Abstract:The organic semiconductors are treated as non-degenerate based on recent experiment on validity of classical Einstein relationship. The expression of density of holes is analytically derived by using the Boltzmann statistics. The mobility model of Pasveer et al. and the exponential model of Pai modified by Blom et al. are combined to solve drift-diffusion equations to extract information about the mobility and effective density of state. The results show that the mobility model of Pasveer et al. can not well fit the experimental J-V data for a rubrene single crystal from Krellner et al. both at low and high voltages, and some of the parameters extracted show inconsistent temperature dependence which should be constants in the theoretical framework of Pasveer et al. Whereas the exponential model gives satisfactory fit for experimental J-V data at all voltage ranges, and the extracted parameters show correct temperature dependence. The temperature dependence of parameters contained in the exponential model of mobility can be well fitted by using simple expressions proposed by Blom et al. And the temperature dependence of effective density of state derived from the non-degenerate Boltzmann statistics is verified. The distribution of potential, electric field and density of holes are calculated as analyzed.

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Modified Transport Model for Organic Diodes Considering the Neutral Condition and Two Types of Density of State

Improvement of Mobility Edge Model by Using New Density of States with Exponential Tail for Organic Diode

Unified Mobility Model for Diffusion-Limited Current in Organic Diodes Based on Fermi-Dirac Statistics

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Extended Version of Carrier-Based Analytical Model to Account for the Doped Effect of Symmetric Double-Gate MOSFETs

A Complete Carrier-Based Non-Charge-Sheet Analytic Model for Nano-Scale Undoped Symmetric Double-Gate MOSFETs

A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

Comparative Study of the Exponential-Trap-based and the Mobility-Based Space-Charge-limited Current Models for Organic Diode Modeling

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

A Unified Carrier-Based Model for Undoped Symmetric Double-Gate and Surrounding-Gate Mosfets

A Closed-Form Model for Position-Dependent Potential Across the Channel in DG-MOSFETs

Study of Applicability of Boltzmann-Statistics and Two Mobility Models for Organic Semiconductors

Analytic current-voltage relationship based on the unified mobility model for organic diodes

Improvement of unified mobility model with analytic current-voltage expression for organic diodes

A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

Exponential-type Density of States with Clearly Cutting Tail for Organic Semiconductors

Dispersion Relation and General Charge-Transport Model for Organic Semiconductors

Improved Model For Diffusion-Limited Current In Organic Metal-Insulator-Metal Diodes

A unified carrier-based model for symmetric Double-Gate and Surrounding-Gate MOS transistors

Charge-Based Model for Symmetric Double-Gate Mosfets with Inclusion of Channel Doping Effect