Simulation and Experimental Results of Single Drive Silicon Mach-Zehnder Modulator

Haowen Shu,Junlong Zhang,Xingjun Wang,Tiantian Li,Zhiping Zhou

DOI: https://doi.org/10.1364/acpc.2016.af2a.56

2016-01-01

Abstract:After optimizing the electrode structure, 15 Gb/s BPSK modulation was presented employing a 3mm single drive silicon Mach-Zehnder modulator under 3.5v driving voltage.

What problem does this paper attempt to address?

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.21.004116

IF: 3.8

2013-01-01

Optics Express

Abstract:We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a V pi L pi < 2 V.cm were achieved in an MZM with a 750 mu m-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB. (C)2013 Optical Society of America
High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

Hao Xu,Xi Xiao,Xianyao Li,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/acpc.2012.as3b.3

2012-01-01

Abstract:We report a 40 Gbit/s traveling-wave silicon Mach-Zehnder modulator fabricated in a commercial 0.18 μm CMOS process. A distributed circuit model is proposed to characterize the bandwidth performance of this modulator.
A high linear silicon Mach-Zehnder modulator by the dual-series architecture

Qiang Zhang,Hui Yu,Zhilei Fu,Penghui Xia,Xiaofei Wang

DOI: https://doi.org/10.1364/OFC.2020.Th2A.12

2020-01-01

Abstract:We experimentally demonstrate a highly linear dual-series silicon modulator by tuning properly the power splitting ratio of the driving RF signal on the its two sub-MZMs, with SFDR of 109.5/100.5 dB·Hz2/3 at 1/10 GHz.
Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Xi Xiao,Hao Xu,Xianyao Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/CLEOPR.2013.6600260

2013-01-01

Abstract:Compact and high-speed silicon microring and Mach-Zehnder modulators are presented. Low-power serial 60 Gbit/s and 4λ×50 Gbit/s modulations are both experimentally demonstrated.
60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
10-Gb/s 53.1-Km BPSK Transmission of Silicon Mach-Zehnder Modulator

Tiantian Li,Junlong Zhang,Huaxiang Yi,Wei Tan,Qifeng Long,Zhiping Zhou,Xingjun Wang,Hequan Wu

DOI: https://doi.org/10.1364/acpc.2013.aw4a.3

2013-01-01

Abstract:25Gb/s BPSK modulation was presented employing 2mm Si Mach-Zehnder (MZ) modulator, by which the BPSK transmission was demonstrated through 53.1-km Single Mode Fiber (SMF) in 10 Gb/s under 6Vpp driving voltage.
High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Oskars Ozolins,Armands Ostrovskis,Michael Koenigsmann,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Ryan P. Scott,Hansjoerg Haisch,Hadrien Louchet,Aleksandrs Marinins,Sandis Spolitis,Jurgis Porins,Lu Zhang,Richard Schatz,Xianbin Yu,Vjaceslavs Bobrovs,Markus Gruen,Xiaodan Pang

DOI: https://doi.org/10.1109/icton59386.2023.10207236

2023-01-01

Abstract:Silicon photonics (SiP) is a key enabling technology for high-baudrate communication. It is a key technology for future 800 Gbps and 1.6 Tbps solutions to meet the ever-increasing demands. The 800G pluggable multi-source agreement (MSA) suggests that intensity-modulated direct-detection (IM/DD) is the most sustainable way forward [1]. The high operational bandwidth of each transceiver component is essential. An ultra-compact SiP slow light modulator with record-high bandwidth of 110 GHz shows the potential [2]. Therefore, both multilevel pulse amplitude modulation (PAM) and on-off keying (OOK) should be considered. SiP offers excellent production yield and has a substantial role in optical interconnects. SiP ring resonator modulators (RRM) have unique advantages like a small footprint, simple driver configuration, low power consumption, and suitability for multichannel applications. On the other hand, the SiP Mach-Zehnder modulator (MZM) offers differential drive benefits.
High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

Hao Xu,Xi Xiao,Xianyao Li,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015093

IF: 3.8

2012-01-01

Optics Express

Abstract:A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V pi L pi = 1.5 similar to 2.0 V.cm and low doping-induced loss of similar to 10 dB/cm by applying a relatively low doping concentration of 2 x 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 mu m. (c) 2012 Optical Society of America
Improved Extinction Ratio of Mach-Zehnder Based Optical Modulators on CMOS Platform

Zhiyong Li,Liang Zhou,Xi Xiao,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1007/s12200-012-0197-6

2012-01-01

Frontiers of Optoelectronics

Abstract:Silicon based optical modulators with improved extinction ratio (ER) of 25 dB were demonstrated on complementary metal oxide semiconductor (CMOS) platform. It was proposed that the effect of optical absorption due to free carriers accumulated in silicon should be considered in the analysis of device configuration. Experimental results presented in this study were identical with the proposed analyses. The modulators were operated with the data transmission rate of 3.2 Gbps.
Low-voltage, high speed, compact silicon modulator for BPSK modulation.

