Abstract:In this research, aluminum-doped zinc oxide (AZO) films were prepared from 2 weight percentage (wt.%) of aluminum oxide (Al 2 O 3 ) doped zinc oxide (ZnO) by RF magnetron sputtering technique at various RF powers of 100, 150 and 200 W. In order to study the effect of RF power on crystal structure and electrical properties of deposited AZO films. The AZO films were deposited on glass slides at room temperature andpost-annealed at 500 ° C in vacuum for 1 hour. From XRD measurements, it was found that (002) plane increased with higher RF power from 100 to 150 W, however it became smaller at 200 W. In the same way, for mobility, it was consistent with the XRD spectra in which it was low or high for low and high crystallinity respectively. Carrier concentration of the AZO film deposited at 100 and 150 W were not different while it decreased for that deposited at 200 W. Decrease of carrier concentration implied that, at higher RF power, Al substitution for Zn atom was decreased but it segregated into interstitial sites, which was consistent with shifted (002) peak to lower 2 θ angle as can be seen in XRD spectra. Al atoms in the interstitial sites played a role of electron trap resulting in decrease of carrier concentration. Because of higher mobility, the lowest sheet resistance of 63.69 Ω /sq can be achieved for the AZO films deposited at the RF power of 150 W.

The Effect of Deposition Power on the Electrical Properties of Al-Doped Zinc Oxide Thin Films

Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Effect of sputtering power on the microstructure and photelectric properties of Al doped ZnO thin films

Effects of DC Sputtering Power on the Properties of AZO Films Deposited at Room Temperature for CIGS Photovoltaics

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Influence of Al Doping on the Properties of Zno Thin Films Grown by Atomic Layer Deposition

The effects of RF power on crystal structure and electrical properties of aluminum-doped zinc oxide films prepared by RF magnetron sputtering technique

Effect of the ZnO buffer layer thickness on AZO film properties

Investigation of optical properties of aluminum-doped zinc oxide films via flow-limited field-injection electrostatic spraying

Impact of aluminum doping on nonlinear absorption and ultrafast carriers dynamics of Al:CdO thin films

Effect of Aluminum Doping Ratios on the Properties of Aluminum-Doped Zinc Oxide Films Deposited by Mist Chemical Vapor Deposition Method Applying for Photocatalysis

Effect of Pb doping onto physical properties of ZnO thin films deposited by AACVD

Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devices

Effects of RF power variation on properties of N-doped p-type ZnO thin films grown by plasma-assisted MOCVD

Effects of electron doping on the d0 magnetism in N-implanted ZnO and ZnAlO films

Study on Al doped ZnO transparent conducting films

The Effect of Deposition Power on the Micro-Structure and Dielectric Response of Pb0.4sr0.6tio3 Thin Films

Influence of Sputtering Power on Properties of ZnO Thin Films Fabricated by RF Sputtering in Room Temperature

Effect of oxygen annealing temperature on properties of spatial atomic layer deposited aluminum-doped zinc oxide films

Electron doping of ALD-grown ZnO thin films through Al and P substitutions