High Bandwidth Silicon Mach-Zehnder Modulator with 1 V·cm VπL

Qingfeng Long,Wei Tan,Junlong Zhang,Huaxiang Yi,Tiantian Li,Zhiping Zhou,Xingjun Wang

DOI: https://doi.org/10.1364/acpc.2013.ath3a.2

2013-01-01

Abstract:We demonstrated a carrier-depletion type silicon Mach-Zehnder modulator with 3dB bandwidth beyond 23GHz, as well as with modulation efficiency VπL of ~1 V·cm. 30Gb/s modulation eye diagram was observed with S/N ~9.6dB.

What problem does this paper attempt to address?

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.21.004116

IF: 3.8

2013-01-01

Optics Express

Abstract:We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a V pi L pi < 2 V.cm were achieved in an MZM with a 750 mu m-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB. (C)2013 Optical Society of America
A high linear silicon Mach-Zehnder modulator by the dual-series architecture

Qiang Zhang,Hui Yu,Zhilei Fu,Penghui Xia,Xiaofei Wang

DOI: https://doi.org/10.1364/OFC.2020.Th2A.12

2020-01-01

Abstract:We experimentally demonstrate a highly linear dual-series silicon modulator by tuning properly the power splitting ratio of the driving RF signal on the its two sub-MZMs, with SFDR of 109.5/100.5 dB·Hz2/3 at 1/10 GHz.
High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

Hao Xu,Xi Xiao,Xianyao Li,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/acpc.2012.as3b.3

2012-01-01

Abstract:We report a 40 Gbit/s traveling-wave silicon Mach-Zehnder modulator fabricated in a commercial 0.18 μm CMOS process. A distributed circuit model is proposed to characterize the bandwidth performance of this modulator.
30 Gbps high optical bandwidth silicon modulator

Hao Xu,Xianyao Li,Xi Xiao,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1109/Group4.2013.6644431

2013-01-01

Abstract:We report a high speed silicon modulator with a 3 dB optical bandwidth of 39 nm. 30 Gbps electro-optical modulations were experimentally demonstrated with a low driving voltage of 3 V.
High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

Hao Xu,Xi Xiao,Xianyao Li,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015093

IF: 3.8

2012-01-01

Optics Express

Abstract:A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V pi L pi = 1.5 similar to 2.0 V.cm and low doping-induced loss of similar to 10 dB/cm by applying a relatively low doping concentration of 2 x 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 mu m. (c) 2012 Optical Society of America
High-speed Silicon Modulators for the 2 Μm Wavelength Band

Wei Cao,David Hagan,David J. Thomson,Milos Nedeljkovic,Callum G. Littlejohns,Andy Knights,Shaif-Ul Alam,Junjia Wang,Frederic Gardes,Weiwei Zhang,Shenghao Liu,Ke Li,Mohamed Said Rouifed,Guo Xin,Wanjun Wang,Hong Wang,Graham T. Reed,Goran Z. Mashanovich

DOI: https://doi.org/10.1364/optica.5.001055

IF: 10.4

2018-01-01

Optica

Abstract:The 2 mu m wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach-Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (V-pi (.) L-pi) is 2.68 V(.)cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 mu m measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 mu m wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 mu m window. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.
High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Oskars Ozolins,Armands Ostrovskis,Michael Koenigsmann,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Ryan P. Scott,Hansjoerg Haisch,Hadrien Louchet,Aleksandrs Marinins,Sandis Spolitis,Jurgis Porins,Lu Zhang,Richard Schatz,Xianbin Yu,Vjaceslavs Bobrovs,Markus Gruen,Xiaodan Pang

DOI: https://doi.org/10.1109/icton59386.2023.10207236

2023-01-01

Abstract:Silicon photonics (SiP) is a key enabling technology for high-baudrate communication. It is a key technology for future 800 Gbps and 1.6 Tbps solutions to meet the ever-increasing demands. The 800G pluggable multi-source agreement (MSA) suggests that intensity-modulated direct-detection (IM/DD) is the most sustainable way forward [1]. The high operational bandwidth of each transceiver component is essential. An ultra-compact SiP slow light modulator with record-high bandwidth of 110 GHz shows the potential [2]. Therefore, both multilevel pulse amplitude modulation (PAM) and on-off keying (OOK) should be considered. SiP offers excellent production yield and has a substantial role in optical interconnects. SiP ring resonator modulators (RRM) have unique advantages like a small footprint, simple driver configuration, low power consumption, and suitability for multichannel applications. On the other hand, the SiP Mach-Zehnder modulator (MZM) offers differential drive benefits.
Silicon Dual-Series Mach-Zehnder Modulator with High Linearity

