Synthesis of Semimetal A3Bi (a=na, K) Thin Films by Molecular Beam Epitaxy

Jing Wen,Hua Guo,Chen-Hui Yan,Zhen-Yu Wang,Kai Chang,Peng Deng,Teng Zhang,Zhi-Dong Zhang,Shuai-Hua Ji,Li-Li Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue
DOI: https://doi.org/10.1016/j.apsusc.2014.11.083
IF: 6.7
2015-01-01
Applied Surface Science
Abstract:Three-dimensional (3D) Dirac cones are predicted to reside in semimetals A(3)Bi (A = Na, K). By using molecular beam epitaxy (MBE) and scanning tunneling microscopy (STM), we have successfully established the growth conditions for Na3Bi thin films on Si(1 1 1)-7 x 7, and determined that the lattice of Na3Bi is rotated by 30 degree with respect to that of Si(1 1 1)-7 x 7. The Na3Bi/Si( 1 1 1)-7 x 7 thin film was further used as the substrate for the growth of K3Bi. The 3D Dirac-cone-like electronic band structures of Na3Bi and K3Bi have been clearly revealed by angle resolved photoelectron spectroscopy (ARPES). (C) 2014 Elsevier B.V. All rights reserved.
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