Abstract:Topological crystalline insulator (TCI) is a recently-discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular beam epitaxy to grow 12 double layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTiO3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8)2Te3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12DL Sn0.9Cr0.1Te film is ~ 110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12DL Sn0.9Cr0.1Te film is substantially lower than the predicted quantized value (~1/4 h/e2). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

Superconducting Thin Films Of (100) And (111) Oriented Indium Doped Topological Crystalline Insulator Snte

Chromium-Induced Ferromagnetism with Perpendicular Anisotropy in Topological Crystalline Insulator SnTe (111) Thin Films

Indium substitution effect on the topological crystalline insulator family (Pb$_{1-x}$Sn$_{x}$)$_{1-y}$In$_{y}$Te: Topological and superconducting properties

Superconductivity induced by In substitution into the topological crystalline insulator Pb(0.5)Sn(0.5)Te

Fully Gapped Superconductivity In In-Doped Topological Crystalline Insulator Pb0.5sn0.5te

Superconductivity by alloying the topological insulator SnBi2Te4

Topological Crystalline Insulators in the SnTe Material Class

Growth of Topological Crystalline Insulator SnTe Thin Films on Si(111) Substrate by Molecular Beam Epitaxy

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Experimental Evidence of the Thickness- and Electric-Field-dependent Topological Phase Transitions in Topological Crystalline Insulator SnTe(111) Thin Films

Realization of Epitaxial Thin Films of the Topological Crystalline Insulator Sr$_3$SnO

Full Superconducting Gap in the Doped Topological Crystalline Insulator, Sn_0.6In_0.4Te

Evidence of Indium impurity band in superconducting (Sn,In)Te thin films

Full superconducting gap in the doped topological crystalline insulator, Sn$_{0.6}$In$_{0.4}$Te

Electronic properties of SnTe-class topological crystalline insulator materials*

Proximity-induced superconductivity and quantum interference in topological crystalline insulator SnTe thin film devices

Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Pb(1-x)Sn(x)Te(111) Films.

Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films

Topological crystalline insulator Pb {sub x} Sn {sub 1-x} Te thin films on SrTiO {sub 3}(001) with tunable Fermi levels