Abstract:It is relatively easy to obtain highly oriented/textured Ba(ZrxTi1–x)O3 (BZT) films by magnetron sputtering, but it is complicated to control the composition of these sputtered oriented films. Here, a series of BZT ceramic targets with different ingredients (x = 0.05, 0.1, 0.15, 0.2, 0.25, and 0.3) and a BaTiO3 (x = 0) target were fabricated by solid-state sintering. Then, the corresponding BZT thin films were deposited on LaNiO3 (LNO) buffered Pt/Ti/(001)Si substrates adopting radio-frequency magnetron sputtering. Benefit from the prefabricated (001)-LNO buffer layer and optimized BZT film preparation process, all BZT films exhibit highly (00l) preferred orientation. However, the degree of orientation, lattice parameter, dielectric properties, ferroelectric behaviors, and energy-storage characteristics are all highly dependent on the Zr content of BZT films sputtered by targets with the same composition. (00l)-oriented BZT films with relatively low Zr content have a better crystalline structure [narrower full width at half maximum (FWHM), larger grains]. It is also found that the rising of the Zr content in (00l)-oriented BZT films will result in a larger out-of-plane lattice parameter, and these results indicate that the doping amount of Zr will strongly change the heterointerface stress/strain states and the growth mode of the oriented films, and then effectively tailor their electric performances.

Low Temperature Growth of (100)-Oriented Ba(Zr0.2ti0.8)O-3-0.5(Ba0.7ca0.3)Tio3 Thin Films Using A Lanio3 Seed Layer

Interface Optimization and Electrical Properties of 0.5ba(zr0.2ti0.8)o3–0.5(ba0.7ca0.3)tio3 Thin Films Prepared by a Sol–Gel Process

Effect of Sputtering-Target Composition on the Structure, Dielectric, Ferroelectric, and Energy Storage Properties of Highly (00L)-Oriented Ba(ZrxTi1–x)O3 Films

Low-temperature Crystallization and Orientation Evolution of Nb-doped Pb(Zr,Ti)O3 Thin Films Using a Pb0.8Ca0.1La0.1Ti0.975O3 Seed Layer

Microstructures and Electrical Properties of 0.5(ba0.7ca0.3)tio3–0.5ba(zr0.2ti0.8)o3 Thin Films Prepared by a Sol–gel Route

Low Temperature Preparation and Electric Properties of Highly (100)-Oriented (na0.85k0.15)0.5bi0.5tio3 Thin Films Prepared by a Sol–gel Route

Thickness Scaling and Electric Properties of Highly (111) Oriented Nb-doped Pb(Zr,Ti)O 3 Thin Film Prepared at Low Temperature by a Sol–gel Route

LaNiO3 Seed Layer Induced Enhancement of Piezoelectric Properties in (100)-Oriented (1−x)bzt–xbct Thin Films

Crystallization, phase evolution and ferroelectric properties of sol-gel-synthesized Ba(Ti0.8Zr0.2)O3-x(Ba 0.7Ca0.3)TiO3 thin films

Microstructures and Electric Properties of Highly (111)-Oriented Nb-Doped Pb(Zr-0.2,Ti-0.8)O-3 Films with Pb0.8la0.1ca0.1ti0.975o3 Seed Layer

Dielectric and piezoelectric properties of the Ba0.92Ca 0.08Ti0.95Zr0.05O3 thin films grown on different substrate

A simple, low-temperature fabrication method of highly (100)-oriented (Na0.85K0.15)0.5Bi0.5TiO3 thin films with outstanding electric properties

A Very Low-Temperature Growth of Batio3 Thin Film by Hydrothermal Treatment Following Sol-Gel Coating at 200 Degree Celsius

Low Temperature Preparation and Electric Properties of Highly (100)-Oriented Pb0.8 La0.1Ca0.1Ti0.975O3 Thin Films Prepared by a Sol–gel Route

Influence of Seed Layer on Crystal Orientation and Electrical Properties of (na0.85k0.15)0.5bi0.5tio3 Thin Films Prepared by a Sol–gel Process

Low-Temperature Deposition of Pb ( Zr , Ti ) O 3 Thin Films on Si Substrates Using Ba ( Mg 1 = 3 Ta 2 = 3 ) O 3 as Buffer Layer

Microstructure and electric properties of BCZT thin films with seed layers

Preparation of Ba0.85 Ca0.15 Ti0.9 Zr0.1 O3 Thin Films by PLD and Its Property

Structural And Dielectric Properties Of Ba(Zrxti1-X)O-3 Thin Films Prepared By The Sol-Gel Process

Low-temperature Laser Processes for Synthesizing (100)-Textured Pb(Zr,Ti)O3 Thin Films on Si Substrate

Enhanced Performance of Pb0.8la0.1ca0.1ti0.975o3/Pb(Nb0.01zr0.2ti0.8)O-3 Multilayer Thin Films for Pyroelectric Applications