Preparation of Si 3 N 4 /V 2 O 5 Composite Films for Negative Temperature Coefficient Materials

Xinxin Leng,Xueang Bai,Ruiqing Qiao
DOI: https://doi.org/10.1021/acs.cgd.4c00047
IF: 4.01
2024-03-22
Crystal Growth & Design
Abstract:The flexible electronics offer promising prospects in the field of wearable electronics, artificial intelligence, and the Internet of Things due to their characteristics of being thin, lightweight, flexible, bendable, and stretchable. The preparation and usage of semiconductor oxide temperature sensors require a specific high temperature or a defined temperature range. However, the utilization of polymer flexible substrates in flexible electronics is limited due to their inadequate resistance to high temperatures and mismatched thermal expansion coefficients with inorganic compounds. The substrate employed in this study was a silicon nitride single-crystal fiber paper that exhibited exceptional resistance to high temperatures, oxidation, and chemical reactivity. By subjecting the material to multiple cycles of scraping and percolating, followed by drying and sintering at elevated temperatures, a Si3N4/V2O5 composite film with an impressive bending radius as low as 1 mm was successfully fabricated. Notably, the resistivity of the film displayed a logarithmic relationship with reciprocal absolute temperature within a wide range up to 400 °C.
chemistry, multidisciplinary,materials science,crystallography
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