Abstract:In this study, the growth of a high-quality AlGaN/GaN high electron mobility transistor (HEMT) heterostructure on silicon (Si) by metal-organic chemical vapor deposition (MOCVD) was investigated by utilizing the both AlN/GaN superlattice (SL) and Al0.07Ga0.93N back barrier (BB) techniques. Atomic force microscope (AFM) and high-resolution x-ray diffractometer (HR-XRD) confirm low surface roughness of 0.26 – 0.34 nm and the formation of high-quality AlN/GaN SL and GaN channel. The AlGaN/GaN heterostructures exhibit high electron mobility of up to 1700 cm2/V∙s and high carrier concentration density of (1.02 – 1.06 × 1013 cm-2) for both heterostructures. The AlGaN/GaN HEMT devices demonstrate low specific contact resistivity (c) of 2.7 × 10-6 Ω·cm2 and low contact resistance (RC) of 0.3 Ω·mm for the heterostructure with BB layer. Furthermore, the DC characteristics demonstrate that incorporating Al0.07Ga0.93N BB in the heterostructure results in a 19.2% increase in lateral breakdown voltage (with a 10 μm spacing) and a 27.5% increase in vertical breakdown voltage (at 1 mA/cm2), compared to the heterostructure without Al0.07Ga0.93N BB within the AlN/GaN SL structure. Moreover, improvement of 10.6% in maximum saturation current (IDS) and 15.2% in on-resistance (RON)has been for the device fabricated on Al0.07Ga0.93N BB structure. The insertion loss of the buffer layer improves to –1.40 dB/mm at 40 GHz. Consequently, the proposed heterostructure investigated in this study demonstrates suitability for electronic device applications.

Ultrathin Barrier Aln/Gan High Electron Mobility Transistors Grown At A Dramatically Reduced Growth Temperature By Pulsed Metal Organic Chemical Vapor Deposition

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Very High Channel Conductivity In Ultra-Thin Channel N-Polar Gan/(Aln, Inaln, Algan) High Electron Mobility Hetero-Junctions Grown By Metalorganic Chemical Vapor Deposition

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

High-performance InAlGaN/GaN Enhancement-Mode MOS-HEMTs Grown by Pulsed Metal Organic Chemical Vapor Deposition

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

Reduced temperature in lateral (Al x Ga1− x )2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

Static Characteristics of AlGaN/GaN High Electron Mobility Transistors with Different Thickness of AlGaN Layer

Engineering the (in, Al, Ga)N Back-Barrier to Achieve High Channel-Conductivity for Extremely Scaled Channel-Thicknesses in N-Polar Gan High-Electron-Mobility-Transistors

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance