Abstract:The polarization fields in the c-axis-oriented hexagonal GaN system cause spatial separation of electrons and holes in quantum wells, reducing the quantum efficiency, and resulting in a red shift of the emission as well as a blue shift with increasing injected carrier density. In this paper, we report on the growth and optical characterization of InGaN/GaN multiple quantum wells (MQWs) on nonpolar (11 (2) over bar0) a- and polar (0001) c-planes, as well as two sernipolar planes, (11 (2) over bar2) and (1 (1) over bar 01) of GaN. There are two kinds of a-plane used in this study. One of the (11 (2) over bar0) a-planes was obtained on (I TOO) m-plane sapphire substrates during the epitaxial lateral overgrowth (ELO) of (11 (2) over bar2) oriented sernipolar GaN films, while the other one was planar a-plane GaN gown on (1 (1) over bar 01) r-plane sapphire substrates. The sernipolar (11 (2) over bar2) and (1 (1) over bar 01) planes were obtained as sidewall facets during the ELO of c-plane GaN with the mask stripes aligned along the GaN m-axis and a-axis, respectively. InGaN/GaN multiple quantum wells (MQWs) with a nominal well thickness of 4 nm and a barrier thickness of 8 nm were grown on these five GaN samples by metalorganic chemical vapor deposition. Excitation power dependent photoluminescence (PL) measurements were carried out on these quantum well structures to study the effect of polarization-induced electric field on the band-edge emission. The quantum-well emission from the two a-plane MQWs showed no shift, compared to a 74 meV blue shift for the c-plane MQWs when the excitation power density was increased from 4.1x10(3) mW/cm(2) to 1.2x10(5) mW/cm(2). The sernipolar (11 (2) over bar2) showed a blue shift of 35 meV with increased excitation power density, suggesting reduced polarization compared to that in c-plane. No quantum-well emission could be observed for the MQWs on (1101) semipolar planes. The shift in the quantum-well emission energy was attributed to the polarization field screening by photo-generated carriers in the quantum wells.

Optical Properties of Polar, Nonpolar, and Semipolar Ingan/Gan Multiple Quantum Wells on Sapphire

Anisotropic structural and optical properties of semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates

Semi-polar (20–21) InGaN/GaN Multiple Quantum Wells Grown on Patterned Sapphire Substrate with Internal Quantum Efficiency Up to 52 Per Cent

Comparison of the luminous efficiency of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells grown by plasma-assisted molecular beam epitaxy

Spatial Distribution of Optical Intensity of Overgrown Semi-Polar (20-21) InGaN/GaN Multiple Quantum Wells Dominated by Surface Morphology

Reduction of Polarization Field Strength in Fully Strained C-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD

Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes

Optical Characteristics of A-Plane Zno/Zn0.8mg0.2o Multiple Quantum Wells Grown by Pulsed Laser Deposition

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Polarization Modification In Ingan/Gan Multiple Quantum Wells By Symmetrical Thin Low Temperature-Gan Layers

Fabrication And Properties Of Coherent-Structure In-Polarity Inn/In0.7ga0.3n Multiquantum Wells Emitting At Around 1.55 Mu M

Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

Effect of Polarization on Intersubband Transition in AlGaN/GaN Multiple Quantum Wells

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells

Impact of ITO Layer on the Spatial Optical Distribution of Semipolar (20-21) InGaN/GaN Multiple Quantum Wells with Surface Morphology.

Improved Optical Properties of Nonpolar AlGaN-Based Multiple Quantum Wells Emitting at 280 Nm

Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission

Polarization Of Edge Emission From Iii-Nitride Light Emitting Diodes Of Emission Wavelength From 395 To 455 Nm

Depth profiled polarization effects in AlGaN quantum wells probed with interconnected cathodoluminescence spectroscopy and ion sputtering

Anisotropic optical gains in a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown via pulsed-laser deposition