Atmospheric Pressure Chemical Vapor Deposition of SnO[sub 2]: Processing and Properties

A Al-Kaoud,T Wen,A Gilmore,V Kaydanov,TR Ohno,C Wolden,L Feng,J Xi
DOI: https://doi.org/10.1063/1.57968
1999-01-01
AIP Conference Proceedings
Abstract:SnO2:F films produced by: continuous APCVD from tin tetrachloride are an attractive candidate in the choice of the most appropriate materials of thin film solar cells. The purpose of developing this technology is to fabricate excellent SnO2 films while maintaining its advantages of targe-scale manufacture and low cost. Among others, it is important to design an injector that is able to provide a stable reactant gas now with uniform distribution in speed, composition and temperature. Hall measurement, Seebeck coefficient and ellipsometry measurements are used to provide the carrier concentration, mobility and other information about the properties of the films. The characterization shows that the main properties of the films deposited by continuous APCVD are close to or better than that of the commercial products fabricated by other technologies Finally, the different measurements are discussed.
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