Qiang Zhang,Hui Yu,Linghua Wang,Penghui Xia,Qiman Cheng,Zhilei Fu,Xiaofei Wang,Jianyi Yang

DOI: https://doi.org/10.1364/ol.44.005655

IF: 3.6

2019-01-01

Optics Letters

Abstract:In this Letter, we demonstrate a highly linear silicon modulator based on the dual-series Mach-Zehnder modulator (MZM) architecture. The two sub-MZMs are biased at quadrature points of opposite polarities. A proper power-splitting ratio of the driving RF signal on the two sub-MZMs enables the suppression of the third order intermodulation distortion (IMD3). The spurious-free dynamic ranges (SFDRs) for IMD3 are 109.5/100.5 dB.Hz(2/3 )at 1/10 GHz. In contrast, the reference single MZM on the same chip exhibits SFDRs of 95.2/86.8 dB.Hz(2/3) at 1/10 GHz at its optimal reverse bias voltage. (C) 2019 Optical Society of America
25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Xi Xiao,Yingtao Hu,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1117/12.920386

2011-01-01

Abstract:We present a kind of depletion-mode silicon modulators based on cascade interleaved PN junctions, which simultaneously provide high modulation efficiency and large modulation bandwidth. The interfaces of the PN junctions are vertical to the waveguide's propagation direction and tolerant with +/- 150nm junction misalignment on the cost of little degradation on the modulation efficiency. The device was fabricated with standard 0.18 mu m CMOS process, and provides a V pi L pi < 1V.cm and an intrinsic bandwidth 39GHz. Over 10GHz electro-optical modulation bandwidth of the device was experimentally obtained. High speed non-return-zero modulation with a bit rate up to 25Gbit/s was finally demonstrated.
Highly Efficient Silicon Michelson Interferometer Modulators

Xianyao Li,Xi Xiao,Hao Xu,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2013.2238625

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:We present the first high-speed silicon Michelson interferometer (MI) modulator with two 500 μm-long phase shifters. The utilized MI optical structure is an enhanced Mach-Zehnder interferometer (MZI) with both arms incorporated with reflective mirrors. The light in the MI travels back and forth along the phase shifting waveguides and therefore doubles the effective length of light-carrier interaction. Improvement on the modulation efficiency is experimentally demonstrated. Our MI modulator shows high efficiency with a low figure of merit VπLπ of 0.72 V·cm~0.91V·cm under the bias of -1 V~-6V. High-speed modulations are performed at 25 Gbit/s and 30 Gbit/s with the extinction ratio of 8 dB and 6.5 dB, respectively, showing great potential in the future optical interconnects.
60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
The Mach-Zehnder Modulator Based on Bi-Layer Graphene-Silicon-waveguide

Feng Zhou,Xiaofeng Jin

DOI: https://doi.org/10.1109/icocn.2017.8121256

2017-01-01

Abstract:We demonstrate that by inserting bi-layer graphene inside silicon waveguide, the modulation ability of the overall waveguide can be greatly enhanced. A Mach-Zehnder modulator based on this structure is proposed and the calculated results show the modulator exhibits an excellent performance in terms of small footprint (35 μm2) and high extinction ration (31 dB). Besides, it requires low applied voltage and can be compatible with CMOS technology.
High Linearity Silicon Modulator Capable of Actively Compensating Input Distortion.

Qiang Zhang,Hui Yu,Penghui Xia,Zhilei Fu,Xiaofei Wang,Jianyi Yang

DOI: https://doi.org/10.1364/ol.391715

IF: 3.6

2020-01-01

Optics Letters

Abstract:In this Letter, we demonstrate an ultra-high linearity silicon carrier-depletion-based modulator by integrating a dual-parallel Mach-Zehnder modulator (DP-MZM) with a 1×2 thermo-optical switch. The operation principle is to manipulate power distributions of RF and optical signals among the two sub-MZMs, so their third-order nonlinearities can cancel each other. Spurious-free dynamic ranges (SFDRs) for the third-order intermodulation distortion (IMD3) are measured to be 123/120dB⋅Hz6/7 at 1/10 GHz, which represents a record-high linearity achieved with silicon-based modulators. As a contrast, SFDRs of a reference single MZM are 113/108dB⋅Hz4/5 at the same frequencies. Furthermore, we first demonstrate that this device is able to actively compensate nonlinear distortions of RF driving signals in the optical domain. Carrier-to-distortion ratios (CDRs) of deliberately distorted two-tone signals are improved from 40/50 dB to 45/72 dB after the modulation.
44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

Xi Xiao,Xianyao Li,Hao Xu,Yingtao Hu,Kang Xiong,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2012.2213244

IF: 2.6

2012-01-01

IEEE Photonics Technology Letters

Abstract:We experimentally demonstrate silicon microring modulators with >40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85 x 10(-5)/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of similar to 8 000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.
Optimization and Demonstration of a Large-bandwidth Carrier-depletion Silicon Optical Modulator

Jing Wang,Chao Qiu,Hao Li,Wei Ling,Le Li,Albert Pang,Zhen Sheng,Aimin Wu,Xi Wang,Shichang Zou,Fuwan Gan

DOI: https://doi.org/10.1109/jlt.2013.2287671

IF: 4.7

2013-12-01

Journal of Lightwave Technology

Abstract:We present the design, fabrication, and measurement of a high-speed carrier-depletion silicon optical modulator based on Mach–Zehnder Interferometer structure. Based on an equivalent circuit model, the traveling-wave electrode size and doping concentration of the PN junction are optimized to achieve a large modulation bandwidth. The modulation efficiency and optical loss at different positions of the PN junction are also simulated. The device is fabricated on silicon-on-insulator (SOI) with 0.13 μm CMOS technology. An insertion loss of 3.9 dB (resp. 6.2 dB) and a $V_{\pi}L_{\pi}$ of 1.62–2.05 V·cm (resp. 1.47–1.97 V·cm) are experimentally realized for 1 mm (resp. 2 mm) long phase shifter. By small signal measurement, the modulator exhibits a 3 dB bandwidth of 30 GHz and 19 GHz for 1 mm and 2 mm long phase shifter, respectively, which agrees well with the simulation results. The optical eye diagram with data rate up to 44 Gb/s is also demonstrated, showing potential in the application of high-speed optical interconnects.

engineering, electrical & electronic,optics,telecommunications
Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Xi Xiao,Hao Xu,Xianyao Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/CLEOPR.2013.6600260

2013-01-01

Abstract:Compact and high-speed silicon microring and Mach-Zehnder modulators are presented. Low-power serial 60 Gbit/s and 4λ×50 Gbit/s modulations are both experimentally demonstrated.
Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission.

Huaxiang Yi,Qifeng Long,Wei Tan,Li Li,Xingjun Wang,Zhiping Zhou

DOI: https://doi.org/10.1364/OE.20.027562

IF: 3.8

2012-01-01

Optics Express

Abstract:We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also analyzed comparatively with a lithium niobate Mach-Zehnder modulator in back-to-back transmission and long-haul transmission, respectively, and verified the negative chirp parameter of the silicon modulator through the experiment. The result of low power penalty indicates a practical application for the silicon modulator in the middle-or long-distance transmission systems. (C) 2012 Optical Society of America
High-speed silicon Michelson interferometer modulator and streamlined IMDD PAM-4 transmission of Mach-Zehnder modulators for the 2 μm wavelength band

Wei Cao,Shenghao Liu,Callum G Littlejohns,David J Thomson,Milos Nedeljkovic,Weiwei Zhang,Ke Li,Mehdi Banakar,Ying Tran,Xingzhao Yan,Han Du,Zhengqi Ren,Frederic Gardes,Graham T Reed,Goran Z Mashanovich

