Zno Quantum Dots Synthesized by A Vapor Phase Transport Process

JG Lu,ZZ Ye,JY Huang,LP Zhu,BH Zhao,ZL Wang,S Fujita
DOI: https://doi.org/10.1063/1.2172154
IF: 4
2006-01-01
Applied Physics Letters
Abstract:A vapor phase transport growth process has been developed to synthesize ZnO quantum dots (QDs) on Si substrates. The characteristics were investigated for as-prepared ZnO QDs without any additional treatment. The formation of ZnO QDs with 6 nm in height and 15 nm in diameter is confirmed by scanning electron microscope and atomic force microscopy. Room-temperature photoluminescence reveals that the as-prepared ZnO QDs exhibit a predominant ultraviolet emission at 3.32 eV while the low energy defect-related blue-green emission is significantly quenched. The band gap of ZnO QDs is determined to be 3.41 eV, which evidently indicates the quantum confinement effects.
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