Recent Development of Low-Voltage Reactive-Ion-plating Deposition of Optical Thin Films in China

LY HAN,JC GAO,JC WANG

DOI: https://doi.org/10.1117/12.144124

1993-01-01

Abstract:Various optical thin films of metal oxides and ITO have been deposited by low voltage reactive ion plating technique. Analysis of the resulting thin films shows that their microstructures are evidently improved.

What problem does this paper attempt to address?

Study on the optical thin film deposited by plasma ion plating

Xu Liu,Bin Wang,Peifu Gu,Jinfa Tang

1995-01-01

Abstract:A low-voltage plasma-ion-plating equipment was set up here based on the actions of plasma on the atoms or molecules of the evaporated materials during the film deposition, and a systematic research was carried out on both the conventional optical thin film materials (such as the sulphide, oxides) and the multilayer thin-film devices by using this equipment. The spectral transmittance, absorption, scattering and the packing density of the films were measured and analyzed. The experimental results show that this low-voltage plasma-ion-plating equipment can significantly improve both the optical and mechanical performances of the thin film deposited.
Optical-Electric Thin Films Produced By Low Voltage Reactive Plasma Assisted Deposition

X Liu,B Wang,Pf Gu,Jf Tang

DOI: https://doi.org/10.1117/12.192171

1994-01-01

Abstract:Low voltage reactive plasma assisted deposition (RPAD) is used here, to deposit the optical- electric films, such as transparent conductive thin films and Si3N4 films. Comparing to other thermal evaporation techniques, RPAD can produce more easily such kind of opto- electric thin films. Experimental results of the films deposited will be presented in this paper.
Some Oxide-Films Deposited By Reactive Low-Voltage Plasma-Assisted Evaporation

xu liu,bin wang,gan wang,peifu gu,jinfa tang

DOI: https://doi.org/10.1117/12.163657

1993-01-01

Abstract:Low voltage plasma assisted evaporation (PAE) technique has been investigated as an effective evaporation technique for the deposition of oxide films of high optical performance. The PAE process consists of an electron beam evaporator and a large current plasma source. The guided wave method is used to measure the refractive index and attenuation coefficients of guided modes of some oxide films deposited by PEA. The experimental systems and results are presented.
Atomic Layer Deposition and Its Applications in Optical Thin Films

Junpeng He,ZhangYueguang,Weidong Shen,Xu Liu,Peifu Cu

DOI: https://doi.org/10.13922/j.cnki.cjovst.2009.02.005

2009-01-01

Abstract:The latest progress of atomic layer deposition (ALD) technology for optical coating was tentatively reviewed. First, the film growth conditions, including deposition rate, pressure and substrate temperature were compared with those of the conventional techniques. Besides, the advantages of the ALD technique, including good uniformity and high stability of the film, and easy control of the film thickness were introduced. Next, the influence of the precursors, especially for oxide films, on microstructures and optical properties was discussed. Finally, the strengths and weaknesses of the filters made of ALD films, including antireflection coating(AR), variable refractive index films, laser resistant coatings and ultraviolet (UV) blocking filters were discussed.
Low Resistivity Transparent Conducting CdO Thin Films Deposited by DC Reactive Magnetron Sputtering at Room Temperature

Qiang Zhou,Zhenguo Ji,BinBin Hu,Chen,Lina Zhao,Chao Wang

DOI: https://doi.org/10.1016/j.matlet.2006.05.004

IF: 3

2006-01-01

Materials Letters

Abstract:Transparent conducting cadmium oxide (CdO) films were deposited on PET (polyethylene terephthalate) substrate by DC reactive magnetron sputtering at room temperature. All the films deposited at room temperature were polycrystalline in rock-salt structure. Dependences of the physical properties of the CdO films on the oxygen partial pressure were systematically studied. The films deposited at low oxygen flow rate were (200) oriented, while the films deposited at an oxygen flow rate greater than 20 sccm were (111) oriented. The average grain size of the CdO films decreased as the oxygen flow rate increases as determined by XRD and SEM. The Hall effect measurement showed that CdO films have high concentration, low resistivity, and high mobility. Both the mobility and the concentration of the carrier decreased with the increase of the oxygen flow rate. A minimum sheet resistance of 36.1 Omega/rectangle, or a lowest resistivity of 5.44 x 10(-4) Omega cm (6.21 X 10(20)/cm(3), mu = 19.2 cm(2)/Vs) was obtained for films deposited at an oxygen flow rate of 10 sccm. (c) 2006 Elsevier B.V. All rights reserved.
Advances in Research on Deposition Techniques for ZnO Thin Films

