Intrinsic Josephson Junctions In C-Axis-Oriented La1.85sr0.15cuo4 Thin Films

yoshinao mizugaki,yasushi uematsu,seong jun kim,jianhao chen,koji nakajima,tsutomu yamashita,hitoshi sato,michio naito
DOI: https://doi.org/10.1063/1.1595139
IF: 2.877
2003-01-01
Journal of Applied Physics
Abstract:We investigated current-voltage characteristics (IVCs) of intrinsic Josephson junctions (IJJs) for c-axis oriented La1.85Sr0.15CuO4 thin films. We fabricated IJJs with two kinds of structures. One was a mesa structure with a junction area of 22-194 mum(2) fabricated by using conventional photolithography and Ar-ion milling, and the other was a microbridge structure with a junction area of 1.1-3.6 mum(2) fabricated by using a focused-ion-beam technique. The mesa-type IJJs exhibited resistively-shunted-junction-like IVCs with no hysteresis. The temperature dependence of their critical current followed the Ambegaokar-Baratoff relation. IVCs of the microbridge-type IJJs, on the other hand, exhibited voltage jump and clear hysteresis. The different behaviors between the mesa-type and the microbridge-type IJJs were explained by the different numbers of grain boundaries involved in the IJJs. (C) 2003 American Institute of Physics.
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