Toward High Performance Cu2ZnSn(S,Se)4 Solar Cells Through Nanocrystal Precursors

Huanping Zhou

DOI: https://doi.org/10.1364/pv.2013.pw2c.2

2013-01-01

Abstract:We present the progresses of controlling elemental distributions in fully solution-processed 8.6% Cu2ZnSn(S,Se)4 device through nanocrystal precursors, and attempts in addressing open circuit voltage deficit and short minority carrier lifetime issues.

What problem does this paper attempt to address?

Spatial Element Distribution Control in a Fully Solution-Processed Nanocrystals-Based 8.6% Cu 2 ZnSn(S,Se) 4 Device

shenglin ye,wanching hsu,huanping zhou,song luo,tzebin song,yaotsung hsieh,hsinsheng duan,wenbing yang,chiajung hsu,chengyang jiang,brion bob,yang yang

DOI: https://doi.org/10.1021/nn503992e

IF: 17.1

2014-01-01

ACS Nano

Abstract:A fully solution-processed high performance Cu2ZnSn(S,Se)4 (CZTSSe, kesterite) device has been demonstrated. It is based on the rational engineering of elemental spatial distributions in the bulk and particularly near the surface of the film from nanocrystal precursors. The nanocrystals are synthesized through a modified colloidal approach, with excellent solubility over a large compositional window, followed by a selenization process to form the absorber. The X-ray photoluminescence (XPS) depth profiling indicates an undesirable Sn-rich surface of the selenized film. An excessive Zn species was quantitatively introduced through nanocrystals precursor to correct the element distribution, and accordingly a positive correlation between the spatial composition in the bulk/surface film and the resulting device parameter is established. The enhanced device performance is associated with the reduced interfacial recombination. With a Zn content 1.6 times more than the stoichiometry; the optimized device, which is fabricated by employing a full solution process from the absorber to the transparent top electrode, demonstrates a performance of 8.6%. This composition-control approach through stoichiometric adjustments of nanocrystal precursors, and the developed correlation between the spatial composition and device performance may also benefit other multielement-based photovoltaics.
Se as hetero-nucleation seeds reinforcing intermetallic diffusion for improved electrodeposition-processed CZTS solar cells

Jingling Liu,Xinyu Wu,Ying Xue,Sheng Liu,Zhiying Zhu,Xinsheng Liu,Ke Cheng,Zuliang Du

DOI: https://doi.org/10.1016/j.nanoen.2024.110183

IF: 17.6

2024-09-03

Nano Energy

Abstract:Pure sulfide-based Cu 2 ZnSnS 4 (CZTS) stands as a competitive photovoltaic material, composted of earth-abundant, low-cost, and stable constituent elements. The stacked electrodeposition process has garnered attention owing to its facile regulation of elemental composition, and its non-vacuum, room-temperature, water-based solvent operating conditions. However, the limitation based on the stacked electrodeposition-processed CZTS primarily stems from the numerous defects and detrimental interfaces induced by the deficient intermetallic diffusion. Herein, a Se nanoparticle layer at the back interface is introduced to enhance the intermetallic diffusion, optimize the precursor morphology, and subsequently accelerate the grain growth. Comprehensive characterizations reveal Se, acting as the hetero-nucleation seeds, catalyzes Cu deposition and promotes a highly porous structure with a homogeneous elemental distribution. Consequently, high-quality CZTS with enhanced crystallinity and passivated defects is achieved, thereby promoting carrier transport and suppressing non-radiative recombination. These sequential positive effects result in a substantial improvement in short current density ( J sc ) and fill factor (FF), attaining an improved efficiency. Our findings offer a promising strategy to overcome the issues of the stacked electrodeposition-processed films and highly contribute to the development of high-quality CZTS-based solar cells.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Rational Defect Passivation of Cu2ZnSn(S,Se)4 Photovoltaics with Solution-Processed Cu2ZnSnS4:Na Nanocrystals.

