Room Temperature Ferromagnetism in Mn-Doped Zno Films Mediated by Acceptor Defects

Qingyu Xu,Heidemarie Schmidt,Lars Hartmann,Holger Hochmuth,Michael Lorenz,Annette Setzer,Pablo Esquinazi,Christoph Meinecke,Marius Grundmann
DOI: https://doi.org/10.1063/1.2778470
IF: 4
2007-01-01
Applied Physics Letters
Abstract:Mn-doped ZnO films with preferred c-axis growth orientation were prepared by pulsed laser deposition under N-2 atmosphere on a-plane sapphire substrates. Large positive magnetoresistance amounting to 60% was observed at 5 K. Clear anomalous Hall effect was observed at 20 K. Ferromagnetism with Curie temperature higher than 290 K has been observed, and a deep acceptor trap due to Zn vacancies with a thermal activation energy amounting to 0.815 eV has been detected by deep-level transient spectroscopy. For comparison, only paramagnetism was observed in Mn-doped ZnO films with donor traps prepared under O-2 atmosphere. Their results clearly demonstrate that the ferromagnetism in Mn-doped ZnO originates from the parallel alignment of magnetic moments mediated by acceptor defects.
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