Model of the electrochemical conversion of an undoped organic semiconductor film to a doped conductor film

M. Modestov,V. Bychkov,G. Brodin,D. Valiev,M. Marklund,P. Matyba,L. Edman

DOI: https://doi.org/10.1103/PhysRevB.81.081203

2009-09-16

Abstract:We develop a model describing the electrochemical conversion of an organic semiconductor (specifically, the active material in a light-emitting electrochemical cell) from the undoped non-conducting state to the doped conducting state. The model takes into account both strongly concentration-dependent mobility and diffusion for the electronic charge carriers and the Nernst equation in the doped conducting regions. It is demonstrated that the experimentally observed doping front progression in light-emitting electrochemical cells can be accurately described with this model.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to describe the process of the conversion of organic semiconductor thin films from the non - doped (non - conductive) state to the doped (conductive) state under electrochemical conditions. Specifically, the authors developed a model to explain this conversion process and compared its results with recent experimental data.

### Main problems
1. **Electrochemical conversion mechanism**: How to accurately describe the doping process of organic semiconductor materials (especially the active materials in light - emitting electrochemical cells) under electrochemical conditions?
2. **Explanation of experimental phenomena**: How to explain the phenomenon of doping front progress observed in the experiment?

### Model features
- **Concentration - dependent mobility**: Consider the concentration - dependent mobility of electrons and holes.
- **Nernst equation**: Apply the Nernst equation in the doped region to describe the ion equilibrium.
- **Quasi - neutral condition**: Assume that the charge in the system remains almost neutral, but a small charge imbalance will lead to a large electric field.

### Experimental phenomena
- **Fluorescence quenching**: Visualize the doped region through the fluorescence quenching phenomenon under UV light.
- **Current evolution**: Extract doping concentration information by analyzing the change of current over time.

### Mathematical model
The model is based on the following equations:

- Force balance equation:
\[
n m \dot{v}=-q n \nabla(\phi - \phi_N)-k_B T \nabla n-\frac{n m v}{\tau}
\]
where \(n\) is the concentration, \(m\) is the mass, \(v\) is the velocity, \(q\) is the charge, \(k_B\) is the Boltzmann constant, \(T\) is the temperature, \(\tau\) is the collision time, and \(\phi - \phi_N\) is the overpotential experienced by the particle.

- Nernst potential:
\[
\phi_N(n_h, n_e, T)=\left(\frac{k_B T}{q_{h, e}}\right) \ln \left(\frac{n_{h, e}}{n_{h, e, \infty}-n_{h, e}}\right)
\]
where \(n_{h, e, \infty}\) is the maximum concentration of holes or electrons.

- Continuity equation:
\[
\frac{\partial n_{h, e}}{\partial t}-\nabla \cdot[\pm \mu_{h, e} n_{h, e} \nabla(\phi - \phi_N)+D_{h, e} \nabla n_{h, e}]=0
\]
\[
\frac{\partial n_{\pm}}{\partial t}-\nabla \cdot[\pm \mu_{\pm} n_{\pm} \nabla \phi+D_{\pm} \nabla n_{\pm}]=0
\]

### Results and conclusions
- **Doping front velocity**:
\[
U =-\left(\frac{n_0}{n_{h}^{\infty}}\right)(\mu_++\mu_-) \frac{\partial \phi_0}{\partial x}
\]
The velocity of the doping front is determined by the initial ion concentration, hole mobility and electric field.

- **Structural features**: The doping front has a very sharp leading edge and a slowly changing trailing edge, which is consistent with experimental observations.

In conclusion, this model successfully explains the doping process of organic semiconductor thin films under electrochemical conditions, and its prediction results are highly consistent with the experimental data.