Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy

X.J. Su,K. Xu,G.Q. Ren,J.F. Wang,Y. Xu,X.H. Zeng,J.C. Zhang,D.M. Cai,T.F. Zhou,Z.H. Liu,H. Yang

DOI: https://doi.org/10.1016/j.jcrysgro.2013.03.018

IF: 1.8

2013-01-01

Journal of Crystal Growth

Abstract:A detailed study on electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy is presented. There are two distinctive regions with non-homogeneous electrical and optical properties in N-face of GaN revealed by wet etching, Raman and cathodoluminescence. One region exclusively exhibited stronger donor–acceptor pair emission and higher carrier concentration due to impurity incorporation. A strong red-shift of near band edge emission of ∼24meV was also observed owing to additional carrier concentration. Furthermore, the activation energy difference of the etching process between the two regions is ∼0.12eV. The distinctive etching topography was probably due to the difference of surface potentials related to the level of carrier concentration in GaN.