Abstract:A wet etching‐based approach is developed to thin bulk germanium wafers into soft germanium membranes, of which the thickness can be precisely controlled. The obtained germanium membrane is processable by standard semiconductor technology and can be directly used for the following device fabrication. As an example, flexible and stretchable germanium photodetectors, with mesh structure designs, are demonstrated. Inorganic semiconductor‐based nano/micro‐membranes are of great interest and can be used as active materials for high‐performance and flexible electronics, due to their unique and stable physical or chemical properties. However, the creation of high‐quality and single‐crystalline semiconducting membranes, particularly germanium (Ge) membranes, remains a significant challenge. In this study, a wet etching approach is developed to thin bulk Ge into soft Ge membranes, which are further used to fabricate flexible and stretchable photodetectors. The thickness of the obtained Ge membranes can be precisely controlled, with a minimum thickness of ≈1.6 μm. Investigations on the surface morphology, surface chemical composition, and Raman shifts indicate that the prepared Ge membranes are single‐crystalline and suitable for the following device fabrication. As an example, flexible and stretchable Ge photodetectors, of which the stretchability is realized by a meshed‐structure design, are demonstrated. Bending (with a minimum radius of 4 mm and a bending cycle of 10 000 times) and stretching (with a stretching strain of up to 10%) tests result in negligible variations in the device performance, revealing good flexibility, and stretchability, as well as the significant potentials of the prepared Ge membranes as candidates for flexible electronics.

On the Bending Characterization of Flexible Radio-Frequency Single-Crystalline Germanium Diodes on a Plastic Substrate

Investigation of Various Mechanical Bending Strains on Characteristics of Flexible Monocrystalline Silicon Nanomembrane Diodes on a Plastic Substrate

Experimental Characterization and Modeling of the Bending Strain Effect on Flexible Microwave Diodes and Switches on Plastic Substrate

Bending effects on lasing action of semiconductor nanowires.

Fabrication and Characterization of Flexible Microwave Single-Crystal Germanium Nanomembrane Diodes on a Plastic Substrate

Influence of Bending Strains on Radio Frequency Characteristics of Flexible Microwave Switches Using Single-Crystal Silicon Nanomembranes on Plastic Substrate

Lasing Characteristics of Curved Semiconductor Nanowires

Impact of Strain on Radio Frequency Characteristics of Flexible Microwave Single-Crystalline Silicon Nanomembrane P-Intrinsic-N Diodes on Plastic Substrates

Rf Characterization of Gigahertz Flexible Silicon Thin-Film Transistor on Plastic Substrates under Bending Conditions

RF model of flexible microwave single-crystalline silicon nanomembrane PIN diodes on plastic substrate

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Orientation-dependent Large Plasticity of Single-Crystalline Gallium Selenide

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Thinning the Bulk into the Soft: Flexible and Stretchable Germanium Photodetectors

Fabrication and Characterization of Flexible Ag/ZnO Schottky Diodes on Polyimide Substrates

Experimental and Theoretical Analysis of Integrated Circuit (ic) Chips on Flexible Substrates Subjected to Bending

Bending of PN junctions in flexoelectric semiconductors

Bending of a Flexoelectric Semiconductor Plate

Multi-Physical Models of Bending Characteristics on the Double-Clamped Beam Switch for Flexible Electronic Devices Application

Bending strain effects on the optical and optoelectric properties of GaN nanowires

Macroscopic flexotronics enhanced controllable piezotronic-like response by flexual semiconductor devices