Abstract:The tetraethyl orthosilicate is introduced into CZTSSe precursor solution as a source of silicon to partially substitute Sn with Si for fabrication of CZTSSe device, giving rise to favorable functions in terms of passivating SnZn defects and optimizing energy level alignment. Consequently, the CZTSSe device with 7% Si substitution acquires a PCE of 13.02% due to the enhancement of Voc. The SnZn defect passivation and heterojunction interface energetics‐modification are crucial for further improvement of open‐circuit voltage (Voc) and efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Herein, a simple but effective cation substitution strategy is reported to promote the performance of CZTSSe devices by simultaneously modifying the absorber and heterojunction interface. This is achieved by introducing the organic silicon salt C8H20O4Si into CZTSSe precursor solution as a source of silicon to partially substitute Sn with Si. Systematic studies reveal that there are two mechanisms synergistically contributing to the increase of efficiency: 1) This strategy can passivate the undesired SnZn defect in CZTSSe absorber more efficiently, leading to at least one order of magnitude lower SnZn defect density and beneficial carrier transport properties; 2) After Si incorporation, the conduction band minimum of the CZTSSe is upshifted, thus enlarging the bandgap, which ultimately optimizes the energy level structure at the CdS/CZTSSe interface and reduces interfacial energy loss by decreasing the carrier transport barrier. Consequently, the CZTSSe device with 7% Si substitution delivers a satisfactory efficiency of 13.02% owing to an increase in Voc. It is hoped the Si substitution strategy reported here can provide inspiration for developing advanced CZTSSe devices with broad application prospects.

Efficiency Enhancement of CZTSe Solar Cells Based on In-Situ K-doped Precursor

Crystallization mechanism and defect passivation of Cu2ZnSn(S,Se)4 thin film solar cells via in situ potassium doping

Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Defect Engineering in Earth‐Abundant Cu2ZnSn(S,Se)4 Photovoltaic Materials Via Ga3+‐Doping for over 12% Efficient Solar Cells

Passivation of Grain Boundaries and Defects in CZTSSe Solar Cells by In Situ Na Doping

Enhancement of power conversion efficiency of Ag-substituted Cu2ZnSn(S,Se)4 solar cells via tuning Cu2+/(Cu++Cu2+) percentage in precursor solution

Synergistic Crystallization Modulation and Defects Passivation in Kesterite via Anion-Coordinate Precursor Engineering for Efficient Solar Cells

Passivating SnZn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells

In-doping collaboratively controlling back interface and bulk defects to achieve efficient flexible CZTSSe solar cells

Improvement of grain growth and composition distribution of Cu2ZnSn(S,Se)4 by using chloride-based precursor solution

High Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells with Shallow Li Zn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

High Efficiency Cu2ZnSn(S,Se)4 Solar Cells with Shallow LiZn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

Suppressing Element Inhomogeneity Enables 14.9% Efficiency CZTSSe Solar Cells

CZTSSe solar cell with an efficiency of 10.19% based on absorbers with homogeneous composition and structure using a novel two-step annealing process

The enhancement of CZTSSe solar cell performance through active construction of the double-layer absorber

Mechanism of enhanced power conversion efficiency of Cu2ZnSn(S, Se)4 solar cell by cadmium surface diffusion doping

Optimizing the properties of Cu2ZnSn(S,Se)4 solar cells via cationic substitution with trace Ca

Efficiency Enhancement of Cu2ZnSn(S,Se)4 Solar Cells via Alkali Metals Doping

Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells

Using Cu–Zn–Sn–O Precursor to Optimize CZTSSe Thin Films Fabricated by Se Doping With CZTS Thin Films

Above 10% efficient electrodeposited Cu2ZnSn(S,Se)4 solar cell achieved by modifying precursor