汪雷

DOI: https://doi.org/10.3321/j.issn:1005-023x.2002.09.012

2002-01-01

Abstract:Zinc oxide is a novel material for Ⅱ-Ⅵ semiconductor.A number of deposition techniques for ZnO thin films are now available,such as magnetron sputtering,spray pyrolysis,molecular beam epitaxy,pulsed laser deposition,metal-organic chemical vapor deposition and some novel growth technologies,including sol-gel,atomic layer epitaxy,chemical bath deposition,ion beam assisted deposition,successive ion layer adsorption and reactions,film oxidation,and so on.In this work,advances in research on deposition techniques for ZnO thin films are reviewed in detail.
Study on optical coatings by reactive ion plating

Jiancheng Wang,Liying Han,Jiancun Gao

1994-01-01

Abstract:Reactive ion plating deposition is a new optical coating technique. The principle and process of deposition were discussed. The development of the equipment for this technique was introduced TiO2, ZrO2, SiO2, Al2O3 optical coatings were prepared using the developed equipment. The measurement results show that their refractive indexes are obviously higher as compared with those prepared by conventional technology. The measured refractive index of TiO2 is 2.57, approximates to that of the bulk material. The composition and valence state of TiO2 and SiO2 single layer coating were identified by X-ray photoelectron spectrum analysis.
Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Yanping Xia,Peihong Wang,Shiwei Shi,Miao Zhang,Gang He,Jianguo Lv,Zhaoqi Sun

DOI: https://doi.org/10.1016/j.ceramint.2016.12.106

IF: 5.532

2016-01-01

Ceramics International

Abstract:Al-doped zinc oxide (AZO) thin films were deposited onto flexible ultra-thin glass substrates by using a direct current (DC) magnetron sputtering process. The effects of sputtering power, working pressure and substrate temperature on the morphology and optoelectronic performances of AZO films were investigated. The optimal sputtering power, working pressure and substrate temperature for AZO film were determined to be 100W, 0.9Pa and 150℃, respectively. Further increasing or decreasing the sputtering power, working pressure and substrate temperature degrades the quality of AZO films. XRD patterns show all as-sputtered AZO thin films are preferred to grow along <0002> direction. Moreover, the largest grain size, which depicts the best microstructure of AZO films, matches with the smallest stress value. It can be seen from SEM images that the surface is smooth and dense. The smallest value of the resistivity is 1.784×10−3Ωcm and the average transmittance of all AZO films in the visible range is about 80%. The X-ray photoelectron spectroscopy spectra show that the amount of Al element in the AZO film is very small.
Low Voltage Ion Plating Technique for the Deposition of ZnS, MgF2 Films

X. Liu,Y.F. Zhen,Y. Zhang,P.F. Gu,J.F. Tang

DOI: https://doi.org/10.1364/oic.1992.otha6

1992-01-01

Abstract:Low voltage ion plating technique has become more and more interest in the deposition of thin films with very high packing density and good adhersion properties. Current works in the world are concerned mainly on the films of oxides [1], [2], the films were prepared by evaporating correspondent metals or suboxides materials in a plasma cloud, and with a reaction of oxygen ions to form a correct stoichiometric oxide films.
Recent Status of Optical Coating Technology and Application in China

FX Gan

DOI: https://doi.org/10.1016/j.tsf.2005.07.225

IF: 2.1

2006-01-01

Thin Solid Films

Abstract:In this paper the development of optical coatings on glass and plastics in China has been reviewed. The emphases are laid on industrial applications in China, such as optical coatings on sheet glasses for architectural applications, ophthalmic coatings on glass and plastic lenses, various optical coatings for optical and magnetic data storage disks, and also for optoelectronic components in optical communication and panel displays. The Chinese market development trends of mentioned above applications are discussed.
Superior Texture-Controlled Zno Thin Film Using Electrochemical Deposition

Xiaodong Ren,Wenping Dang,Qiang Ma,Xuejie Zhu,Wei Zi,Lujian Jia,Bin Liu,Xisheng Zhang,Fengwei Xiao,Heqing Yang,Zhou Yang,Shengzhong (Frank) Liu

