Abstract:Tantalum silicate (Ta–Si–O) thin film materials have gained significant interest in hybrid renewable energy systems and thin-film resistors due to their exceptional thermal stability and adjustable electrical properties. In this study, we investigated the effects of target compositions and sputtering power densities on the material structures, chemical compositions, microstructures, and electrical properties of Ta–Si–O films. Two target compositions, Ta 65 (SiO 2 ) 35 and Ta 80 (SiO 2 ) 20 , were utilized in the deposition process. Notably, we observed substantial variations in the temperature coefficient of resistance (TCR) value and resistivity of Ta–Si–O thin films with different Ta concentrations. Most importantly, when the Ta content of the film is controlled at 62 ± 0.6 % by using this target, the resistivity of the Ta 0.62 Si 0.20 O 0.18 film can be as small as 2.31 ± 0.05 × 10 −4 Ω-cm and has an extremely small TCR of 22 ± 0.4 ppm/°C, which shows an excellent opportunity for the development of precision thin film resistors. A TCR value close to zero can be finely tuned by controlling the Ta concentration in the Ta–Si–O film. These intriguing electrical behaviors were found to be highly correlated with the predominant formation of metallic Ta 5 Si 3 as the main structural phase in the films. This work presents a simple and effective approach to produce Ta–Si–O thin films with near-zero TCR, making them highly suitable for applications under high-temperature conditions. Our findings contribute to the development of tailored thin film materials with desirable electrical properties for advanced electronic and energy devices.

Fabrication of Ta–Si–N/Ag nanocomposite thin films with near-zero temperature coefficient of resistance

Tuning the Electronic Properties in TaNx/Ag Nanocomposite Thin Films

Tantalum nitride/copper nanocomposite with zero temperature coefficient of resistance

Low resistivity and near-zero temperature drift ZrB2-Ag composite films prepared by DC magnetron co-sputtering

Tantalum Nitride Thin Film with a Nearly Zero Temperature Coefficient of Resistance Synthesized by Magnetron Co-Sputtering

Silicon nano-wires grown at low temperature

Fabrication of tantalum silicate films with low TCR and low resistivity by magnetron sputtering

Design, Fabrication and Characterization of Porous Ti-Rich Ti-Ni Alloy Based Composites with Near-Zero Thermal Expansion Behavior

Superior overall performance of zero thermal expansion ZrW2O8/Al–Si composite

Tunable Near-Zero Thermal Expansion in the C-doped La(Fe, Si)13 Compounds at Cryogenic Temperatures

609 Low-temperature Synthesis of Superhard Nanocomposite Thin Films

Experimental Research on CTEs of SiO2/PI Nanocomposites at Low Temperature

Near-Zero Thermal Expansion and High Thermal Conductivity from Ambient to Cryogenic Temperatures in Hf0.87ta0.13fe2cux

Highly Thermal-Stable Amorphous TaSi2Cx Thin Films

Preparation of Si 3 N 4 /V 2 O 5 Composite Films for Negative Temperature Coefficient Materials

Tuning Thermal Resistance of SiC Crystal/amorphous Layered Nanostructures Via Changing Layer Thickness

Temperature‐independent conductive ceramic for high‐temperature strain sensing applications

Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity

Microstructure, magnetic and magnetotransport properties of Co-C nanocomposite thin films

Amorphous/Nanocrystalline High-Entropy CoCrFeNiTix Thin Films with Low Thermal Coefficient of Resistivity Obtained via Magnetron Deposition

Design and Fabrication of Ultrathin and Highly Thermal-Stable Α-Ta/graded Ta(N)/TaN Multilayer As Diffusion Barrier for Cu Interconnects