DOI: https://doi.org/10.1364/OE.418285

2021-05-10

Abstract:We demonstrate high-speed silicon modulators optimized for operating at the wavelength of 2 μm. The Mach-Zehnder interferometer (MZI) carrier-depletion modulator with 2 mm phase shifter has a single-arm modulation efficiency (Vπ ·Lπ) of 2.89 V·cm at 4 V reverse bias. Using a push-pull configuration it operates at a data rate of 25 Gbit/s OOK with an extinction ratio of 6.25 dB. We also proposed a mathematically-analysed streamlined IMDD PAM-4 scheme and successfully demonstrated a 25 Gbit/s datarate PAM-4 with the same 2 mm modulator. A Michelson interferometer carrier-depletion modulator with 0.5 mm phase shift length has also been shown with modulation efficiency (Vπ ·Lπ) of 1.36 V·cm at 4 V reverse bias and data rate of 20 Gbit/s OOK. The Michelson interferometer modulator performs similarly to a Mach-Zehnder modulator with twice the phase shifter length.
High Baud Rate All-Silicon Photonics Carrier Depletion Modulators

Jianying Zhou,Jian Wang,Likai Zhu,Qun Zhang

DOI: https://doi.org/10.1109/JLT.2019.2933384

IF: 4.7

2020-01-01

Journal of Lightwave Technology

Abstract:We achieved high performance high speed silicon photonics carrier-depletion Mach-Zehnder modulation with commercial foundry by co-optimization of doping and device design assisted with an accurate electro-optical (EO) model. We demonstrated high performance IQ modulators operating at 85 Gbaud 16 QAM and 64 Gbaud 64 QAM with extinction ratio of over 25 dB. For the design of the high performance all-silicon carrier depletion modulator, we developed modeling and design tools to provide not only accuracy, but also efficiency in the simulation of distributed optical and electronic characteristics of travelling waveguides with different designs of optical and microwave waveguides under various doping conditions, which allow the co-design of velocity phase match between optical and microwave waveguides and the impedance match between microwave travelling waveguide and terminal impedance. Our experimental characterization test data agreed well with the model simulation data. More recently, with practical Nyquist filter and linear compensation in commercial arbitrary wave generator (AWG) and optical modulation analyzer (OMA), we demonstrated 100 Gbaud 32 QAM with an all-silicon IQ modulator, which has 6 dB electro-optical bandwidth of 50 GHz and BER achieving FEC threshold with a modern FEC, showing the potential for Tb/s applications.
High-speed silicon modulator based on cascaded microring resonators.

Yingtao Hu,Xi Xiao,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015079

IF: 3.8

2012-01-01

Optics Express

Abstract:A high-speed silicon modulator based on cascaded double microring resonators is demonstrated in this paper. The proposed modulator experimentally achieved 40 Gbit/s modulation with an extinction ratio of 3.9 dB. Enhancement of the modulator achieves with an ultra-high optical bandwidth of 0.41 nm, corresponding to 51 GHz, was accomplished by using cascaded double ring structure. The described modulator can provides an ultra-high-speed optical modulation with a further improvement in electrical bandwidth of the device. (c) 2012 Optical Society of America

High Bandwidth Silicon Mach-Zehnder Modulator with 1 V·cm VπL

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

A high linear silicon Mach-Zehnder modulator by the dual-series architecture

High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

30 Gbps high optical bandwidth silicon modulator

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

High-speed Silicon Modulators for the 2 Μm Wavelength Band

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Silicon Dual-Series Mach-Zehnder Modulator with High Linearity

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Highly Efficient Silicon Michelson Interferometer Modulators

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

The Mach-Zehnder Modulator Based on Bi-Layer Graphene-Silicon-waveguide

High Linearity Silicon Modulator Capable of Actively Compensating Input Distortion.

44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

Optimization and Demonstration of a Large-bandwidth Carrier-depletion Silicon Optical Modulator

Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission.

High-speed silicon Michelson interferometer modulator and streamlined IMDD PAM-4 transmission of Mach-Zehnder modulators for the 2 μm wavelength band

High Baud Rate All-Silicon Photonics Carrier Depletion Modulators

High-speed silicon modulator based on cascaded microring resonators.