Influence of Gas Reaction Source on the Preparation of Nano Diamond Films

WANG Bing,XIONG Ying,LI Ming,LI Kai
IF: 1.8
2010-01-01
Materials Science and Technology
Abstract:To clarify the influence of gas reaction source on the composition and structure of nano diamond films,two typical sorts of mixing gases,namely CH4 + Ar + H2 and CH4 + N2,were respectively used to prepare diamond films with microwave plasma chemical vapor deposition technology. Characterization by XRD and Raman spectroscopy shows that the as-prepared materials are all polycrystalline diamond films,while those grown with CH4 + N2 contain more non-diamond components. It is proved by AFM and SEM contrastive analyses that all obtained films have mean grain sizes and surface roughness within several tens of nanometers,but abnormally grown-up grains have emerged out in the films deposited with CH4 + N2,which is bad for the quality improvement of film surface. The study demonstrates that using CH4 + Ar + H2 as reactive gas source can prepare nano diamond films with higher phase purity and better surface morphology.
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