Ion Implantation Effects on Tunneling Properties of Bi2sr2ca1cu2o8+Y Intrinsic Josephson Junctions

K Nakajima,J Watanabe,HB Wang,J Chen,T Yamashita

DOI: https://doi.org/10.1109/tasc.2003.814080

IF: 1.9489

2003-01-01

IEEE Transactions on Applied Superconductivity

Abstract:We propose a feasible method to modify the tunneling properties of Bi2Sr2CaCu2O8+y (Bi-2212) intrinsic Josephson junctions(IJJ's) using silicon ion implantation. The implantation is performed on 150 nm-height mesas at an acceleration voltage of 80 keV with doses ranging from 1 x 10(13) to 5 x 10(15) ions/cm(2). The critical current of IJJ's rapidly decreases with increasing doses, while the critical temperature hardly changes. The small amount of Si impurities affect on the interlayer coupling but not the gap of the CuO2 bilayers. The RF response of a Si-implanted IJJ is demonstrated and reveals clear Shapiro steps as the plasma frequency decreases.