Tiantian Li,Junlong Zhang,Huaxiang Yi,Wei Tan,Qifeng Long,Zhiping Zhou,Xingjun Wang,Hequan Wu

DOI: https://doi.org/10.1364/OE.21.023410

IF: 3.8

2013-01-01

Optics Express

Abstract:A low voltage, high speed, compact silicon Mach-Zehnder Interferometer (MZI) modulator for Binary Phase Shift Keying (BPSK) modulation has been demonstrated. High modulation efficiency, V pi L pi equals to 0.45V.cm, was obtained in a 1mm length device owing to a higher doping concentration and low-loss traveling-wave electrode. 25Gb/s non-return-to-zero(NRZ)-BPSK with 6V(pp) RF driving signal was achieved. Driven by a very low 3V(pp) RF signal, the 10Gb/s NRZ-BPSK was also realized benefiting from the high modulation efficiency and the low-voltage driving scheme. The power consumption for the BPSK modulation was as low as 0.118W. These results prove that the silicon modulator is suitable for advanced communication system with low power consumption. (C) 2013 Optical Society of America
High-speed silicon modulator based on cascaded microring resonators.

Yingtao Hu,Xi Xiao,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015079

IF: 3.8

2012-01-01

Optics Express

Abstract:A high-speed silicon modulator based on cascaded double microring resonators is demonstrated in this paper. The proposed modulator experimentally achieved 40 Gbit/s modulation with an extinction ratio of 3.9 dB. Enhancement of the modulator achieves with an ultra-high optical bandwidth of 0.41 nm, corresponding to 51 GHz, was accomplished by using cascaded double ring structure. The described modulator can provides an ultra-high-speed optical modulation with a further improvement in electrical bandwidth of the device. (c) 2012 Optical Society of America
High Bandwidth Silicon Mach-Zehnder Modulator with 1 V·cm VπL

Qingfeng Long,Wei Tan,Junlong Zhang,Huaxiang Yi,Tiantian Li,Zhiping Zhou,Xingjun Wang

DOI: https://doi.org/10.1364/acpc.2013.ath3a.2

2013-01-01

Abstract:We demonstrated a carrier-depletion type silicon Mach-Zehnder modulator with 3dB bandwidth beyond 23GHz, as well as with modulation efficiency VπL of ~1 V·cm. 30Gb/s modulation eye diagram was observed with S/N ~9.6dB.
The Mach-Zehnder Modulator Based on Bi-Layer Graphene-Silicon-waveguide

Feng Zhou,Xiaofeng Jin

DOI: https://doi.org/10.1109/icocn.2017.8121256

2017-01-01

Abstract:We demonstrate that by inserting bi-layer graphene inside silicon waveguide, the modulation ability of the overall waveguide can be greatly enhanced. A Mach-Zehnder modulator based on this structure is proposed and the calculated results show the modulator exhibits an excellent performance in terms of small footprint (35 μm2) and high extinction ration (31 dB). Besides, it requires low applied voltage and can be compatible with CMOS technology.
30 Gbps high optical bandwidth silicon modulator

Hao Xu,Xianyao Li,Xi Xiao,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1109/Group4.2013.6644431

2013-01-01

Abstract:We report a high speed silicon modulator with a 3 dB optical bandwidth of 39 nm. 30 Gbps electro-optical modulations were experimentally demonstrated with a low driving voltage of 3 V.
Silicon Dual-Series Mach-Zehnder Modulator with High Linearity

Qiang Zhang,Hui Yu,Linghua Wang,Penghui Xia,Qiman Cheng,Zhilei Fu,Xiaofei Wang,Jianyi Yang

DOI: https://doi.org/10.1364/ol.44.005655

IF: 3.6

2019-01-01

Optics Letters

Abstract:In this Letter, we demonstrate a highly linear silicon modulator based on the dual-series Mach-Zehnder modulator (MZM) architecture. The two sub-MZMs are biased at quadrature points of opposite polarities. A proper power-splitting ratio of the driving RF signal on the two sub-MZMs enables the suppression of the third order intermodulation distortion (IMD3). The spurious-free dynamic ranges (SFDRs) for IMD3 are 109.5/100.5 dB.Hz(2/3 )at 1/10 GHz. In contrast, the reference single MZM on the same chip exhibits SFDRs of 95.2/86.8 dB.Hz(2/3) at 1/10 GHz at its optimal reverse bias voltage. (C) 2019 Optical Society of America
Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission.

