Abstract:We report a systematic and quantitative study of near-infrared intersubband absorption in strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without delta doping. For AlGaN/GaN, we obtained good theoretical agreement with experimental measurements of transition energy, integrated absorbance and linewidth by considering many-body effects, interface roughness, and calculations of the transition lifetime that include dephasing. For the AlInN/GaN system, experimental measurements of the integrated absorbance due to the superlattice transitions produced values more than one order of magnitude lower than AlGaN/GaN heterostructures at similar doping levels. Furthermore, observed transition energies were roughly 150 meV higher than expected. The weak absorption and high transition energies measured in these structures is attributed to columnar alloy inhomogeneity in the AlInN barriers observed in high-angle annular dark-field scanning transmission electron microscopy. We simulated the effect of these inhomogeneities using three-dimensional band-structure calculations. The inhomogeneities were modeled as AlInN nanorods with radially varying In composition embedded in the barrier material of the superlattice. We show that inclusion of the nanorods leads to the depletion of the quantum wells (QWs) due to localization of charge carriers in high-In-containing regions. The higher energy of the intersubband transitions was attributed to the relatively uniform regions of the QWs surrounded by high Al (95%) composition barriers. The calculated transition energy assuming Al0.95In0.05N barriers was in good agreement with experimental results.

Atom Probe Analysis Of Aln Interlayers In Algan/Aln/Gan Heterostructures

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Comparative Study Of Intersubband Absorption In Algan/Gan And Alinn/Gan Superlattices: Impact Of Material Inhomogeneities

The Influence of 1nm AlN Interlayer on Properties of the Al0.3Ga0.7N/AlN/GaN HEMT Structure

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Linear Dependency of Al-mole Fraction with Group-Iii Precursor Flows in AlxGa1−xN (0≤x≤1) Deposition by LP OMVPE

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures

Toward Accurate Composition Analysis of GaN and AlGaN Using Atom Probe Tomography

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Intersubband Absorption Properties of High Al Content Al X Ga 1− X N/GaN Multiple Quantum Wells Grown with Different Interlayers by Metal Organic Chemical Vapor Deposition

Surface chemistry in atomic layer deposition of AlN thin films from Al(CH3)3 and NH3 studied by mass spectrometry

Mn as surfactant for the self-assembling of Al$_x$Ga$_{1-x}$N/GaN layered heterostructures

Wafer Level Quasi-Van Der Waals Epitaxy of AlGaN/GaN Heterojunctions on Sp2-Bonded BN Controlled by AlN Nucleation Layer

Atomic Simulation of Homoepitaxial AlN on Non-Polar (11-20) Plane

Behaviours of the lattice-polarity inversion in the AlN growth on the c-Al2O3(0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition

Molecular Beam Epitaxial Growth and Physical Properties of AlN/GaN Superlattices with an Average 50% Al Composition

Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia

Algan/Gan Heterostructure Grown By Metalorganic Vapor Phase Epitaxy

Effect of AlN Interlayer on Incorporation Efficiency of Al Composition in AlGaN Grown by MOVPE

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures