Abstract:Topological superconductivity as an exotic quantum phenomenon with coupled nontrivial topological order and superconductivity together in a single substance has drawn extensive attention because of its novelty as well as the potential for quantum computation 1-6 . A direct idea for producing topological superconductors is to create superconductivity based on the well recognized topological insulators 7-14 . The topological insulating states in highly efficient thermoelectric materials Bi 2 Te 3 and Bi 2 Se 3 and their alloy B 2 Te 3-x Se x have been established from angle-resolved photoemission 15-17 and transport 18 experiments. Superconductivity was also observed based on these popular topological insulators by the application of pressure 19-21 , chemical dopant 22 , and heterostructures 23,24 . However, the experiments mainly focusing on Bi$_{2}$Se$_3$ doped by metals such as Cu 25-35 , Sr 36-39 , and Nb 40-46 have not provided the consistent evidence to support the topological superconductivity. Here we carry out a systematic high-pressure study on a topological insulator Bi 2 Te 2.7 Se 0.3 to provide the convincing evidence for the expected topological superconductivity. Four phases with different structures are found upon compression by the X-ray diffraction, Raman scattering, and electrical transport measurements. The Hall resistivity and electronic structure calculations help to identify the topological surface state in the entire initial phase, while superconductivity is found to coexist with such a state of the compressed material after its passing the electronic topological transition, followed by three other superconducting phases without topological character. For these superconducting phases, we observe that the upper critical field follows with the temperature in the critical exponent 2/3 for the first one with the topological surface state and 1 for the left. These observations support the realization of the topological superconductivity in the initial phase according to the theoretically proposed critical field measure. Therefore, this work points out a big pool and new direction for finding topological superconductors from topological thermoelectric materials. The results also demonstrate that the critical field measure is an easy and powerful method for the identification of topological superconductivity in the system where topological surface states and superconductivity coexist.

Fully Gapped Superconductivity In In-Doped Topological Crystalline Insulator Pb0.5sn0.5te

Full superconducting gap in the doped topological crystalline insulator, Sn$_{0.6}$In$_{0.4}$Te

Full Superconducting Gap in the Doped Topological Crystalline Insulator, Sn_0.6In_0.4Te

Non-Trivial Topological Phase in the Sn_{1-x}In_xTe Superconductor

Unusual Phonon Density of States and Response to the Superconducting Transition in the In-doped Topological Crystalline Insulator Pb0.5Sn0.5Te

Possible Topological Superconductivity in a Topological Crystalline Insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te

Multiple In-Gap States Induced by Topological Surface States in the Superconducting Topological Crystalline Insulator Heterostructure Sn_{1-x}Pb_{x}Te-Pb.

Multiple In-Gap States Induced by Topological Surface States in the Superconducting Topological Crystalline Insulator Heterostructure Sn 1 − x Pb x Te − Pb

Superconductivity of Topological Surface States and Strong Proximity Effect in Sn1- X Pbx Te-Pb Heterostructures.

Anisotropic Gapping of Topological Weyl Rings in the Charge-Density-wave Superconductor InxTaSe2

Anisotropic Superconductivity in the Topological Crystalline Metal Pb1/3TaS2 with Multiple Dirac Fermions

Point-contact tunneling spectroscopy between a Nb tip and an ideal topological insulator Sn-doped Bi 1.1 Sb 0.9 Te 2 S

Electron-phonon Coupling and Superconductivity in the Doped Topological Crystalline Insulator (Pb0.5sn0.5)1-X< /Sub>inxte

Superconductivity by alloying the topological insulator SnBi2Te4

Surface-State-Dominated Transport in Crystals of the Topological Crystalline Insulator In-Doped Pb1-X Snxte

Fully Gapped Topological Surface States in Bi2Se3 Films Induced by a D-Wave High-Temperature Superconductor

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Topological Crystalline Insulators in the SnTe Material Class

Multigap nodeless superconductivity in the topological semimetal PdTe

Topological Superconductivity in a Topological Insulator