Abstract:Thermal transport by phonons in films with thicknesses of less than 10 nm is investigated in a soft system (Lennard-Jones argon) and a stiff system (Tersoff silicon) using two-dimensional lattice dynamics calculations and the Boltzmann transport equation. This approach uses a unit cell that spans the film thickness, which removes approximations related to the finite cross-plane dimension required in typical three-dimensional-based approaches. Molecular dynamics simulations are performed to obtain finite-temperature structures for the lattice dynamics calculations and to predict thermal conductivity benchmarks. Thermal conductivity decreases with decreasing film thickness until the thickness reaches four unit cells (2.1 nm) for argon and three unit cells (1.6 nm) for silicon. With a further decrease in film thickness, thermal conductivity plateaus in argon while it increases in silicon. This unexpected behavior, which we identify as a signature of phonon confinement, is a result of an increased contribution from low-frequency phonons, whose density of states increases as the film thickness decreases. Phonon mode-level analysis suggests that confinement effects emerge below thicknesses of ten unit cells (5.3 nm) for argon and six unit cells (3.2 nm) for silicon. Thermal conductivity predictions based on the bulk phonon properties combined with a boundary scattering model do not capture the low thickness behavior. To match the two-dimensional lattice dynamics and molecular dynamics predictions for larger thicknesses, the three-dimensional lattice dynamics calculations require a finite specularity parameter that in some cases approaches unity. These findings point to the challenges associated with interpreting experimental thermal conductivity measurements of ultrathin silicon films, where surface roughness and a native oxide layer impact phonon transport.

The role of pressure on lattice thermal conductivity and its related thermodynamical parameters in In0.53Ga0.47As nanofilms

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Phonon Properties and Thermal Conductivity of GaN Nanofilm under Prestress and Surface/interface Stress

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Effects Of Surface Stress On The Phonon Properties In Gan Nanofilms

Hydrostatic Pressure Effect on Lattice Thermal Conductivity in Si Nanofilms

On the Role of Piezoelectricity in Phonon Properties and Thermal Conductivity of GaN Nanofilms

Modification of the phonon thermal conductivity in spatially confined semiconductor nanofilms under stress fields

Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor

Simulating Stress-Tunable Phonon and Thermal Properties in Heterostructured AlN/GaN/AlN-nanofilms

Thermal Conductivity and Phonon Scattering of AlGaN Nanofilms by Elastic Theory and Boltzmann Transport Equation

Phonon Confinement and Transport in Ultrathin Films

Modeling Phonon Thermal Conductivity in Spatially Confined GaN Nanofilms under Stress Fields and Phonon Surface Scattering

Effects of Surface Charges on Phonon Properties and Thermal Conductivity in GaN Nanofilms

Size Effect Of Lattice Thermal Conductivity Across Nanoscale Thin Films By Molecular Dynamics Simulations

Effect of Stress on Thermal Properties of AlGaN Nanofilms

Dependence of Pressure on Electronic and Optical Properties of the Ternary Alloy GaAlAs

Electron-Induced Nonmonotonic Pressure Dependence of the Lattice Thermal Conductivity of -TaN

Electron-induced non-monotonic pressure dependence of the lattice thermal conductivity of θ-TaN

Growth-microstructure-thermal property relations in AlN thin films