Abstract:Dimethylarsinic acid (DMA) is a common organic arsenic pollutant in the environment, and its distribution, migration, and transformation are greatly controlled by various active minerals. However, the bonding mechanisms of DMA on aluminum (Al)-substituted ferrihydrite is rarely explored. Here, ferrihydrite samples with Al substitution amounts of 0.00±0.00mol.%, 3.02±0.01mol.%, 6.71±0.11mol.%, 12.89±0.34mol.%, and 20.50±0.76mol.% were prepared, characterized, and were used to test DMA adsorption behaviors and mechanisms. With the increase of Al amount, the particle size and specific surface area of ferrihydrite particles slightly decrease, and the point of zero charge gradually increases. The reaction pH has a significant impact on the DMA adsorption onto minerals surfaces. When the pH is 3-6, the DMA adsorption density is almost unchanged being 0.74-0.77 μmol∙m-2; while pH>6, DMA adsorption density significantly decreases. With the increase in ionic strength, the DMA adsorption density onto Al-substituted ferrihydrite is almost unaffected at pH6, but is greatly increased at pH9. Isothermal adsorption experiments show that Al substitution significantly improves DMA adsorption density on ferrihydrite by 46-61%, with a maximum enhancement at an Al substitution level of 6.70mol%. Ionic strength effect, Fourier transform infrared spectroscopy and As K-edge extended X-ray absorption fine structure spectroscopy analysis show that DMA forms bidentate binuclear inner-sphere complexes on ferrihydrite surfaces through As-OH rather than -CH3 group at pH6, but predominantly forms outer-sphere complexes at pH9. With the increase of Al substitution level in the mineral, DMA also forms monodentate mononuclear and outer-sphere complexes on solids at pH6. These results provide deep insights into the interaction mechanisms and fates of organoarsenicals with natural Fe (hydr)oxide minerals.

Investigation on Gaas Surface Treated with Dimethylaluminumhydride

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Improvement of Atomic-Layer-Deposited Al 2 O 3 /gaas Interface Property by Sulfuration and NH 3 Thermal Nitridation

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Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation