Abstract:The three-dimensional（3D） Dirac semimetals have linearly dispersive 3D Dirac nodes where the conduction band and valence band are connected. They have isolated 3D Dirac nodes in the whole Brillouin zone and can be viewed as a 3D counterpart of graphene. Recent theoretical calculations and experimental results indicate that the 3D Dirac semimetal state can be realized in a simple stoichiometric compound A 3 Bi（A = Na, K, Rb）. Here we report comprehensive high-resolution angle-resolved photoemission（ARPES） measurements on the two cleaved surfaces,（001） and（100）, of Na 3 Bi. On the（001） surface, by comparison with theoretical calculations, we provide a proper assignment of the observed bands, and in particular, pinpoint the band that is responsible for the formation of the three-dimensional Dirac cones. We observe clear evidence of 3D Dirac cones in the three-dimensional momentum space by directly measuring on the k x –k y plane and by varying the photon energy to get access to different out-of-plane k z s. In addition, we reveal new features around the Brillouin zone corners that may be related with surface reconstruction. On the（100） surface, our ARPES measurements over a large momentum space raise an issue on the selection of the basic Brillouin zone in the（100） plane. We directly observe two isolated 3D Dirac nodes on the（100） surface. We observe the signature of the Fermi-arc surface states connecting the two 3D Dirac nodes that extend to a binding energy of ~150 me V before merging into the bulk band. Our observations constitute strong evidence on the existence of the Dirac semimetal state in Na 3 Bi that are consistent with previous theoretical and experimental work. In addition, our results provide new information to clarify on the nature of the band that forms the3 D Dirac cones, on the possible formation of surface reconstruction of the（001） surface, and on the issue of basic Brillouin zone selection for the（100） surface.

Molecular Beam Epitaxial Growth of a Three-Dimensional Topological Dirac Semimetal Na$_3$Bi

Semimetal Na3bi Thin Film Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Topological Dirac Semimetal Na3Bi Films in the Ultrathin Limit via Alternating Layer Molecular Beam Epitaxy

Synthesis of Semimetal A3Bi (a=na, K) Thin Films by Molecular Beam Epitaxy

Progress in Epitaxial Thin-Film Na3 Bi as a Topological Electronic Material

Progress in epitaxial thin-film Na3Bi as a topological electronic material

Dimensional Crossover and Topological Phase Transition in Dirac Semimetal Na 3 Bi Films.

Electronic Structure, Dirac Points and Fermi Arc Surface States in Three-Dimensional Dirac Semimetal Na3Bi from Angle-Resolved Photoemission Spectroscopy

Preface to the special topic section on topological states in condensed matter: Physics and materials science

Growth of Ultrathin Bi$_2$Se$_3$ Films by Molecular Beam Epitaxy

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Topological Limit of Ultrathin Quasi-Free-Standing Bi2te3 Films Grown on Si(111)

Molecular beam epitaxial growth of topological insulators.

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Epitaxial Growth and Structural Characterizations of MnBi2Te4 Thin Films in Nanoscale

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface