Abstract:Piezotronic transistor operating in the quantum tunneling regime has recently roused wide interest for developing ultrasensitive strain sensing with applications in wearable electronics and human-machine interfaces. However, the lack of a strict theoretical demonstration from a quantum perspective renders the development of such an emerging area particularly slow due to their complex fabrication process and vulnerable experimental interference. Here, by combining third-dimensional self-consistent calculation with a nonequilibrium Green's function framework, we study the intrinsic device properties of piezotronic tunneling transistor (PTT) based on AlN/GaN core-shell nanowire. The results show that strain-induced piezoelectric polarization can remarkably tune tunneling barrier height and width, both of which are increased by tensile strain and decreased by compressive strain. At a moderate strain amplitude of 1.0% and bias of 2.0 V, the strain-induced change in effective barrier height and width can reach as high as 0.5 eV and 4.0 nm, respectively. This remarkable tunability in the barrier allows for an ultrahigh on/off current ratio 1017, and giant gauge factor 1.2 x 108 in current and 1.1 x 1013 in resistance. The performance can be further optimized by properly tailoring device architectures, including insulator thickness, nanowire length, or core-shell size. Our demonstration of the PTT with combined quantum tunneling and piezotronic effect opens a window for designing highly sensitive, large on/off ratio and low-power strain sensing.

Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor

High-resolution Electroluminescent Imaging of Pressure Distribution Using a Piezoelectric Nanowire LED Array

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

Effect of Hydrostatic Pressure on the Current-Voltage Characteristics of GaN∕AlGaN∕GaN Heterostructure Devices

Effect of Hydrostatic Pressure on the Dc Characteristics of AlGaN ∕ GaN Heterojunction Field Effect Transistors

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Ultrasensitive Strain Sensor Based on a Tunnel Junction with an AlN/GaN Core-Shell Nanowire

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Direct-readout Pressure Sensor Based on AlGaN/GaN Heterostructure

AlGaN/GaN Pressure Sensor with a Wheatstone Bridge Structure

Piezoelectric pressure sensor based on flexible gallium nitride thin film for harsh-environment and high-temperature applications

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Highly sensitive strain sensors based on piezotronic tunneling junction

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Design and Testing on High Sensitive Micro-accelerometer Based on HEMT

A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric

Piezojunction effect in heterojunctions under external bias for ultrasensitive strain sensing

Gan-Based Micro Pressure Sensor For Extreme Environments

Piezotronic AlGaN Nanowire Schottky Junctions Grown on a Metal Substrate

Two-dimensional van der Waals heterostructure for ultra-sensitive nanoelectromechanical piezoresistive pressure sensing

Piezoelectric ultra-sensitive aluminum nitride thin film on flexible aluminum substrate