Low‐Cost Tin Oxide Transparent Conductive Films for Silicon Heterojunction Solar Cells

Jiacheng Guo,Shuhan Li,Yuhan Cui,Yurong Zhou,Wanwu Guo,Yan Hu,Yansi Xing,Yuqin Zhou,Fengzhen Liu

DOI: https://doi.org/10.1002/adfm.202407273

IF: 19

2024-08-27

Advanced Functional Materials

Abstract:Low‐cost SnO2 films are deposited by RPD with metal tin as the evaporation source, which features low resistivity (<2 × 10−3 Ω cm) and high mobility (35.93 cm2 V−1 S−1). A power conversion efficiency of 25.33% is achieved on the SHJ solar cell with the SnO2 film as a TCO layer. Indium‐based transparent conductive oxide (TCO) films are widely used in various photoelectric devices including silicon heterojunction (SHJ) solar cells. However, high cost of indium‐based TCO films is not conducive to mass production of the SHJ solar cells. A variety of indium‐free or indium‐less TCOs are explored and utilized presently. Here, SnOx films are deposited by reactive plasma deposition (RPD) with metal tin as the evaporation source. The metal‐reaction deposited SnOx films feature low resistivity (<2 × 10−3 Ω cm), high mobility (35.93 cm2 V−1 S−1), and wide optical bandgap (3.64 eV). A power conversion efficiency (PCE) of 25.33% is achieved on the champion SHJ solar cell using the metal‐reaction deposited SnOx as the back TCO layer, which indicates the application potential of the metal‐reaction‐deposited SnOx as a low‐cost substitute for In‐based TCOs in SHJ solar cells and other photoelectric devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology