Quantum Transport in Air-Stable Na 3 Bi Thin Films

Chang Liu,Golrokh Akhgar,James L. Collins,Jack Hellerstedt,Cheng Tan,Lan Wang,Shaffique Adam,Michael S. Fuhrer,Mark T. Edmonds
DOI: https://doi.org/10.1021/acsami.0c05832
2020-07-27
Abstract:Na<sub>3</sub>Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and ultrathin form as a wide-band gap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin and ultrathin films grown via molecular beam epitaxy to ultrahigh vacuum environments. Here, we demonstrate air-stable Na<sub>3</sub>Bi thin films passivated with magnesium difluoride (MgF<sub>2</sub>) or silicon (Si) capping layers. Electrical measurements show that deposition of MgF<sub>2</sub> or Si has minimal impact on the transport properties of Na<sub>3</sub>Bi while in ultrahigh vacuum. Importantly, the MgF<sub>2</sub>-passivated Na<sub>3</sub>Bi films are air-stable and remain metallic for over 100 h after exposure to air, as compared to near instantaneous degradation when they are unpassivated. Air stability enables transfer of films to a conventional high-magnetic field cryostat, enabling quantum transport measurements, which verify that the Dirac semimetal character of Na<sub>3</sub>Bi films is retained after air exposure.This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology
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