DOI: https://doi.org/10.1016/j.solener.2015.12.018

IF: 7.188

2016-01-01

Solar Energy

Abstract:Superior texture-controlled ZnO thin film is prepared using a low cost electrochemical deposition process at open atmospheric condition. FE-SEM shows that the surface morphology can be altered from nanorods to microplates by adding a chemical additive. XRD analysis confirms that the crystalline growth direction and texture can be controlled by changing the additive concentration during the deposition. Using the optimized ZnO based back reflector (BR) in single junction a-SiGe:H solar cell device, we have achieved external quantum efficiency (EQE) as high as 87% at similar to 550 nm; the EQE corrected short circuit current density (J(SC)) was 20.63 mA cm(-2) and solar cell efficiency was 7.73% for the single junction a-SiGe:H solar cell. It proves to us that the high quality ZnO thin films can be produced at much reduced cost using electrochemical deposition for solar cell and other optoelectronic applications. (C) 2015 Elsevier Ltd. All rights reserved.
Atomic Layer Deposition of Metal Oxide Films

LU Hong-Liang,XU Min,ZHANG Jian-yun,CHEN Wei,REN Jie,ZHANG Wei,WANG Ji-tao

DOI: https://doi.org/10.3321/j.issn:1001-9731.2005.06.002

2005-01-01

Journal of Functional Biomaterials

Abstract:Atomic layer deposition (ALD) is a new method for preparing films,which has the ability to control film thickness and composition accurately.Because films are deposited layer by layer,ALD has a lot of advantages,such as large area uniformity,excellent conformality.We review the mechanism and application of ALD to deposit metal oxide films in this paper.It has been noticed that ALD has more and more important potential application in high-k materials for MOSFET gate dielectrics.
Structural, optical and electrical properties of ZnO thin films prepared by reactive deposition

Ji Zhenguo,Liu Kun,Yang Chengxing,Fan Ruixin,Ye Zhizhen

DOI: https://doi.org/10.1016/S0022-0248(03)01005-4

IF: 1.8

2003-01-01

Journal of Crystal Growth

Abstract:Highly c-axis oriented crystalline ZnO thin films were prepared on glass substrates by reactive deposition using zinc acetate as the zinc source. The structural, optical, and electrical properties of the ZnO samples were investigated using XRD, UV–Vis absorption and Hall-effect measurements. The dependences of the film properties on the substrate temperature and the source temperature were studied, and the optimal parameters were obtained. Factors that affect the carrier mobility were also analyzed.
Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Ming-Jie Zhao,Zhi-Xuan Zhang,Chia-Hsun Hsu,Xiao-Ying Zhang,Wan-Yu Wu,Shui-Yang Lien,Wen-Zhang Zhu

DOI: https://doi.org/10.3390/nano11040978

IF: 5.3

2021-04-10

Nanomaterials

Abstract:Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Two-regime property dependence on plasma power of plasma-enhanced atomic layer-deposited In 2 O 3 thin films and underlying mechanism

Zhi-Xuan Zhang,Ming-Jie Zhao,Wan-Yu Wu,Dong-Sing Wuu,Peng Gao,Shui-Yang Lien,Wen-Zhang Zhu

DOI: https://doi.org/10.1016/j.vacuum.2023.112414

IF: 4

2023-07-28

Vacuum

Abstract:As the dimensions of electron devices are scaling down, the growth of high-quality thin film on high-aspect-ratio substrate conformally is in increasing demand. Atomic layer deposition (ALD) offers a solution for depositing conformal thin film. In this work, indium oxide (In 2 O 3 ) thin film with high electron mobility and wide band gap was prepared by ALD. O 2 plasma was used to enhance the growth rate to a reasonable level, which is difficult to achieved for In 2 O 3 film grown by thermal ALD. The film properties and deposition mechanisms under different plasma power were investigated. A two-regime property dependence on plasma power was observed and explained by a two-reaction-mode mechanism. When deposited with a lower plasma power of 2000–2500 W, the adsorbed In-precursor ligands were not completely oxidized due to the less energetic oxygen radicals, resulting in lower growth rate, lower crystallinity and lower carrier mobility. When deposited with a higher plasma power of 2750–3000 W, the oxygen radicals were energetic enough to completely oxidize the In-precursor ligands, resulting in higher growth rate, higher crystallinity and higher carrier mobility. The results implied that deposition at higher plasma power is beneficial for enhancing the film growth rate and film properties.

materials science, multidisciplinary,physics, applied
Electrochemical Deposition and Characterization of Wide Band Semiconductor ZnO Thin Film

J Weng,YJ Zhang,GQ Han,Y Zhang,L Xu,J Xu,XF Huang,KJ Chen

DOI: https://doi.org/10.1016/j.tsf.2004.09.047

IF: 2.1

2004-01-01

Thin Solid Films

Abstract:ZnO thin film was electrodeposited from an aqueous solution of Zn(NO3)2 at 65 °C on indium tin oxide (ITO)-covered glass substrates. Atomic force microscope and X-ray diffraction studies indicated that the obtained ZnO films were polycrystalline with hexagonal wurtzite-type structure. Various operating conditions were controlled, including the applied voltages, the deposition time and annealing treatment. According to applied conditions, ZnO films presented different morphologies, grain size ranging approximately from 180 to 320 nm. When depositions were carried out at −0.9 and −1.0 V, ZnO films were compact and homogeneous, and their transmittance was close to 95% at the wavelength of 500 nm. The variations in the band gap of ZnO films deposited under different conditions are also discussed.
Atomic layer deposition and other thin film deposition techniques: from principles to film properties

James A. Oke,Tien-Chien Jen

DOI: https://doi.org/10.1016/j.jmrt.2022.10.064

IF: 6.267

2022-11-02

Journal of Materials Research and Technology

Abstract:Thin film is a modern technology aimed at improving the structural, electrical, magnetic, optical, and mechanical properties of bulk materials. This technology has so far found applications in integrated circuits, semiconductor devices, transistors, light-emitting diodes, light crystal displays and photoconductors, rectifiers, solar cells, sensors, and micro-electromechanical systems (MEMS). Methods of thin film deposition such as physical and chemical vapor deposition (PVD and CVD), sputtering, spin and dip coatings, and spray pyrolysis have been utilized for several years. But in recent times, the atomic layer deposition (ALD) technique has attracted the attention of researchers. In this current review, we have explored the most used techniques in the depositions of thin film materials with a focus on the properties of film produced, and the advantages and disadvantages of each technique. Generally, it was observed that the quality of films produced by these techniques depends greatly on the choice of substrate, deposition temperature, temperature window, and precursor used. It concluded by identifying ALD as an optimum technique in depositing ultra-thin film materials due to its simplicity, reproducibility, control over film composition and thickness, and high conformal deposited films at the atomic level. This study has established the opportunity for upcoming researchers to have an insight of selecting the most suitable technique for their study in various fields of research. Finally, the challenges and future perspectives of deposition techniques were highlighted.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films

Liangge Xu,Lili He,Lei Yang,Zhibo Zhang,Shuai Guo,Zhenhuai Yang,Peng Wang,Fangjuan Geng,Gang Gao,Chunqiang Sun,Victor Ralchenko,Jiaqi Zhu

DOI: https://doi.org/10.1016/j.surfcoat.2020.126414

IF: 4.865

2020-12-01

Surface and Coatings Technology

Abstract:<p>The performance of atomic layer deposition films is mainly limited by precursor residues, low crystallinity and densities due to low deposition temperatures. Here, we used atomic layer deposition to deposit tin oxide thin films at a relatively low temperature of 250 °C. At this temperature, the change in the valence of Sn due to precursor residue is eliminated by layer-by-layer Ar plasma treatment, and the crystallinity of the films is improved. The effects of Ar plasma treatment power and Ar treatment time on the structural and optoelectronic properties were investigated. It was found that Ar plasma treatment time more significantly affects the surface morphology and the optical and electrical properties of the film. The film is transparent to both visible and near-infrared light over a wide range of wavelengths from 400 nm to at least 5000 nm. The film resistivity can be as low as 1.117 × 10<sup>−3</sup> Ω·cm. The film has a relatively low level of residual stress due to the fact that there is no need to improve the crystallinity of the film by conventional high temperature annealing. On the basis of the high transparency and high conductivity of the SnOx films with layer by layer Ar plasma treatment in situ, the films can be applied as electromagnetic shielding windows for photodetectors.</p>

physics, applied,materials science, coatings & films
Pulsed Laser Deposition of Organic Thin Films

WANG Wei,LI Chengxiang,SHENG Liusi,ZHANG Guobin,WANG Shufen

DOI: https://doi.org/10.3321/j.issn:1005-023x.2007.01.012

2007-01-01

Abstract:Pulsed laser deposition (PLD) is a newly-rising technology for the deposition of thin films. Many satisfying findings have been achieved in the deposition and research of inorganic thin films. And the technology is sophisticated. However, it is only lately that the pulsed laser deposition and research of organic thin films began to develop. Little research has been done in this domain no systematic system is established. So the research on the pulsed laser deposition of organic thin films will be significant.
Spectroscopic characterization of the plasmas formed during the deposition of ZnO and Al-doped ZnO films by plasma-assisted pulsed laser deposition

Peipei Liang,Hua Cai,Xu Yang,Hui Li,Wu Zhang,Ning Xu,Jian Sun,Jiada Wu

DOI: https://doi.org/10.1016/j.sab.2016.09.003

2016-01-01

Abstract:An oxygen-zinc plasma and an oxygen-zinc-aluminum plasma are formed by pulsed laser ablation of a Zn target or pulsed laser co-ablation of a Zn target and an Al target in an electron cyclotron resonance (ECR) discharge-generated oxygen plasma for the deposition of ZnO and Al-doped ZnO (AZO) films. The plasmas are characterized spectroscopically by time-integrated and time-resolved optical emission spectroscopy. Both the oxygen-zinc plasma and the oxygen-zinc-aluminum plasma contain excited species originally present in the working O2 gas and energetic species ablated from the targets. The optical emission of the oxygen-zinc-aluminum plasma is abundant in the emission bands of oxygen molecular ions and the emission lines of mono-atomic oxygen, zinc and aluminum atoms and atomic ions. The time-integrated spectra as well as the time-resolved spectra of the plasma emission indicate that the oxygen species in the ECR oxygen plasma experience additional excitation by the expanding ablation plumes, and the ablated species are excited frequently when traveling accompanying the plume expansion in the oxygen plasma, making the formed plasma highly excited and very reactive, which plays an important role in the reactive growth of ZnO matrix and the in-situ doping of Al into the growing ZnO matrix. The deposited ZnO and AZO films were evaluated for composition analysis by energy dispersive X-ray spectroscopy, structure characterization by X-ray diffraction and optical transmission measurement. The deposited ZnO is slightly rich in O. The Al concentration of the AZO films can be controlled and varied simply by changing the repetition rate of the laser used for Al target ablation. Both the ZnO and the AZO films are featured with hexagonal wurtzite crystal structure and exhibit high optical transparency in a wide spectral region. Al doping results in an improvement in the ultraviolet transparency, a blue shift in the absorption edge and a widening of the band gap.

Recent Development of Low-Voltage Reactive-Ion-plating Deposition of Optical Thin Films in China

Study on the optical thin film deposited by plasma ion plating

Optical-Electric Thin Films Produced By Low Voltage Reactive Plasma Assisted Deposition

Some Oxide-Films Deposited By Reactive Low-Voltage Plasma-Assisted Evaporation

Atomic Layer Deposition and Its Applications in Optical Thin Films

Low Resistivity Transparent Conducting CdO Thin Films Deposited by DC Reactive Magnetron Sputtering at Room Temperature

Advances in Research on Deposition Techniques for ZnO Thin Films

Study on optical coatings by reactive ion plating

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Low Voltage Ion Plating Technique for the Deposition of ZnS, MgF2 Films

Recent Status of Optical Coating Technology and Application in China

Superior Texture-Controlled Zno Thin Film Using Electrochemical Deposition

Atomic Layer Deposition of Metal Oxide Films

Structural, optical and electrical properties of ZnO thin films prepared by reactive deposition

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Two-regime property dependence on plasma power of plasma-enhanced atomic layer-deposited In 2 O 3 thin films and underlying mechanism

Electrochemical Deposition and Characterization of Wide Band Semiconductor ZnO Thin Film

Atomic layer deposition and other thin film deposition techniques: from principles to film properties

Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films

Pulsed Laser Deposition of Organic Thin Films

Spectroscopic characterization of the plasmas formed during the deposition of ZnO and Al-doped ZnO films by plasma-assisted pulsed laser deposition