Abstract:A partially-depleted dual-material surrounding-gate metal-oxide-semiconductor field-effect-transistor (MOSFET) structure (DMSG) is proposed to suppress the short channel effect and to increase the current drivability. Two-dimensional analytical models for both surface potential and threshold voltage are respectively presented for the novel structure. The dual-material surrounding gate consists of two metals connecting tightly with different work functions, and it can produce the electric field peak near the source in the channel, decrease the electric field near the drain, and mask the influence of the drain voltage on the minimum surface potential. The potential Poisson equations in the two depleted divisions are given with the boundary conditions in the cylindrical coordinate system. The analytical models are derived based on the solution of the partial differential equations through reducing the dimensions with parabolic potential approximation in the direction vertical to the channel. Numerical simulation and comparisons with the traditional partially depleted device show that the DMSG device increases the carrier transport efficiency, and suppresses the short channel effect, drain-induced barrier lowering effect and hot carrier effect, and that the relative error between the derived analytical model and the numerical simulation software is less than 5%.

Modeling and Simulation of Dual Material Gate (DMG) Structure LDMOS

Study on Characteristics of a Dual-Material Gate LDMOS

Design of a Dual-Material Gate LDMOS

Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping

Research on Characteristics of Dual-Material Gate MOSFET in 22nm Technology Node

Threshold Voltage Modeling of Partially-Depleted Dual-Material Surrounding Gate Field-Effect Transistor

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs.

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

An Analytic Model for Channel Potential and Subthreshold Swing of the Symmetric and Asymmetric Double-Gate MOSFETs

Current modeling and simulation of dual-material surrounding-gate MOSFET with asymmetric halo

A Two-Dimensional Analytical Model of Fully Depleted Asymmetrical Dual Material Gate Double-Gate Strained-Si MOSFETs

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

Subthreshold current model of fully depleted dual material gate SOI MOSFET

A Single-Halo Dual-Material Gate SOI MOSFET

A Unified Carrier-Based Model for Undoped Symmetric Double-Gate and Surrounding-Gate Mosfets

An analytical current model for lateral gradual doping channel in LDMOS

Two-Dimensional Threshold Voltage Analytical Model of Dmg Strained-Silicon-On-Insulator Mosfets

A unified carrier-based model for symmetric Double-Gate and Surrounding-Gate MOS transistors

Characteristics of Β-(Alxga1−x)2o3/ga2o3 Dual-Metal Gate Modulation-Doped Field-Effect Transistors Simulated by TCAD

Quasi-2D Compact Modeling for Double-Gate MOSFET