Abstract:Using the example of III-V nitrides crystallizing in a wurtzite structure (GaN, AlN, and InN), this review presents the special role of hydrostatic pressure in studying semiconductor properties. Starting with a brief description of high-pressure techniques for growing bulk crystals of nitride compounds, we focus on the use of hydrostatic pressure techniques in both experimental and theoretical investigations of the special properties of nitride compounds, their alloys, and quantum structures. The bandgap pressure coefficient is one of the most important parameters in semiconductor physics. Trends in its behavior in nitride structures, together with trends in pressure-induced phase transitions, are discussed in the context of the behavior of other typical semiconductors. Using InN as an example, the pressure-dependent effects typical of very narrow bandgap materials, such as conduction band filling or effective mass behavior, are described. Interesting aspects of bandgap bowing in In-containing nitride alloys, including pressure and clustering effects, are discussed. Hydrostatic pressure also plays an important role in the study of native defects and impurities, as illustrated by the example of nitride compounds and their quantum structures. Experiments and theoretical studies on this topic are reviewed. Special attention is given to hydrostatic pressure and strain effects in short periods of nitride superlattices. The explanation of the discrepancies between theory and experiment in optical emission and its pressure dependence from InN/GaN superlattices led to the well-documented conclusion that InN growth on the GaN substrate is not possible. The built-in electric field present in InGaN/GaN and AlGaN/GaN heterostructures crystallizing in a wurtzite lattice can reach several MV/cm, leading to drastic changes in the physical properties of these structures and related devices. It is shown how hydrostatic pressure modifies these effects and helps to understand their origin.

Effect of Hydrostatic Pressure on the Dc Characteristics of AlGaN ∕ GaN Heterojunction Field Effect Transistors

Effect of Hydrostatic Pressure on the Current-Voltage Characteristics of GaN∕AlGaN∕GaN Heterostructure Devices

Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

Inaln/Gan Heterostructure Field-Effect Transistors on Fe-Doped Semi-Insulating Gan Substrates

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Effect of Hydrogen Poisoning on P-Gate AlGaN/GaN HEMTs

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Al X in 1-X N/GaN Heterostructure Field Effect Transistors

Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

Temperature dependence of the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN HFETs

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties-An Example of III-V Nitrides

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

Gan-Based Micro Pressure Sensor For Extreme Environments

Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs

AlGaN/GaN Pressure Sensor with a Wheatstone Bridge Structure

Theoretical Investigation of High-Voltage Self-Charge-Balanced Superjunction AlGaN/GaN Heterojunction Field Effect Transistors with Nanoscale Polarization-Doped AlGaN Layer

Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor