb/s, 28.26 Gb/s and 33.91 Gb/s respectively. The subcarrier multiplexed technique and direct detection scheme were employed in this experiment. After 53.1 km transmission, the BERs of 16-QAM and 32-QAM are both below the 7% hard-decision forward error correction limit, while the back-to-back BER of 64-QAM is well below the 20% soft-decision forward error correction limit. These results demonstrated that the Si MZM can be used in the high-capacity low-cost short-haul intensity modulation and direct detection system.
Beyond 200G Single Sideband Transmission over 80km with a Silicon IQ Modulator

Lei Zhang,Xiaoke Ruan,Fan Yang,Xinyu Chen,Yanping Li,Fan Zhang

DOI: https://doi.org/10.1364/acpc.2020.m4d.3

2020-01-01

Abstract:We experimentally demonstrate ultra-high speed metro-scale optical transmission of SSB PAM-4 signal with a record single lane bit rate of 204Gb/s over 80km SSMF based on a silicon IQ modulator with two-parallel Mach-Zehnder structure.
100Gbps, 160 km IM-DD transmission of WDM Nyquist-16QAM signal based on silicon Mach-Zehnder modulator

dan wang,tiantian li,junlong zhang,fan zhang,zhiping zhou,xingjun wang,hequan wu

DOI: https://doi.org/10.1109/ECOC.2014.6964046

2014-01-01

Abstract:100-Gb/s WDM Nyquist-16QAM signals (10×10Gb/s with 15GHz channel spacing) are generated by intensity modulation on silicon MZM. After 160 km SSMF transmission and direct detection, the BERs of all the ten channels are below the FEC threshold of 3.8×10-3.
Silicon High-Speed BPSK Modulator: Design and Optimization

Jinting Wang,Linjie Zhou,Haike Zhu,Qianqian Wu,Rui Yang,Lei Liu,Tao Wang,Jianping Chen

DOI: https://doi.org/10.1364/ACPC.2014.AF1A.1

2014-01-01

Abstract:We report 20 Gb/s binary phase shift keying (BPSK) modulation in a silicon Mach-Zehnder modulator integrated with a single-drive push-pull electrode. The device is optimized using a distributed circuit model.
50 Gb/s Silicon QPSK Modulator with Single-Drive Push-Pull Traveling Wave Electrodes Design

Haike Zhu,Linjie Zhou,Tao Wang,Lei Liu,Yanyang Zhou,Jinting Wang,Qianqian Wu,Anbang Xie,Rui Yang,Zuxiang Li,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1364/acpc.2014.af1a.2

2014-01-01

Abstract:We demonstrate a silicon QPSK modulator consisting of two nested Mach-Zehnder interferometers with 3.5 mm long traveling-wave electrodes. 50 Gb/s QPSK modulation is achieved with power consumption of 9.3 pJ/bit.
50 Gbit/S Silicon Modulator Operated at 1950 Nm

Wenxiang Li,Miaofeng Li,Hongguang Zhang,Yuguang Zhang,Hucheng Xie,Xi Xiao,Ke Xu

DOI: https://doi.org/10.1364/ofc.2020.m1d.4

2020-01-01

Abstract:We have experimentally demonstrated an integrated silicon Mach-Zehnder modulator which operates at 1950 nm wavelength range. 50 Gbit/s intensity modulation is achieved with bit error rate below 3.8×10−3.
High Baud Rate Transmission with Silicon Photonic Modulators

Fan Zhang,Lei Zhang,Xiaoke Ruan,Fan Yang,Hao Ming,Yanping Li

DOI: https://doi.org/10.1109/jstqe.2021.3055582

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:We review high baud rate operation of silicon photonic modulators with emphasis on short-reach and metro-haul applications. The current status of both devices and digital signal processing are discussed. The basic design of a typical carrier-depletion-based dual-drive traveling-wave Mach-Zehnder modulator (TW-MZM) is studied by simulation. Based on an all-silicon TW-MZM, we report the transmission experiments of high baud rate single sideband 4-ary pulse amplitude modulation (PAM-4) signals with linear equalization and artificial neural network based equalization, respectively. Our work indicates all-silicon modulators can address the requirements of future optical communication systems operating at 100 Gbaud.
56 Gb/s direct detected single-sideband DMT transmission over 320-km SMF using silicon IQ modulator

chi yan wong,sen zhang,lei liu,tao wang,qiang zhang,yuanyuan fang,shupeng deng,gordon ning liu,xiaogeng xu

DOI: https://doi.org/10.1364/ofc.2015.th4a.3

2015-01-01

Abstract:High performance silicon IQ modulator is fabricated and used to demonstrate the first 56 Gb/s direct detected single-sideband DMT transmission over 320-km SMF. The required OSNR of 26.3 dB at BER of 3.7×10−3 was achieved.
Single-drive Push-Pull Silicon Mach-Zehnder Modulator for OOK and BPSK Modulation

Haike Zhu,Linjie Zhou,Lei Liu,Tao Wang,Yanyang Zhou,Jinting Wang,Qianqian Wu,Anbang Xie,Rui Yang,Zuxiang Li,Xinwan Li,Jianping Chen

2014-01-01

Abstract:We demonstrate a single-drive high-speed silicon Mach-Zehnder modulator with the V-pi.L of 1.35 V.cm. 20 Gb/s on-off keying (OOK) and 15 Gb/s binary phase shift keying (BPSK) modulations are achieved.
64 Gb/s silicon QPSK modulator with single-drive push-pull traveling wave electrodes

Haike Zhu,Linjie Zhou,Tao Wang,Lei Liu,Chi Yan Wong,Yanyang Zhou,Jinting Wang,Qianqian Wu,Anbang Xie,Rui Yang,Zuxiang Li,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1364/cleo_si.2015.sw3n.7

2015-01-01

Abstract:We demonstrate a silicon QPSK modulator consisting of two nested Mach-Zehnder interferometers with 3.5 mm long traveling-wave electrodes. 64 Gb/s QPSK modulation is achieved with an EVM of 24.4% and power consumption of 7.1 pJ/bit.
Optimized Silicon Mzi Modulators for 50 Gbit/S Ook and 40 Gbit/S Bpsk Modulation

Yanyang Zhou,Linjie Zhou,Haike Zhu,Jingting Wang,Feiran Su,Zhiren Wang,Lei Liu,Tao Wang,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1109/oecc.2015.7340098

2015-01-01

Abstract:We report 50Gb/s On-Off keying (OOK) and 40Gb/s binary phase shift keying (BPSK) modulation in a single-drive push-pull silicon Mach-Zehnder modulator with optimized segmented electrode design. The measured modulation efficiency (Vπ·Lπ) is ~1.77 V·cm at 4.0 V reverse bias and the electro-optic (EO) 3-dB bandwidth exceeds 30 GHz at 6.0 V reverse bias.
Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission.

Huaxiang Yi,Qifeng Long,Wei Tan,Li Li,Xingjun Wang,Zhiping Zhou

DOI: https://doi.org/10.1364/OE.20.027562

IF: 3.8

2012-01-01

Optics Express

Abstract:We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also analyzed comparatively with a lithium niobate Mach-Zehnder modulator in back-to-back transmission and long-haul transmission, respectively, and verified the negative chirp parameter of the silicon modulator through the experiment. The result of low power penalty indicates a practical application for the silicon modulator in the middle-or long-distance transmission systems. (C) 2012 Optical Society of America

10-Gb/s 53.1-Km BPSK Transmission of Silicon Mach-Zehnder Modulator

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Low-voltage, high speed, compact silicon modulator for BPSK modulation.

Simulation and Experimental Results of Single Drive Silicon Mach-Zehnder Modulator

8×250 Gbit/s PAM4 Transmission over 1 Km Single Mode Fiber with an All-Silicon LAN WDM Transmitter.

High-speed packaging for silicon modulator

49.6 Gb/s Direct Detection DMT Transmission over 40 Km Single Mode Fibre Using an Electrically Packaged Silicon Photonic Modulator.

Demonstration of 625 Gbaud Advanced Modulation Formats with Subcarrier Multiplexed Technique on Silicon Mach-Zehnder Modulator

Beyond 200G Single Sideband Transmission over 80km with a Silicon IQ Modulator

100Gbps, 160 km IM-DD transmission of WDM Nyquist-16QAM signal based on silicon Mach-Zehnder modulator

Silicon High-Speed BPSK Modulator: Design and Optimization

50 Gb/s Silicon QPSK Modulator with Single-Drive Push-Pull Traveling Wave Electrodes Design

50 Gbit/S Silicon Modulator Operated at 1950 Nm

High Baud Rate Transmission with Silicon Photonic Modulators

56 Gb/s direct detected single-sideband DMT transmission over 320-km SMF using silicon IQ modulator

Single-drive Push-Pull Silicon Mach-Zehnder Modulator for OOK and BPSK Modulation

64 Gb/s silicon QPSK modulator with single-drive push-pull traveling wave electrodes

Optimized Silicon Mzi Modulators for 50 Gbit/S Ook and 40 Gbit/S Bpsk Modulation

Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission.