Abstract:By growing a topological insulator on top of a high-temperature superconducting substrate it is possible to induce superconductivity in the surface states of the topological insulator. Moreover, the pairing symmetry of the induced superconductivity is s-wave, unlike the d-wave symmetry of the substrate. Topological insulators are a new class of material1,2, that exhibit robust gapless surface states protected by time-reversal symmetry3,4. The interplay of such symmetry-protected topological surface states and symmetry-broken states (for example, superconductivity) provides a platform for exploring new quantum phenomena and functionalities, such as one-dimensional chiral or helical gapless Majorana fermions5, and Majorana zero modes6 that may find application in fault-tolerant quantum computation7,8. Inducing superconductivity on the topological surface states is a prerequisite for their experimental realization1,2. Here, by growing high-quality topological insulator Bi2Se3 films on a d-wave superconductor Bi2Sr2CaCu2O8+δ using molecular beam epitaxy, we are able to induce high-temperature superconductivity on the surface states of Bi2Se3 films with a large pairing gap up to 15 meV. Interestingly, distinct from the d-wave pairing of Bi2Sr2CaCu2O8+δ, the proximity-induced gap on the surface states is nearly isotropic and consistent with predominant s-wave pairing as revealed by angle-resolved photoemission spectroscopy. Our work could provide a critical step towards the realization of the long sought Majorana zero modes.

Fully Gapped Superconductivity In In-Doped Topological Crystalline Insulator Pb0.5sn0.5te

Full Superconducting Gap in the Doped Topological Crystalline Insulator, Sn_0.6In_0.4Te

Full superconducting gap in the doped topological crystalline insulator, Sn$_{0.6}$In$_{0.4}$Te

Unusual Phonon Density of States and Response to the Superconducting Transition in the In-doped Topological Crystalline Insulator Pb0.5Sn0.5Te

Non-Trivial Topological Phase in the Sn_{1-x}In_xTe Superconductor

Possible Topological Superconductivity in a Topological Crystalline Insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te

Topological Crystalline Insulators in the SnTe Material Class

Anisotropic Superconductivity in the Topological Crystalline Metal Pb1/3TaS2 with Multiple Dirac Fermions

Surface-State-Dominated Transport in Crystals of the Topological Crystalline Insulator In-Doped Pb1-X Snxte

Superconductivity by alloying the topological insulator SnBi2Te4

Electron-phonon Coupling and Superconductivity in the Doped Topological Crystalline Insulator (Pb0.5sn0.5)1-X< /Sub>inxte

Anisotropic Gapping of Topological Weyl Rings in the Charge-Density-wave Superconductor InxTaSe2

Realization of a New Topological Crystalline Insulator and Lifshitz Transition in PbTe

Point-contact tunneling spectroscopy between a Nb tip and an ideal topological insulator Sn-doped Bi 1.1 Sb 0.9 Te 2 S

Multiple In-Gap States Induced by Topological Surface States in the Superconducting Topological Crystalline Insulator Heterostructure Sn 1 − x Pb x Te − Pb

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Fully Gapped Topological Surface States in Bi2Se3 Films Induced by a D-Wave High-Temperature Superconductor

Superconducting Thin Films Of (100) And (111) Oriented Indium Doped Topological Crystalline Insulator Snte

Superconductivity induced by In substitution into the topological crystalline insulator Pb(0.5)Sn(0.5)Te

Fully Gappeds-Wave-like Superconducting State and Electronic Structure in Ir0.95Pd0.05Te