Abstract:The microstructure of 2×12° [1 0 0]-tilt grain boundary Josephson junctions was investigated by atomic force and cross-sectional transmission electron microscopy. The junctions were prepared by depositing about 100 nm thick epitaxial YBa 2 Cu 3 O 7 films on the vicinal bicrystal substrates of SrTiO 3 with high pressure oxygen sputtering and showed a 2×12° tilt of the YBa 2 Cu 3 O 7 c -axis towards the grain boundary. The film grain boundary was very straight and followed the bicrystal substrate boundary. It showed a low degree of meandering in comparison to the behaviour of conventional [0 0 1]-tilt grain boundaries. Due to step bunching the film surface exhibited a profile of 12° inclined terraces with a valley depth of 5–20 nm and at the grain boundary a straight V-shaped surface suppression of about 40 nm depth was observed. The fact that the I c R n -products of such Josephson junctions showed high values of up to 1.2 mV at 77 K and up to 8 mV at 4.2 K as well as a smaller scattering of the values for I c and R n in comparison to [0 0 1]-tilt grain boundaries is attributed to the observed microstructure. The junctions showed clear Shapiro steps as a response to 94 GHz microwave radiation. Keywords Grain boundary Josephson junctions [1 0 0]-tilt grain boundary junctions YBa 2 Cu 3 O 7 thin films 1 Introduction Grain boundary Josephson junctions with high- T c thin films on bicrystals have often been used for fundamental and applied research. Mainly c -axis oriented YBa 2 Cu 3 O 7 thin films junctions with [0 0 1]-tilt boundaries have been investigated. Only a few reports on Josephson junctions with different types of grain boundaries have been studied [1–3] . Recently, we have reported [4] that especially [1 0 0]-tilt boundary junctions show improved electrical junction properties with high I c R n -products. Here we present the response of such junctions on microwave radiation and details concerning the grain boundary microstructure. 2 Experimental Grain boundary Josephson junctions were produced by depositing c -axis tilted YBa 2 Cu 3 O 7 films on vicinal “valley”-type 2×12° SrTiO 3 bicrystal substrates by high pressure oxygen dc-sputtering. The oxygen pressure was about 3.6 mbar, and the heater temperature was held at about 930 °C during the sputtering procedure. Films were patterned for IV -measurements by deep UV photolithography and nonaqueous etching with a 0.1% bromine solution in ethanol. The surface morphology of the film and the grain boundary were investigated with a Molecular Imaging Picoscan atomic force microscope (AFM) in the acoustic mode. Transmission electron microscopy (TEM) studies of the films were carried out with a JEOL 4000 EX microscope. 3 Results As can be seen from the TEM pictures in Fig. 1 the c -axis of the about 100 nm thick epitaxial YBa 2 Cu 3 O 7 thin film electrodes on each part of the bicrystal substrate showed a 12° tilt towards the boundary. The AFM study in Fig. 2 shows the surface morphology which was characterized by grains elongated along the YBa 2 Cu 3 O 7 a – b planes parallel to the boundary. The details of the surface morphology were depending on sputtering parameters like substrate temperature or oxygen pressure. For the conditions chosen here, the film surface exhibited a profile of 12° inclined terraces with a valley depth of 5–20 nm. At the grain boundary a straight V-shaped surface suppression of about 40 nm depth with an opening angle of ∼(180–2×12°) was observed. Both can be understood in terms of step flow film growth away from the boundary on the vicinal bicrystal substrates combined with step bunching. The grain dimension along the boundary seemed to be of the order of a few micrometers and therefore comparable to the junction width. The maximum meandering width of the grain boundary was of the order of 10 nm. The junctions showed RSJ-like IV -characteristics and the junction resistance R n did not significantly change with temperature. All of the 2–4 μm wide junctions were slightly hysteretic at a temperature of 4.2 K and nonhysteretic at 77 K. The critical current densities j c of the tilt junctions varied in the range 1.5–2.5×10 6 A/cm 2 at 4.2 K and 1.5–2.5×10 5 A/cm 2 at 77 K. Compared to the j c values of the junctions, the critical current densities of the electrodes perpendicular to the grain boundary were a factor of 8–10 higher while the current densities parallel to the boundary were 20–25 times larger. The I c R n -products of such Josephson junctions showed high values of up to 1.2 mV at 77 K and up to 8 mV at 4.2 K. The values for I c R n changed together with the microstructure of the film and the grain boundary when different sputtering parameters were used. Generally the values were much larger than the ones for junctions with conventional [0 0 1]-tilt boundaries. The spread in the I c R n products for junctions of comparable width on a chip was usually around 10% and did not so much depend on the sputtering conditions. In Fig. 3 an example for the electrical properties of a 2×12° [1 0 0]-tilt grain boundary Josephson junction produced with the same conditions as for the microstructural characterization shown in Figs. 1 and 2 is given. The I c R n products of junctions on this chip were about 0.65 mV at 77 K and 7 mV at 4.2 K. A clear response to microwave radiation of 94 GHz can be observed in the lower part of Fig. 3 . The power coupled to the junction was quite low in this experiment leading to a small suppression of the critical current and the appearance of only four Shapiro steps. 4 Discussion The relatively small scattering of the values for I c R n for junctions of comparable width on one chip might be explained by the fact that the [1 0 0]-tilt grain boundary is quite straight showing not much faceting in comparison to [0 0 1]-tilt boundaries which usually shows a significant meandering. Also due to the much longer grain dimension along the boundary in the case of the [1 0 0]-tilt junctions the spatial inhomogeneity and therefore the junction parameter spread should be smaller for junctions typically only a few micrometer wide. The groove at the grain boundary might be beneficial. Due to the larger thickness compared to the boundary region the junction electrodes can withstand larger currents. For the same reason also the local cooling of the weak link at high junction currents may be more effective. Concerning the higher I c R n product values of the [1 0 0]-tilt boundary junctions the different local atomic grain boundary structure with a different amount of localized states and other barrier properties might be responsible. Also due to symmetry reasons the order parameter at the grain boundary should be not so much suppressed in the case of [1 0 0]-tilt boundaries in comparison to conventional [0 0 1]-tilt boundaries [2,5] . In conclusion Josephson junctions produced on vicinal bicrystals of the 2×12° [1 0 0]-tilt type showed high I c R n -products and small spreads. The reasons might be attributed to the grain boundary microstructure which is very straight and homogeneous. Acknowledgements The authors gratefully acknowledge helpful discussions with M.I. Faley and V. Shirotov as well as technical assistance of W. Evers and R. Speen. References [1] D. Dimos P. Chaudhari J. Mannhart Phys. Rev. B 41 1990 4038 [2] F. Tafuri F. Miletto Granozio F. Carillo F. Lombardi U. Scotti Di Uccio K. Verbist O. Lebedev G. van Tendeloo Physica C 326 1999 63 [3] B. Goetz, Ph.D. thesis, University of Augsburg, Germany, 2000 [4] U. Poppe Y.Y. Divin M.I. Faley J.S. Wu C.L. Jia P.M. Shadrin K. Urban IEEE Trans. Appl. Supercond. 11 2001 3768 [5] J. Mannhart H. Hilgenkamp Supercond. Sci. Technol. 10 1997 880

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