Huaxiang Yi,Qifeng Long,Wei Tan,Li Li,Xingjun Wang,Zhiping Zhou

DOI: https://doi.org/10.1364/OE.20.027562

IF: 3.8

2012-01-01

Optics Express

Abstract:We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also analyzed comparatively with a lithium niobate Mach-Zehnder modulator in back-to-back transmission and long-haul transmission, respectively, and verified the negative chirp parameter of the silicon modulator through the experiment. The result of low power penalty indicates a practical application for the silicon modulator in the middle-or long-distance transmission systems. (C) 2012 Optical Society of America
44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

Xi Xiao,Xianyao Li,Hao Xu,Yingtao Hu,Kang Xiong,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2012.2213244

IF: 2.6

2012-01-01

IEEE Photonics Technology Letters

Abstract:We experimentally demonstrate silicon microring modulators with >40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85 x 10(-5)/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of similar to 8 000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.
Highly Efficient Silicon Michelson Interferometer Modulators

Xianyao Li,Xi Xiao,Hao Xu,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2013.2238625

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:We present the first high-speed silicon Michelson interferometer (MI) modulator with two 500 μm-long phase shifters. The utilized MI optical structure is an enhanced Mach-Zehnder interferometer (MZI) with both arms incorporated with reflective mirrors. The light in the MI travels back and forth along the phase shifting waveguides and therefore doubles the effective length of light-carrier interaction. Improvement on the modulation efficiency is experimentally demonstrated. Our MI modulator shows high efficiency with a low figure of merit VπLπ of 0.72 V·cm~0.91V·cm under the bias of -1 V~-6V. High-speed modulations are performed at 25 Gbit/s and 30 Gbit/s with the extinction ratio of 8 dB and 6.5 dB, respectively, showing great potential in the future optical interconnects.
High-speed Silicon Modulators for the 2 Μm Wavelength Band

Wei Cao,David Hagan,David J. Thomson,Milos Nedeljkovic,Callum G. Littlejohns,Andy Knights,Shaif-Ul Alam,Junjia Wang,Frederic Gardes,Weiwei Zhang,Shenghao Liu,Ke Li,Mohamed Said Rouifed,Guo Xin,Wanjun Wang,Hong Wang,Graham T. Reed,Goran Z. Mashanovich

DOI: https://doi.org/10.1364/optica.5.001055

IF: 10.4

2018-01-01

Optica

Abstract:The 2 mu m wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach-Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (V-pi (.) L-pi) is 2.68 V(.)cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 mu m measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 mu m wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 mu m window. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.
Demonstration of 625 Gbaud Advanced Modulation Formats with Subcarrier Multiplexed Technique on Silicon Mach-Zehnder Modulator

Tiantian Li,Dan Wang,Junlong Zhang,Zhiping Zhou,Fan Zhang,Xingjun Wang,Hequan Wu

DOI: https://doi.org/10.1364/oe.22.019818

IF: 3.8

2014-01-01

Optics Express

Abstract:Silicon Mach-Zehnder modulators (Si MZMs) with good linearity are designed and fabricated. 6.25 Gbaud Nyquist 16, 32 and 64-Quadrature Amplitude Modulation (QAM) optical signals were successfully generated by intensity modulation from the Si MZM, and the effective data rates are 22.61 Gb/s, 28.26 Gb/s and 33.91 Gb/s respectively. The subcarrier multiplexed technique and direct detection scheme were employed in this experiment. After 53.1 km transmission, the BERs of 16-QAM and 32-QAM are both below the 7% hard-decision forward error correction limit, while the back-to-back BER of 64-QAM is well below the 20% soft-decision forward error correction limit. These results demonstrated that the Si MZM can be used in the high-capacity low-cost short-haul intensity modulation and direct detection system.

Simulation and Experimental Results of Single Drive Silicon Mach-Zehnder Modulator

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

A high linear silicon Mach-Zehnder modulator by the dual-series architecture

Compact and power-efficient silicon modulators Beyond 60 Gbit/s

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

10-Gb/s 53.1-Km BPSK Transmission of Silicon Mach-Zehnder Modulator

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

Improved Extinction Ratio of Mach-Zehnder Based Optical Modulators on CMOS Platform

Low-voltage, high speed, compact silicon modulator for BPSK modulation.

High-speed silicon modulator based on cascaded microring resonators.

High Bandwidth Silicon Mach-Zehnder Modulator with 1 V·cm VπL

The Mach-Zehnder Modulator Based on Bi-Layer Graphene-Silicon-waveguide

30 Gbps high optical bandwidth silicon modulator

Silicon Dual-Series Mach-Zehnder Modulator with High Linearity

Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission.

44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

Highly Efficient Silicon Michelson Interferometer Modulators

High-speed Silicon Modulators for the 2 Μm Wavelength Band

Demonstration of 625 Gbaud Advanced Modulation Formats with Subcarrier Multiplexed Technique on Silicon Mach-Zehnder Modulator