Abstract:Journal of Circuits, Systems and Computers, Ahead of Print. The fabrication complexity and cost associated with nanoscale devices are major concerns. Therefore, to address these challenges, we have introduced a mole fraction-based approach for the sensitivity analysis of a dual material control gate cavity on a source electrically doped polarity-controlled tunnel field effect transistor (DMCG-CS-ED-PC-TFET)-based biosensor for label-free detection of biomolecule species. For this purpose, a polarity bias (electrically doped) of PG-[math][math]V and PG-[math][math]V is applied for the formation of n+ drain and p+ source regions, respectively, over the thin silicon body. The proposed device structure overcomes the random dopant fluctuation issues, thereby avoiding thermal budget and fabrication complexity as compared to the conventional TFET. Moreover, the nanogap cavity is created by etching the appropriate portion at the source side oxide layer. Furthermore, we have applied a dual metal work function (M1 and M2) at the gate electrode along with hetero material [math] at the source side region to improve the sensitivity of the device by varying the mole fraction value (X). The performance of the proposed device has been evaluated in terms of variations in carrier concentration profile, electric field variation, energy band diagram, transfer ([math]) characteristics and the sensitivity in terms of drain current (I[math]), ON-state current (I[math]) and switching ratio (I[math]/I[math]). Furthermore, the sensitivity of the proposed device biosensor has been investigated by considering nanocavity dimensions, practical challenges such as various fill factors, and various step profiles generated from steric hindrance. For this purpose, different neutral biomolecules such as Biotin ([math]), APTES ([math]), Keratin ([math]), Ferrocytochrome C ([math]) and Gelatin ([math]) have been considered in the etched nanocavity region. Additionally, charged biomolecules with positive (negative) charge densities at the oxide semiconductor interface below the nanocavity region have been incorporated to assess the performance of the proposed device using the Silvaco ATLAS device simulator. In this analysis, the proposed biosensor achieves a drain current sensitivity of [math] for neutral biomolecules ([math]), [math] for [math] = [math] cm[math] with [math] and [math] for [math] = [math] cm[math] and [math]. Finally, the performance of the proposed biosensor, DMCG-CS-ED-PC-TFET, exhibits higher sensitivity compared to various existing TFET-based biosensors. Hence, the proposed biosensor exhibits the potential candidate for the development of future sensing bio-equipment.

A Theoretical Approach to Study the Frequency Dependent Dielectric behavior of Breast Cancer Cells using AlN buffer-based AlGaN/GaN HEMT

AlGaN/GaN Heterostructures for Non-Invasive Cell Electrophysiological Measurements.

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Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach

High-K dielectric-modulated dual-cavity MOSHEMT with III–V nitride GaN/AlGaN semiconductors: application as biosensor

A Dielectric Modulated Step-Channel Junction-Less TFET (DM-SC-JLTFET) for Label-Free Detection of Breast Cancer Cells: Design and Sensitivity Analysis

Mole Fraction-Based Approach for Sensitivity Analysis of Dual Material Control Gate Polarity Controlled Tunnel Field Effect Transistor for Applications in Biomedical Engineering

Biomolecule identification using superlattice AlGaN/GaN high-K MOSHEMT: a cutting-edge biosensing technique

Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors

A Novel Liver Cancer POC Diagnostic Detection Technique by a Gate-engineered Source-extended TFET Device

Detection of HER-3 with an AlGaN/GaN-Based Ion-Sensitive Heterostructure Field Effect Transistor Biosensor

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

Modeling, simulation investigation of heterojunction (GaSb/Si) vertical TFET-based dielectric modulated biosensor structure

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

Design and analysis of high-sensitivity tunable graphene sensors for cancer detection

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate

The Sensing Mechanism of InAlN/GaN HEMT

Ph Sensor Based on an AlGaN/GaN HEMT Structure

Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications

Field Effect Transistor Nanosensor for Breast Cancer Diagnostics