Abstract:The principal obstacle to III-V compound semiconductors rivaling or exceeding the properties of Si electronics has been the lack of high-quality, thermodynamically stable insulators on GaAs (or on III-V materials in general). For more than four decades, the research community has searched for suitable III-V compound semiconductor gate dielectrics or passivation layers. The literature testifies to the extent of this effort, with representative, currently active approaches including sulfur passivation , silicon interface control layers (Si ICLs) , in situ molecular beam epitaxy (MBE) growth of Ga2O3(Gd2O3) , ex situ atomic layer deposition (ALD) growth of Al2O3 and HfO2 , wet oxidation of InAlP , jet vapor deposition (JVD) 12 of Si3N4, and ALD or PVD of HfO2 + Si ICL . The research on ALD high-k dielectric is of particular interest, since the Si industry is getting familiar with ALD Hfbased dielectrics and this approach has the potential to become a manufacturable technology. In the past years, we systematically studied the interface properties of ALD high-k dielectrics on GaAs, InGaAs with different In concentrations, InAs, InSb, InP, GaN and GaP using quasi-static CV, low-frequency high-frequency CV, conductance-method, charge pumping, and flatband shift vs. metal workfunction etc. approaches. The results show the Fermi-level in GaAs is not absolutely pinned at the mid-gap as Spicer model proposes. It can move almost across the whole bandgap with ~70% modulation efficiency. However, due to the wide bandgap of GaAs, existing interface traps and low density of states in GaAs, only weak inversion could be realized at ALD Al2O3/GaAs interface. This fact explains the observed inversion feature in quasi-static CV measurement at room temperature and in dark. It also explains why only low drain currents are obtained in inversion GaAs NMOSFETs and PMOSFETs using ALD Al2O3 as high-k dielectrics. Fermi-level in In-rich InGaAs is totally unpinned and strong inversion is realized as well as large drain current in inversion NMOSFETs. We also review detailed C-V and conductance-method measurements on high temperature annealed ALD Al2O3 dielectrics on GaAs and InGaAs and I-V characterization on fabricated enhancement-mode (E-mode) GaAs and InGaAs MOSFETs where the inversion channels are directly formed at the Al2O3/GaAs and Al2O3/InGaAs interfaces.

On the Inversion in Gaas Metal-Insulator-Semiconductor Heterostructures

Electric fields and valence band offsets at strained [111] heterojunctions

Contradictory increase of critical layer thickness in InxGa1−xSb/GaAs heterostructures grown by MBE

Metal-Insulator-Semiconductor Structures on P-Type Gaas with Low Interface State Density

Observation of Inversion Behaviors Induced by Polarization Effects in GaN∕AlxGa1−xN∕GaN Based Metal-Insulator-semiconductor Structures

High-performance Inversion-mode High-k/InGaAs MOSFETs and Their Interface Studies - Invited

Metal–insulator–semiconductor Structure on GaAs Using a Pseudomorphic Si/GaP Interlayer

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Heterovalent interlayers and interface states: an ab initio study of GaAs/Si/GaAs (110) and (100) heterostructures

Studies of Metal–ferroelectric–gan Structures

Band Structure Of Al/Si/N-Type Gaas With A Strained Si Interfacial Layer

Helical conducting edge states in narrow-gap semiconductors without band inversion

Magneto-Induced Topological Phase Transition in Inverted InAs/GaSb Bilayers

Si–SiO2 Interface Band‐gap Transition – Effects on MOS Inversion Layer

Engineering quantum spin Hall insulators by strained-layer heterostructures

GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach

Characteristics of Si3N4/GaAs Metal-Lnsulator-semiconductor Interfaces with Coherent Si/Al0.3Ga0.7As Interlayers

Ab Initio Calculation of Co2mnsi/Semiconductor (sc, = Gaas, Ge) Heterostructures

Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures