Abstract:An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra forms an anomalous variation: it decreases from 30 to 100 K, then increases abnormally from 100 to 140 K and decreases again when temperature is beyond 140 K. The increased intensity is attributed to the electrons and holes whose distribution are spatial non-equilibrium distributed participated in the radiative recombination process and the quantum barrier layers are demonstrated to be the source of non-equilibrium distributed carriers. The temperature dependence of this kind of spatial non-equilibrium carriers’ dynamics is very different from that of equilibrium carriers, resulting in the increased emission efficiency which only occurs from 100 to 140 K. Moreover, the luminescence efficiency of MQWs with non-equilibrium carriers is much higher than that without non-equilibrium carriers, indicating the high luminescence efficiency of GaN-based LEDs may be caused by the non-equilibrium distributed carriers. Furthermore, a comparison analysis of MQWs sample with and without hydrogen treatment further demonstrates that the better quantum well is one of the key factors of this anomalous phenomenon.

Temperature-related Exciton Features on the Ga-/N-Faces of a Free-Standing HVPE GaN

Effect of Temperature on Longitudinal Optical Phonon-Assisted Exciton Luminescence in Heteroepitaxial GaN Layer

Band-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects

Temperature Dependent Photon Emission Spectra of Free Excitons in Phonon Field of GaN

Time-resolved photoluminescence spectroscopy of GaN excitonic transitions

Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy

Free Excitonic Transitions in GaN, Grown by Metal-Organic Chemical-Vapor Deposition

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

Spectral Features Of Lo Phonon Sidebands In Luminescence Of Free Excitons In Gan

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Neutral-Donor-Bound Exciton Recombination Dynamics in Gan Grown by Metalorganic Chemical-Vapor-Deposition

Anomalous Temperature Dependence of Photoluminescence in Gainnas/Gaas Multiple Quantum Wells

Optical Properties and Exciton Localization in Ganas/Gaas

Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers

Fano Resonance in the Luminescence Spectra of Donor Bound Excitons in Polar Semiconductors

Phonon-assisted Photoluminescence in Wurtzite GaN Epilayer

Temperature Dependence of the Lo Phonon Sidebands in Free Exciton Emission of Gan

Unique properties of photoluminescence excitation spectra in a Eu-doped GaN epitaxial film

Photoluminescence and Capacitance Transients in Highly Mg-doped GaN

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells