Self-consistent model of unipolar transport in organic semiconductor diodes: accounting for a realistic density-of-states distribution

S.V. Yampolskii,Yu.A. Genenko,c. Melzer,H. von Seggern
DOI: https://doi.org/10.1063/1.3569839
2011-03-09
Abstract:A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states distribution as well as the presence of trap states in an organic material. The consequences resulting from the model are discussed exemplarily on the basis of an indium tin oxide/organic semiconductor/metallic conductor structure. A comparison of the theory to experimental data of a unipolar indium tin oxide/poly-3-hexyl-thiophene/Al device is presented.
Materials Science
What problem does this paper attempt to address?
This paper attempts to solve the problem of accurately describing charge - carrier injection and transport in organic semiconductor diodes (OSDs). Specifically, the authors developed a self - consistent mean - field model for describing the unipolar transport process in organic semiconductor materials. This model takes into account the actual density - of - states (DOS) distribution and the existence of trap states, thus more accurately simulating the charge - transport behavior. ### Main problems 1. **Description of charge injection and transport**: - The charge - injection and - transport mechanisms in organic semiconductors (OSCs) have always been the focus of research, especially when these materials are used as basic components in electronic devices such as organic field - effect transistors, organic light - emitting diodes, or organic photovoltaic cells. - Traditional models usually assume that charge transport is controlled by the hopping mechanism and use the concept of the effective transport energy level to simplify the description. However, these models often ignore the actual density - of - states distribution and the influence of trap states. 2. **Complexity of the density - of - states (DOS) distribution**: - Organic systems are usually disordered semiconductors with a relatively narrow intrinsic density - of - states distribution, which is usually approximated as a Gaussian function. - In addition to the intrinsic density - of - states distribution, disordered OSCs may also contain deep - trap states caused by impurities or chemical and structural defects. These trap states are usually located below the intrinsic density - of - states distribution and are therefore called deep traps. 3. **Injection - barrier height and temperature dependence**: - The process of charge injection from the electrode into the organic layer is an important part of the function of organic devices. However, the methods for describing this process are still controversial. - The injection - barrier height and temperature dependence have a significant impact on the charge - transport characteristics, and existing models do not fully consider these factors. ### Solutions The authors extended previous work (such as Refs. 34, 35, 37) by introducing a self - consistent continuous - description method to consider the actual density - of - states shape of organic materials. Specifically: - **Model framework**: Use the concept of the transport energy level to describe charge transport and focus on the influence of the injection - barrier height and density - of - states parameters on the current - voltage (I - V) characteristics. - **Boundary conditions**: Determine the electric field and carrier density at the electrode/OSC interface in a self - consistent manner, including the limit cases of weak (single - particle) and strong (multi - particle) injection. - **Experimental verification**: Apply the model to the experimental data of poly - 3 - hexylthiophene (P3HT) unipolar diodes to verify the validity of the model. In this way, this paper provides a more comprehensive and accurate theoretical framework for describing the charge - injection and - transport behavior in organic semiconductor diodes.