Abstract:Room-temperature red cathodoluminescence (CL) emission (R band) arising from the paramagnetic point-defect population present in amorphous silicon oxide (SiOx) has been characterized with respect to its shift upon applied stress, according to a piezo-spectroscopic (PS) approach. The R band (found at around 630 nm) originates from nonbridging oxygen hole centers (NBOHC; Si-O*) generated in the presence of oxygen-excess sites. It is shown that reliable stress assessments can be obtained in silica glass with a relatively high spatial resolution, provided that appropriate spectroscopic procedures are developed to precisely extract from the CL spectrum the shift upon stress of the R band, isolated from other partly overlapping bands. Macroscopic and microscopic PS calibration procedures are shown to lead to consistent results on silica materials with different chemical characteristics and, thus, with different intrinsic defect populations. In addition, quantitative calibrations of both electron probe size and luminescence emission distribution within the electron probe are given. As an application of the PS technique, the magnitude of the residual stress piled up (mainly due to a thermal expansion mismatch) at a sharp silica/silicon interface has been characterized by taking into account the gradient in defect population developed as a function of distance from the interface. In the Results and Discussion section, brief comments are offered regarding the possible impact of highly spatially resolved stress assessments in silica glass upon the development of new materials and advanced electronic devices.

Stress Dependence of F+-center Cathodoluminescence of Sapphire

Stress Dependence of Sapphire Cathodoluminescence from Optically Active Oxygen Defects As A Function of Crystallographic Orientation

Stress perturbation method for the assessment of cathodoluminescence probe response functions

Stress Dependence of the Near-Band-Gap Cathodoluminescence Spectrum of Gan Determined by Spatially Resolved Indentation Method

Stress Dependence of Optically Active Diamagnetic Point Defects in Silicon Oxynitride

Interfacial Residual Stresses in Semiconductor Devices Measured on the Nano-Scale by Cathodoluminescence Piezospectroscopy

Biaxial Stress Dependence of the Electrostimulated Near-Band-Gap Spectrum of Gan Epitaxial Film Grown on (0001) Sapphire Substrate

Spatially Resolved Residual Stress Assessments of Gan Film on Sapphire Substrate by Cathodoluminescence Piezospectroscopy

Stress Dependence of Paramagnetic Point Defects in Amorphous Silicon Oxide.

Electro-Stimulated Piezo-Spectroscopy for Measuring Nano-Scale Residual Stress Fields in Ceramics

Microscopic Stress Analysis In A Luminescent Glass

Stress Dependence of the Cathodoluminescence Spectrum of N-doped 3C-Sic

Residual Stress Inspection by Eu3+ Photoluminescence Piezo-Spectroscopy: an Application in Thermal Barrier Coatings

Cathodo-luminescence of color centers induced in sapphire and yttria-stabilized zirconia by high-energy electrons

Residual Stress Trend in Thermal Barrier Coatings in Through Thickness Direction Measured by Photoluminescence Piezospectroscopy

A Photo-Stimulated Spectroscopic Method for Spatially Resolved Stress Analysis in Hetero-Epitaxial Films

Spatially Resolved Crack-Tip Stress Analysis in Semiconductor by Cathodoluminescence Piezospectroscopy

Raman Analysis of Three-Dimensionally Graded Stress Tensor Components in Sapphire

Effects of Applying Stress on the Electron Field Emission Properties in Amorphous Carbon Thin Films

Visualization of Microscopic Stress Fields in Silica Glass in the Scanning Electron Microscope

High-resolution Stress Assessments of Interconnect/dielectric Electronic Patterns Using Optically Active Point Defects of Silica Glass As a Stress Sensor