Abstract:Low-temperature growth of diamond films using the chemical vapor deposition (CVD) method is not so widely reported and its initial periods of nucleation and growth phenomenon are of particular interest to the researchers. Four sets of substrates were selected for growing diamond films using linear antenna microwave plasma-enhanced CVD (LA-MPCVD). Among them, silicon and sapphire substrates were pre-treated with detonation nanodiamond (DND) seeds before diamond growth, for enhancement of its nucleation. Carbon nanotube (CNT) films on Si substrates were also used as another template for LA-MPCVD diamond growth. To enhance diamond nucleation during CVD growth, some of the CNT films were again pre-treated by the electrophoretic deposition (EPD) of diamond nanoparticles. All these substrates were then put inside the LA-MPCVD chamber to grow diamond films under variable processing conditions. Microwave input powers (1100–2800 W), input power modes (pulse or continuous), antenna-to-stage distances (5–6.5 cm), process gas recipes (with or without CO2), methane gas percentages (3%–5%), and deposition times (11–120 min) were altered to investigate their effect on the growth of diamond film on the pre-treated substrates. The substrate temperatures were found to vary from as low as 170 °C to a maximum of 307 °C during the alteration of the different processing parameters. Contrary to the conventional MPCVD, it was observed that during the first hour of LA-MPCVD diamond growth, DND seeds and the nucleating structures do not coalesce together to make a continuous film. Deposition time was the most critical factor in fully covering the substrate surfaces with diamond film, since the substrate temperature could not become stable during the first hour of LA-MPCVD. CNTs were found to be oxidized rapidly under LA-MPCVD plasma conditions; therefore, a CO2-free process gas recipe was used to reduce CNT burning. Moreover, EPD-coated CNTs were found to be less oxidized by the LACVD plasma during diamond growth.

Role Of Nucleation In Nanodiamond Film Growth

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

The Structural Evolution Of Nanocrystalline Diamond Films Synthesized By R.F. Pecvd

Diamond Nucleation on Unscratched Silicon Substrates Coated with Various Non-Diamond Carbon Films by Microwave Plasma-Enhanced Chemical Vapor Deposition

Evidence of gas phase nucleation of nanodiamond in microwave plasma assisted chemical vapor deposition

Early Periods of Low-Temperature Linear Antenna CVD Nucleation and Growth Study of Nanocrystalline Diamond Films

Evidence of Gas Phase Nucleation of Nano Diamond in Microwave Plasma Assisted Chemical Vapor Deposition

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

The Microstructure Of Inclusions In Nanocrystalline Carbon-Films Deposited At Low-Temperature

Etching Kinetics of Nanodiamond Seeds in the Early Stages of CVD Diamond Growth

A Kinetic Model for the Initial Growth of Diamond Films

Ion beam nucleation of diamond

Fast, Efficient Tailoring Growth of Nanocrystalline Diamond Films by Fine-Tuning of Gas-Phase Composition Using Microwave Plasma Chemical Vapor Deposition

Nitrogen Adsorption Induced Surface Kinetics Changes of Diamond Growth by Microwave Plasma Cvd

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

Nano-crystalline Diamond Films Synthesized at Low Temperature and Low Pressure by Hot Filament Chemical Vapor Deposition

Effect of CN and CH radicals on diamond and carbon nanotubes growth in MECVD

Influence of Gas Reaction Source on the Preparation of Nano Diamond Films

Study of Field Electron Emission from Nanocrystalline Diamond Thin Films Grown from A N-2/Ch4 Microwave Plasma