Epitaxial growth of quantum dots on van der Waals surfaces
Kaiyao Xin,Lian Li,Ziqi Zhou,Chen Zhang,Juehan Yang,Hui-Xiong Deng,Jinchuan Zhang,Junqi Liu,Kaihui Liu,Can Liu,Fengqi Liu,Zhongming Wei,Shenqiang Zhai
DOI: https://doi.org/10.1038/s44160-024-00562-0
2024-06-05
Nature Synthesis
Abstract:Zero-dimensional quantum dots (QDs), which have inherent quantum confinement effects and sharp discrete energy levels, are regarded as essential building blocks for quantum information devices. Current manufacturing strategies often exhibit limited adaptability in terms of compositional design or interface engineering. Here we propose a van der Waals (vdW) epitaxial strategy for growing intrinsic QDs by modulating the interfacial couplings between vdW surfaces and QDs. Versatile III–V (MX, M = Ga, In; X = As, Sb) and IV–VI (SnTe) QDs were fabricated without considering the lattice mismatch constraints, leading to QDs with more intrinsic features. We further demonstrated that the as-grown InSb QDs/MoS 2 showed a broadened photoresponse in the near-infrared region due to the efficient charge-transfer channels at their vdW interfaces. This work reports a synthetic route to the all-in-solid epitaxy of QDs, which may expand the optoelectronic applications of QDs beyond those that are conventionally grown.