Influence of Bending Strains on Radio Frequency Characteristics of Flexible Microwave Switches Using Single-Crystal Silicon Nanomembranes on Plastic Substrate

Guoxuan Qin,Tianhao Cai,Hao-Chih Yuan,Jung-Hun Seo,Jianguo Ma,Zhenqiang Ma
DOI: https://doi.org/10.1063/1.3651276
IF: 4
2014-01-01
Applied Physics Letters
Abstract:This Letter presents the realization and characterizations of the flexible radio-frequency (RF)/microwave switches on plastic substrates employing single-crystal germanium (Ge) nanomembranes. The fabricated flexible Ge single-pole, single-throw (SPST) switches display high frequency responses (e.g., insertion loss of <1.3 dB at up to 30 GHz and isolation >10 dB at up to ∼13 GHz). RF performance tradeoff exists for the flexible Ge switches and the major affecting parameters are determined. The flexible Ge SPST switch shows better RF property to that of the flexible Si SPST switch. Underlying mechanism is investigated by theoretical analysis and modeling of switches with different structures.
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