Huanping Zhou,Tze-Bin Song,Wan-Ching Hsu,Song Luo,Shenglin Ye,Hsin-Sheng Duan,Chia-Jung Hsu,Wenbing Yang,Yang

DOI: https://doi.org/10.1021/ja407202u

IF: 15

2013-01-01

Journal of the American Chemical Society

Abstract:An effective defect passivation route has been demonstrated in the rapidly growing Cu2ZnSn(S,Se)4 (CZTSSe) solar cell device system by using Cu2ZnSnS4:Na (CZTS:Na) nanocrystals precursors. CZTS:Na nanocrystals are obtained by sequentially preparing CZTS nanocrystals and surface decorating of Na species, while retaining the kesterite CZTS phase. The exclusive surface presence of amorphous Na species is proved by X-ray photoluminescence spectrum and transmission electron microscopy. With Na-free glasses as the substrate, CZTS:Na nanocrystal-based solar cell device shows 50% enhancement of device performance (∼6%) than that of unpassivated CZTS nanocrystal-based device (∼4%). The enhanced electrical performance is closely related to the increased carrier concentration and elongated minority carrier lifetime, induced by defect passivation. Solution incorporation of extrinsic additives into the nanocrystals and the corresponding film enables a facile, quantitative, and versatile approach to tune the defect property of materials for future optoelectronic applications.
Novel solution processing of high-efficiency Earth-abundant Cu2 ZnSn(S,Se)4 solar cells.

Wenbing Yang,Hsin-Sheng Duan,Brion Bob,Huanping Zhou,Bao Lei,Choong-Heui Chung,Sheng-Han Li,William W Hou,Yang Yang

DOI: https://doi.org/10.1002/adma.201201785

IF: 29.4

2012-01-01

Advanced Materials

Abstract:A novel solution-based approach is presented to process earth-abundant Cu(2)ZnSn(S,Se)(4) absorbers using fully dissolved CZTS precursors in which each of the elemental constituents intermix on a molecular scale. This method enables the low-temperature processing of chemically clean kesterite films with excellent homogeneity. The high performance of resulting optoelectronic devices represents a chance to extend the impact of CZTS into the next chapter of thin-film solar cells.
Benign Solutions and Innovative Sequential Annealing Processes for High Performance Cu2ZnSn(Se,S)4 Photovoltaics

Chia-Jung Hsu,Hsin-Sheng Duan,Wenbing Yang,Huanping Zhou,Yang

DOI: https://doi.org/10.1002/aenm.201301287

IF: 27.8

2013-01-01

Advanced Energy Materials

Abstract:Solution‐based earth‐abundant Cu2ZnSn(Se,S)4 (CZTSSe) is proven to be a promising tool for thin‐film photovoltaic fabrication. Combining fully dissolved copper (Cu) and zinc/tin (Zn/Sn) hydrazinium constituents in an ethanolamine (EA) and dimethylsulfoxide (DMSO) solution mixture forms the CZTS precursor. All solutes in the precursor solution are intermixed on the molecular scale with excellent homogeneity. Sequential annealing steps under chalcogen vapor allow for enhanced grain growth while preventing the back contact from forming an excessively thick Mo(S,Se)2 layer. The resulting devices achieve power conversion efficiencies of 7.5% under 1 sun conditions.
Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Zuoyun Wang,Rutao Meng,Hongling Guo,Yali Sun,Yue Liu,Huamei Zhang,Zixiu Cao,Jiabin Dong,Xuejun Xu,Guangxing Liang,Licheng Lou,Dongmei Li,Qingbo Meng,Yi Zhang

DOI: https://doi.org/10.1002/smll.202300634

IF: 13.3

Small

Abstract:Increasing the fill factor (FF) and the open-circuit voltage (VOC ) simultaneously together with non-decreased short-circuit current density (JSC ) are a challenge for highly efficient Cu2 ZnSn(S,Se)4 (CZTSSe) solar cells. Aimed at such target in CZTSSe solar cells, a synergistic strategy to tailor the recombination in the bulk and at the heterojunction interface has been developed, consisting of atomic-layer deposited aluminum oxide (ALD-Al2 O3 ) and (NH4 )2 S treatment. With this strategy, deep-level CuZn defects are converted into shallower VCu defects and improved crystallinity, while the surface of the absorber is optimized by removing Zn- and Sn-related impurities and incorporating S. Consequently, the defects responsible for recombination in the bulk and at the heterojunction interface are effectively passivated, thereby prolonging the minority carrier lifetime and increasing the depletion region width, which promote carrier collection and reduce charge loss. As a consequence, the VOC deficit decreases from 0.607 to 0.547 V, and the average FF increases from 64.2% to 69.7%, especially, JSC does not decrease. Thus, the CZTSSe solar cell with the remarkable efficiency of 13.0% is fabricated. This study highlights the increased FF together with VOC simultaneously to promote the efficiency of CZTSSe solar cells, which could also be applied to other photoelectronic devices.
Improvement of grain growth and composition distribution of Cu2ZnSn(S,Se)4 by using chloride-based precursor solution

Yulin Liu,Bin Xu,Xiaoshuang Lu,Xiatong Qin,Pingxiong Yang,Junhao Chu,Ye Chen,Lin Sun

DOI: https://doi.org/10.1016/j.solener.2020.12.067

IF: 7.188

2021-02-01

Solar Energy

Abstract:Excellent crystallinity and uniform composition distribution of the Cu2ZnSn(S,Se)4 (CZTSSe) absorber are indispensable factors for the fabrication of photovoltaic device with excellent performance. Here, a facile and effective method is developed to improve the composition uniformity of CZTSSe absorber. It is inspiring that by replacing the acetates with chlorides as the solutes in the precursor solution, the issue of the composition non-uniformity especially for the distribution of Cu and Sn, which is ascribed to the rich-carbon in the acetate-based CZTSSe absorber, is able to be avoided. Due to less organic residues and composition uniformity, the grain size and the crystallinity of absorber could be significantly enhanced, and the photovoltaic performance of chloride-based CZTSSe solar cell is improved remarkably. Furthermore, substituting CuCl2 with CuCl as the copper source in the precursor solution is able to obtain a stable solution, and the quality of CZTSSe absorber is further improved. As a consequence, 8.48% efficient CZTSSe solar cell has been yield.

energy & fuels
Efficiency Enhancement of CZTSe Solar Cells Based on In-Situ K-doped Precursor

Shengye Tao,Liangzheng Dong,Junsu Han,Yafei Wang,Qianming Gong,Jinquan Wei,Ming Zhao,Daming Zhuang

DOI: https://doi.org/10.1039/d2ta09916k

IF: 11.9

2023-01-01

Journal of Materials Chemistry A

Abstract:High FF: in situ K-doped precursors make large-grain and void-free absorbers. The doping-enhanced Sn diffusion eliminates the local content vibration, suppresses deep level defects, and to higher cell efficiency with greatly improved FF.
Realization of 11.5% Efficiency Cu 2 ZnSn(S,Se) 4 Thin‐Film Solar Cells by Manipulating the Phase Structure of Precursor Films

Bin Xu,Xiatong Qin,Xiaoshuang Lu,Yulin Liu,Ye Chen,Hui Peng,Pingxiong Yang,Junhao Chu,Lin Sun

DOI: https://doi.org/10.1002/solr.202100216

IF: 9.1726

2021-07-14

Solar RRL

Abstract:Cu2ZnSn(S,Se)4 has been widely concerned as a promising thin-film solar cell material. In recent years, the development of Cu2ZnSn(S,Se)4 solar cells has encountered a bottleneck, and the higher open-circuit voltage deficit mainly caused by the secondary phase, CZTSSe/CdS interface recombination, deep-level defects and band-tailing effects, has been an outstanding issue. Herein, the influence of the composition and phase distribution of the precursor thin film on the defect and performance of Cu2ZnSn(S,Se)4 solar cells was studied. By modifying the distribution of composition and phase for precursor films, the Cu2ZnSn(S,Se)4 absorber layer without secondary phase and with fewer detrimental defects can obtained from the pure-phase precursor film. Thanks to the reduction of the band-tailing effects, the increase of the depletion width for heterojunction and the decrease of CZTSSe/CdS interface recombination, the photovoltaic performance of CZTSSe thin film solar cells has been significantly improved. Finally, based on the excellent kesterite absorber layer, we prepared a Cu2ZnSn(S,Se)4 solar cell with 11.51% power conversion efficiency (the active area efficiency is 12.4%).This article is protected by copyright. All rights reserved.

energy & fuels,materials science, multidisciplinary
Controlling Solid-Gas Reactions at Nanoscale for Enhanced Thin Film Morphologies and Device Performances in Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells

Chengyang Jiang,Yao-Tsung Hsieh,Hongxiang Zhao,Huanping Zhou,Yang Yang

DOI: https://doi.org/10.1021/jacs.5b05819

2015-09-02

Abstract:Using Cu2ZnSn(S,Se)4 (CZTSSe) as a model system, we demonstrate the kinetic control of solid-gas reactions at nanoscale by manipulating the surface chemistry of both sol-gel nanoparticles (NPs) and colloidal nanocrystals (NCs). Specifically, we first identify that thiourea (commonly used as sulfur source in sol-gel processes for metal sulfides) can transform into melamine upon film formation, which serves as surface ligands for as-formed Cu2ZnSnS4 (CZTS) NPs. We further reveal that the presence of these surface ligands can significantly affect the outcome of the solid-gas reactions, which enables us to effectively control the selenization process during the fabrication of CZTSSe solar cells and achieve optimal film morphologies (continuous large grains) by fine-tuning the amount of surface ligands used. Such enhancement leads to better light absorption and allows us to achieve 6.5% efficiency from CZTSSe solar cells processed via a sol-gel process using nontoxic, low boiling point mixed solvents. We believe our discovery that the ligand of particulate precursors can significantly affect solid-gas reactions is universal to solid-state chemistry and will boost further research in both understanding the fundamentals of solid-state reactions at nanoscale and taking advantage of these reactions to fabricate crystalline thin film semiconductors with better morphologies and performances.
Above 10% efficient electrodeposited Cu2ZnSn(S,Se)4 solar cell achieved by modifying precursor

Xiatong Qin,Bin Xu,Jianjun Lin,Jiaqi Chen,Hanyu Tong,Ye Chen,Pingxiong Yang,Junhao Chu,Lin Sun,Xiatong Qin,Bin Xu,Jianjun Lin,Jiaqi Chen,Hanyu Tong,Ye Chen,Pingxiong Yang,Junhao Chu,Lin Sun

DOI: https://doi.org/10.1016/j.solmat.2022.111781

IF: 6.9

2022-08-01

Solar Energy Materials and Solar Cells

Abstract:Electrodeposition is a promising method to fabricate Cu2ZnSn(S,Se)4 (i.e., CZTSSe) absorber layer thanks to its many advantages such as low-cost and large-scale. However, the secondary phases and intrinsic defects in electrodeposited CZTSSe solar cells inevitably limit the photoelectric performance. Herein, two different kind of precursor films (binary-ternary selenide vs. quaternary selenide) are deliberately fabricated and the effect of these precursors on the secondary phases and intrinsic defects of CZTSSe absorber layer are investigated comprehensively. The absorber layer obtained from binary-ternary selenide precursor has a small amount of ZnSe secondary phases and CuSn deep defects, whereas that obtained from the quaternary selenide precursor exhibits the favorable VCu shallow defects, which is beneficial to the efficiency improvement in CZTSSe. Based on the quaternary selenide precursor film, the CZTSSe solar cell with 10.03% total area efficiency (the active area efficiency is 10.9%) was obtained. This is the highest efficiency of CZTSSe solar cells prepared by the electrodeposition method.

materials science, multidisciplinary,physics, applied,energy & fuels
Using Cu–Zn–Sn–O Precursor to Optimize CZTSSe Thin Films Fabricated by Se Doping With CZTS Thin Films

Qian Li,Jinpeng Hu,Yaru Cui,Juan Wang,Yu Hao,Tong Shen,Lizhen Duan

DOI: https://doi.org/10.3389/fchem.2021.621549

IF: 5.5

2021-04-16

Frontiers in Chemistry

Abstract:The copper–zinc–tin oxide (CZTO) precursor was synthesized to avoid sudden volume expansion from CZTO precursor to Cu 2 ZnSnS 4 (CZTS) thin films and smooth CZTSSe thin-film surfaces without pinholes. The CZTO precursor was prepared by coprecipitation and ball milling to form nanoink of CZTO. Based on the CZTO precursor, the CZTS thin film was fabricated and then selenized to make pinhole-free and flat Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin films. The results show that the CZTO precursor greatly contributed to elevating the homologous surface characteristics and crystallinity of CZTSSe thin films by controlling selenium temperature, selenium time, and selenium source temperature. Finally, the conversion efficiency of the CZTSSe thin-film solar cell fabricated from the CZTO precursor was 4.11%, with an open-circuit voltage (Voc) of 623 mV, a short circuit current density (Jsc) of 16.02 mA cm −2 , and a fill factor (FF) of 41.2%.

chemistry, multidisciplinary
CZTS nanocrystals: a promising approach for next generation thin film photovoltaics

huanping zhou,wanching hsu,hsinsheng duan,brion bob,wenbing yang,tzebin song,chiajung hsu,yang yang

DOI: https://doi.org/10.1039/c3ee41627e

IF: 32.5

2013-01-01

Energy & Environmental Science

Abstract:Cu2ZnSn(S,Se)(4) (CZTSSe) has received considerable attention as a material capable of driving the development of low-cost and high performance photovoltaics. Its high absorption coefficient, optimal band gap, and non-toxic, naturally abundant elemental constituents give it a number of advantages over most thin film absorber materials. In this manuscript, we discuss the current status of CZTSSe photovoltaics, and provide a comprehensive review of Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) nanocrystal (NCs)-based fabrication methods and solar cell characteristics. The focus will be on the relevant synthetic chemistry, film deposition, and the production of high efficiency photovoltaic devices. Various colloidal synthesis routes are currently used to form the highest quality CZTSSe film from the nanocrystals with controllable phase, size, shape, composition, and surface ligands. A variety of recipes are summarized for producing nanocrystal inks that are appropriate for forming CZTSSe absorber materials with a wide range of controllable optoelectronic properties. Deposition and post-processing, such as annealing and selenization treatments, play an important role in defining the phase and structure of the resulting material. Various film treatment strategies are outlined here, and their resulting material quality, device performance, and dominant photovoltaic loss mechanisms are discussed. Suggestions regarding needed improvements and future research directions are provided based on the current field of available literature.
Facile single-component precursor for Cu2ZnSnS4 with enhanced phase and composition controllability

huanping zhou,hsinsheng duan,wenbing yang,qi chen,chiajung hsu,wanching hsu,chunchao chen,yang yang

DOI: https://doi.org/10.1039/c3ee43101k

IF: 32.5

2014-01-01

Energy & Environmental Science

Abstract:A simple and effective method has been demonstrated using soluble single-component precursors to achieve high quality Cu2ZnSnS4 (CZTS) thin films with enhanced phase and composition controllability. The soluble single-component precursors were composed of Cu2-xS colloidal nanocrystals (NC) and the homogeneously distributed Zn-Sn species on the surface. Zn species is presented as the surface ligand for the first time, in the form of Zn-Sn complex, providing both the colloidal stabilization and the essential components for CZTS. CZTS film composition is governed by the prescribed stoichiometry between Cu2-xS nanoparticles and the Zn-Sn complex in solution. This novel reaction process enables a favorable CZTS phase progression, with less than 175 degrees C formation temperature, and a minimized secondary phase growth mode, due to its local composition uniformity in both liquid and film state. Compared with the approaches based on molecular precursor or quarternary CZTS nanocrystals, the single-component precursor allows fine tuning of the kesterite materials for future advanced optoelectronics.
Non‐Hydrazine Solutions in Processing CuIn(S,Se)2 Photovoltaic Devices from Hydrazinium Precursors

Huanping Zhou,Chia-Jung Hsu,Wan-Ching Hsu,Hsin-Sheng Duan,Choong-Heui Chung,Wenbing Yang,Yang

DOI: https://doi.org/10.1002/aenm.201200691

IF: 27.8

2013-01-01

Advanced Energy Materials

Abstract:We report an approach for the fabrication of CuIn(S,Se)2‐based photovoltaic devices from hydrazinium precursors in non‐hydrazine solvents, specifically a ethanolamine/dimethyl sulfoxide (EA/DMSO) mixture. For the first time, both Cu hydrazinium precursor and Cu‐In hydrazinium precursor are found with good solubility in non‐hydrazine solvents, producing molecular‐level blending of metal precursors. Sulfur loss in Cu hydrazinium precursor is compensated for by either introduction of excessive S/Se or the formation of S/Se‐bridged Cu‐In compounds. The success of dissolving Cu‐In hydrazinium precursor is ascribed to the coordinated S group and strong intramolecular interaction within non‐hydrazine solvents. X‐ray diffraction (XRD) and Raman characterization indicate the formation of the CuIn(S,Se)2 phase after annealing. Through introducing different amounts of excess S/Se, the ratio between CuInS2 and CuInSe2, as well as the morphology of the resulted CuIn(S,Se)2 film can be controlled. Optimized devices exhibit a power conversion efficiency of 3.8% with a CISS absorber layer of only around 300 nm thickness, which is comparable to N2H4‐based devices of similar thickness.
Benign solution processed Cu2ZnSn(Se, S)4 photovoltaic

Chia-Jung Hsu,Hsin-Sheng Duan,Wenbing Yang,Huanping Zhou

DOI: https://doi.org/10.1109/PVSC.2013.6744986

2013-01-01

Abstract:Solution-based approach to process earth-abundant Cu2ZnSn(Se, S)4 is proved to be a promising route for thin-film photovoltaic fabrication. Combining fully dissolved zinc/tin (Zn/Sn) and copper (Cu) hydrazinuim constituents in the ethanolamine (EA) and its mixture with dimethylsulfoxide (DMSO) forms the CZTS precursor, which facilitates the composition adjustment. All solutes in this precursor solution are in molecular scale intermixed with excellent homogeneity. Innovated 2-step annealing using sulfur and selenium vapor sequentially assists continuous grain growth, and prevents Mo(S, Se)2 formation. Resulting device achieves 7.5% power conversion efficiency.
Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

Guoan Ren,Daming Zhuang,Ming Zhao,Yaowei Wei,Yixuan Wu,Xinchen Li,Xunyan Lyu,Chen Wang,Yuxian Li

DOI: https://doi.org/10.1016/j.jpowsour.2020.228747

IF: 9.2

2020-12-01

Journal of Power Sources

Abstract:The large band tailing states are believed to be a key challenge resulting in large deficit of open-circuit voltage and limit the performances of promising Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. In the study, an effective process is proposed to alleviate the harmful effects of band tailing states and fabricate high performance CZTSSe devices. Cu2ZnSnS4 (CZTS) precursors are sputtered by a CZTS quaternary target and then annealed under a H2Se-containing atmosphere at different temperatures. The phase transformation and grain growth of CZTSSe absorbers in selenization process is illustrated. At the annealing temperature of 500 °C, the best performance device with the efficiency of 11.83% is achieved. The excellent back contact interface and the slight band tailing effect of the champion device are demonstrated by the temperature-dependent J-V and external quantum efficiency (EQE) measurement. The photoluminescence (PL) spectrum illustrates that the donor–acceptor pair formed by charged defects is the dominant reason of band tailing effect.

energy & fuels,materials science, multidisciplinary,electrochemistry,chemistry, physical
Preparation And Characterization Of Cu2znsns4 Thin Films And Solar Cells Fabricated From Quaternary Cu-Zn-Sn-S Target

min xie,daming zhuang,ming zhao,zuolong zhuang,liangqi ouyang,xiaolong li,jun song

DOI: https://doi.org/10.1155/2013/929454

2013-01-01

International Journal of Photoenergy

Abstract:CZTS thin films were fabricated through sputtering from a quaternary Cu-Zn-Sn-S target, followed by a sulfurization process. CZTS thin-film solar cells were also fabricated and a highest efficiency of 4.04% was achieved. It has been found that obvious Zn loss occurs during the sputtering and poorly crystallized CZTS are formed in the sputtered films. The Zn loss leads to the appearance of SnS. A sulfurization process can obviously improve the crystallinity of CZTS and films with grain size of several hundred nanometers can be obtained after sulfurization. The optical band gap of the films is estimated to be 1.57 eV. The electrical properties of the 4.04% efficient solar cell were investigated and it has been found that cell has obvious deficiency in minority carrier lifetime. This deficiency should be responsible for the low J(sc) and low V-oc of our cell.
Synergistic Crystallization Modulation and Defects Passivation in Kesterite via Anion-Coordinate Precursor Engineering for Efficient Solar Cells

Lijing Wang,Liangli Chu,Zhengji Zhou,Wenhui Zhou,Dongxing Kou,Yuena Meng,Yafang Qi,Shengjie Yuan,Litao Han,Gang Yang,Zhuhua Zhang,Zhi Zheng,Sixin Wu

DOI: https://doi.org/10.1002/advs.202405016

Abstract:It has been validated that enhancing crystallinity and passivating the deep-level defect are critical for improving the device performance of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Coordination chemistry interactions within the Cu-Zn-Sn-S precursor solution play a crucial role in the management of structural defects and the crystallization kinetics of CZTSSe thin films. Therefore, regulating the coordination environment of anion and cation in the precursor solution to control the formation process of precursor films is a major challenge at present. Herein, a synergetic crystallization modulation and defect passivation method is developed using P2S5 as an additive in the CZTS precursor solution to optimize the coordination structure and improve the crystallization process. The alignment of theoretical assessments with experimental observations confirms the ability of the P2S5 molecule to coordinate with the metal cation sites of CZTS precursor films, especially more liable to the Zn2+, effectively passivating the Zn-related defects, thereby significantly reducing the defect density in CZTSSe absorbers. As a result, the device with a power conversion efficiency of 14.36% has been achieved. This work provides an unprecedented strategy for fabricating high-quality thin films by anion-coordinate regulation and a novel route for realizing efficient CZTSSe solar cells.
Facile synthesis of Cu2ZnSnS4 nanocrystals and its use for dye-sensitized solar cells applications

Lixia Li,BinLei Zhang,Meng Cao,Yan Sun,Jiang Jiang,P. F. Hu,Yue Shen,Linjun Wang

DOI: https://doi.org/10.1016/j.jallcom.2012.10.068

IF: 6.2

2013-01-01

Journal of Alloys and Compounds

Abstract:Cu2ZnSnS4 (CZTS) nanocrystals were synthesized with a simple solution method. The effects of the amount of oleylamine, the quantity of zinc salt precursor and reaction time on the structure, composition, morphology and optical properties of the nanocrystals were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray analysis (EDX) measurements. The zinc content in the nanocrystals increases with the increasing of the amount of oleylamine and the quantity of ZnCl2 precursor. But the particle sizes were influenced mainly by the reaction time. For dye-sensitized solar cells (DSSCs) using CZTS nanocrystals as the dye layer, the JSC was greatly decreased with the increasing of the sizes of the nanocrystals. Synthesis of small and uniformly dispersed CZTS nanocrystals was beneficial to enhance the power conversion efficiency of the DSSCs. © 2012 Elsevier B.V. All rights reserved.

Toward High Performance Cu2ZnSn(S,Se)4 Solar Cells Through Nanocrystal Precursors

Spatial Element Distribution Control in a Fully Solution-Processed Nanocrystals-Based 8.6% Cu 2 ZnSn(S,Se) 4 Device

Se as hetero-nucleation seeds reinforcing intermetallic diffusion for improved electrodeposition-processed CZTS solar cells

Rational Defect Passivation of Cu2ZnSn(S,Se)4 Photovoltaics with Solution-Processed Cu2ZnSnS4:Na Nanocrystals.

Novel solution processing of high-efficiency Earth-abundant Cu2 ZnSn(S,Se)4 solar cells.

Benign Solutions and Innovative Sequential Annealing Processes for High Performance Cu2ZnSn(Se,S)4 Photovoltaics

Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Improvement of grain growth and composition distribution of Cu2ZnSn(S,Se)4 by using chloride-based precursor solution

Efficiency Enhancement of CZTSe Solar Cells Based on In-Situ K-doped Precursor

Realization of 11.5% Efficiency Cu 2 ZnSn(S,Se) 4 Thin‐Film Solar Cells by Manipulating the Phase Structure of Precursor Films

Controlling Solid-Gas Reactions at Nanoscale for Enhanced Thin Film Morphologies and Device Performances in Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells

Above 10% efficient electrodeposited Cu2ZnSn(S,Se)4 solar cell achieved by modifying precursor

Using Cu–Zn–Sn–O Precursor to Optimize CZTSSe Thin Films Fabricated by Se Doping With CZTS Thin Films

CZTS nanocrystals: a promising approach for next generation thin film photovoltaics

Facile single-component precursor for Cu2ZnSnS4 with enhanced phase and composition controllability

Non‐Hydrazine Solutions in Processing CuIn(S,Se)2 Photovoltaic Devices from Hydrazinium Precursors

Benign solution processed Cu2ZnSn(Se, S)4 photovoltaic

Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

Preparation And Characterization Of Cu2znsns4 Thin Films And Solar Cells Fabricated From Quaternary Cu-Zn-Sn-S Target

Synergistic Crystallization Modulation and Defects Passivation in Kesterite via Anion-Coordinate Precursor Engineering for Efficient Solar Cells

Facile synthesis of Cu2ZnSnS4 nanocrystals and its use for dye-sensitized solar cells applications