Abstract:SnO2 has the advantages of excellent photostability and can be prepared under low-temperature below 200°C. It is regarded as one of the excellent materials for the electron transport layer, and it is widely used in efficient and stable planar heterojunction perovskite solar cells. In this paper, the low-cost, dense and uniform SnO2 electron transport layer is prepared by spin coating at low temperature (150°C) for perovskite solar cells with a structure of FTO / SnO2 / CH3NH3PbI3 (MAPbI3) / Spiro-OMeTAD / Au. The crystallization and photoelectric properties of SnO2 electron transport layers prepared at different concentrations (2.5~10wt%) at 150°C, and the influence of SnO2 electron transport layers on the formation of perovskite films and the performance of perovskite solar cells are discussed. By analyzing the scanning electron microscope (SEM), ultraviolet-visible light absorption spectrum (UV-Vis) and transmission spectrum of the SnO2 film, it is found that the coverage and light transmittance of the substrate and band gap of the SnO2 film will increase as the SnO2 content increase, while the absorbance decreases. By analyzing the SEM, UV-Vis, X-ray diffraction (XRD) and steady-state photoluminescence spectrum (PL) analysis of the SnO2 / MAPbI3 thin film, it is found that the MAPbI3 deposited on the SnO2 layer with concentration of 7.5wt% is uniform and pinhole-free, has the largest particle size and the best crystallinity, as well as more effective charge extraction and transport capabilities. By analyzing the electrochemical impedance (EIS) and external quantum efficiency (EQE) of the device, the SnO2 electron transport layer with a concentration of 7.5wt% has better interface contact and lower interface resistance, which is beneficial to reduce the recombination of carriers and improve the photoelectric conversion ability, The perovskite solar cells based on SnO2 layer prepared with concentration of 7.5wt% obtained the photoelectric conversion efficiency of 15.82% (Voc=1.06V, Jsc=21.62mA/cm2, FF=69.40%), After storing for 600 h in ambient air (25±5°C, RH70%) without encapsulation, it still maintains 92% of the initial efficiency. At the same time, we tried to prepare flexible devices on flexible substrates (TIO/PEN) using SnO2 precursor with a concentration of 7.5wt%, which exhibited good photovoltaic performance and obtained the photoelectric conversion efficiency of 13.12%, and storing for 84 d in ambient air (30±5°C, RH70%) without encapsulation, it still maintains 48% of the initial efficiency. The PCE retains 78% of the initial value after 1000 bending cycles with a bending radii of 3 mm. The study of optimizing the concentration of SnO2 has laid a foundation for improving the performance of flexible perovskite solar cells.

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