Abstract:Using the example of III-V nitrides crystallizing in a wurtzite structure (GaN, AlN, and InN), this review presents the special role of hydrostatic pressure in studying semiconductor properties. Starting with a brief description of high-pressure techniques for growing bulk crystals of nitride compounds, we focus on the use of hydrostatic pressure techniques in both experimental and theoretical investigations of the special properties of nitride compounds, their alloys, and quantum structures. The bandgap pressure coefficient is one of the most important parameters in semiconductor physics. Trends in its behavior in nitride structures, together with trends in pressure-induced phase transitions, are discussed in the context of the behavior of other typical semiconductors. Using InN as an example, the pressure-dependent effects typical of very narrow bandgap materials, such as conduction band filling or effective mass behavior, are described. Interesting aspects of bandgap bowing in In-containing nitride alloys, including pressure and clustering effects, are discussed. Hydrostatic pressure also plays an important role in the study of native defects and impurities, as illustrated by the example of nitride compounds and their quantum structures. Experiments and theoretical studies on this topic are reviewed. Special attention is given to hydrostatic pressure and strain effects in short periods of nitride superlattices. The explanation of the discrepancies between theory and experiment in optical emission and its pressure dependence from InN/GaN superlattices led to the well-documented conclusion that InN growth on the GaN substrate is not possible. The built-in electric field present in InGaN/GaN and AlGaN/GaN heterostructures crystallizing in a wurtzite lattice can reach several MV/cm, leading to drastic changes in the physical properties of these structures and related devices. It is shown how hydrostatic pressure modifies these effects and helps to understand their origin.

Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor

Phonon Properties and Thermal Conductivity of GaN Nanofilm under Prestress and Surface/interface Stress

First-principle Calculations of the Structure and Elastic Properties of GaAs under Pressure

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Hydrostatic Pressure Effect on Lattice Thermal Conductivity in Si Nanofilms

The role of pressure on lattice thermal conductivity and its related thermodynamical parameters in In0.53Ga0.47As nanofilms

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties-An Example of III-V Nitrides

Effects of Hydrostatic Pressure on the Electrical Properties of Hexagonal Ge2Sb2Te5: Experimental and Theoretical Approaches

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures: Effects of hydrostatic pressure

Effects of strain and hydrostatic pressure on exciton properties in asymmetric zinc-blende (In,Ga)N/GaN coupled double quantum wells

Effect of Hexagonality on the Pressure-Dependent Lattice Dynamics of 4H-Sic

Hydrostatic Pressure Effect On Photoluminescence From A Gan0.015as0.985/Gaas Quantum Well

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Effects of Hydrostatic Pressure on Spin-Lattice Coupling in Two-Dimensional Ferromagnetic Cr2Ge2Te6

Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations

Electric field effect on the thermal conductivity of wurtzite GaN

Effects of electric field and hydrostatic pressure on the exciton states in strained zinc-blende In x Ga 1 − x N-GaN coupled double quantum wells

First principles calculations of the pressure affection to g-C3N4

Effect of Hydrostatic Pressure on the Dc Characteristics of AlGaN ∕ GaN Heterojunction Field Effect Transistors

Influence of pressure on donor bound exciton states in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer Wse2