Abstract:High transition temperature (high-T-c) superconducting quantum interference devices (SQUIDs) based on bicrystal grain boundary junctions have been utilized in a wide range of applications. To explore the effect of the bicrystal grain boundary angle on the property of the high-T-c SQUID, we fabricated and characterized YBa2Cu3O7-delta (YBCO) radio frequency (rf) SQUIDs using [001]-tilt grain boundary junctions on SrTiO3 (STO) bicrystal substrates with three different misorientation angles of theta = 18 degrees, 24 degrees, and 30 degrees. Unlike the device of theta = 18 degrees showing only the triangular waveform of the voltage-flux (V - Phi) characteristics, for device of theta = 24. and 30 degrees, the shape of the V - Phi curve can be tuned from approximately triangular into nearly rectangular by adjusting the working point of the device. It suggests that, as theta increases from 18 degrees to 30 degrees, the operation of the device may change from the hysteretic mode into the nonhysteretic mode. This is backed by electrical transport measurements of YBCO bicrystal junctions on separate STO substrates, which help to reveal that lying behind the indicated changeover of the SQUID operation mode is the exponential decrease of the junction critical current density J(c) as theta. increases. The white noise of the device, which decreases with increasing flux-to-voltage transfer coefficient partial derivative V/partial derivative Phi, shows a large drop as theta. increases to 24 degrees. For both 24 degrees and 30 degrees devices, the white field noise at 77 K is about 90 fT/Hz1/2 at respective optimum working points. For device of 30 degrees with nearly rectangular V - Phi characteristics showing the largest partial derivative V/partial derivative Phi among the fabricated samples, the white noise region extends below 10 Hz and a field noise of 145 fT/Hz1/2 at 1 Hz is shown, demonstrating the potential of obtaining high-performance bicrystal YBCO rf SQUIDs with this grain boundary angle.

Properties Of Yba2cu3o7 Thin Films Deposited On Substrates And Bicrystals With Vicinal Offcut And Realization Of High Icrn Junctions

Properties of YBa/sub 2/cu/sub 3/o/sub 7/ Thin Films Deposited on Substrates and Bicrystals with Vicinal Offcut and Realization of High I/sub C/r/sub N/ Junctions

Microscopic Structure of SrTiO3 Bicrystal Boundaries Studied with Scanning Tunneling and Atomic Force Microscopy

Variation of the Performance of YBa2Cu3O

Variation of the Performance of YBa2Cu3O7-δ Radio Frequency Superconducting Quantum Interference Device with Bicrystal Grain Boundary Angle

Ybacuo Bicrystal Junctions and Dc Superconducting Quantum Interference Devices

Microstructure of Epitaxial YBa2Cu3O7−δ Thin Films Grown on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Substrates

Properties of epitaxial YBa/sub 2/Cu/sub 3/O/sub y/ thin films on sapphire with PrBa/sub 2/Cu/sub 3/O/sub y/ buffer layers

In-Plane and Out-of-Plane Anisotropy in the Optical and Dielectric Properties of Yba2cu3o7-X Superconducting Film

Ferroelectricity and structure of BaTiO3 grown on YBa2Cu3O7-d thin films

Nondestructive Investigation of Microstructures and Defects at a SrTiO3 Bicrystal Boundary

Microstructure and Interfaces Investigations of Yba2cu3o7/Prba2cu3o7 Superlattices by Hrtem

The Growth Mechanism and Topography of Superconducting YBa2Cu3O7−δ and BiSrCaCuO-2201 Films Studied by Scanning Tunneling Microscopy

Superconducting properties and structural perfection of epitaxial YBa 2 Cu 3 O 7- x thin films

Superconducting Characteristics and Epitaxial-Growth Analyses of YBa2Cu3O7−x Thin Films by Direct-Current Magnetron Sputtering

Structural and electronic properties of epitaxial YBaCuO/LaCaMnO bilayers grown on SrTiO$_3$ (110) substrates

In-Plane Anisotropy of Electrical Transport in Y0.85Tb0.15Ba2Cu3O7−x Films

In-plane anisotropy of electrical transport in Y$_{0.85}$Tb$_{0.15}$Ba$_2$Cu$_3$O$_{7-x}$ films

Systematic Studies on the Growth Process of Superconducting YBa2Cu3O7−δ and Bi2Sr2CuOy Thin Films by Scanning Tunneling Microscopy

Fabrication of HTS ramp-edge-type Josephson junctions and SQUIDs using various YBCO-derivatives as barrier materials

Properties of Y1Ba2Cu3O7−δ and Ba1−XKXBiO3 Step-Edge Grain Boundary Junctions