Abstract:An accurate physical model for GaN high-electron-mobility-transistors (HEMTs) device is imperative and crucial for circuit design and technology optimization. In this paper, a scalable large-signal surface-potential (SP) model of AlGaN/GaN HEMTs is presented. The drain current model is capable of accurately modeling the self-heating effect and trapping effect. The self-heating effect is modeled by embedding temperature increment into free-carrier mobility model, and the trapping effect is modeled by introducing an indirect variable effective gate voltage V-gseff. Moreover, the scaling and multiharmonic characteristics of the SP model are studied for the first time. The geometry-dependent thermal resistance R-ths is identified by the electrothermal finite-element method simulations, which is scalable with the gate width W and power dissipations P-diss of the device. Single-tone on-wafer load-pull measurements at operating frequency 8 GHz is carried out for verification purpose. Accurate predictions of the static (dc) I-V, pulsed-gate-and-drain I - V, S-parameters up to 40 GHz and large-signal harmonic performance (the fundamental, second-and third-harmonics output power, and power-added efficiency) for the devices with different gate peripheries have been achieved by the proposed model. The results of this paper can pave the way for the full application of the physical-based model in circuits design.

Emission and Detection of Surface Acoustic Waves by AlGaN/GaN High Electron Mobility Transistors

The Sensing Mechanism of InAlN/GaN HEMT

Investigation of High Sensitivity Radio-Frequency Readout Circuit Based on Algan/Gan High Electron Mobility Transistor

Detection of Halide Ions with AlGaN∕GaN High Electron Mobility Transistors

High sensitivity AlGaN/GaN lateral fieldeffect rectifier for zero-bias microwave detection

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

Electrical Detection of Ambipolar Acoustic Carrier Transport by Surface Acoustic Waves

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

A High-Performance Terahertz Detector Based on a Graded Channel GaN High-Electron-mobility Transistor with a Recessed Gate

Highly Sensitive Extended Gate-Algan/gan High Electron Mobility Transistor for Bioassay Applications

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Direct Current and Microwave Characteristics of Sub-Micron Algan/Gan High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode

Demonstration of AlGaN/GaN HEMTs on Vicinal Sapphire Substrates with Large Misoriented Angles

Electrically Driven Nanoscale Acoustic Source Based on A Two-Dimensional Electron Gas

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

A Terahertz Detector Based on Algan/Gan High Electron Mobility Transistor with Bowtie Antennas

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

Lateral AlGaN/GaN Diode with MIS-gated Hybrid Anode for High-Sensitivity Zero-Bias Microwave Detection

Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode

Algan/Gan Hemts with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization